DMP10 Search Results

Contextual Info: DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management

e 102m 3kV

Contextual Info: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management

dmp1045

Contextual Info: DMP1045UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCE INFORMATION Product Summary V BR DSS RDS(on) max -12V 32mΩ@ VGS = -4.5V 45mΩ@ VGS = -2.5V 75mΩ@ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -5.5A -4.5A -3.2A Low On-Resistance

Contextual Info: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C

dmp1045u

Abstract: diode 3kv 1a DMP1045U-7
Contextual Info: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 102mΩ @ VGS = -4.5V -2.6A 116mΩ @ VGS = -2.5V -2.4A V(BR)DSS • • • • • • • -12V Description and Applications • • • Low Qg & Qgd Small Footprint Low Profile 0.62mm height

Contextual Info: DMP1012UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCED ADVANCE INFORMATION INFORMATION Product Summary Features V BR DSS RDS(ON) -8V 10mΩ @ VGS = -4.5V • • • • • • ID TA = +25°C -10 A Description This new generation MOSFET has been designed to minimize the

Contextual Info: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A -12V

Contextual Info: DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET N EW PRO D UC T Product Summary Features V BR DSS RDS(on) max -100V 240mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V • • • • • ID T C = 25°C -9A -8A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

WL-CSP1010H6-4

Contextual Info: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMP1022

Abstract: Diode markings 79a DMP1022UFDE
Contextual Info: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V

diode 79A

Contextual Info: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V

Contextual Info: DMP1055UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID MAX TA = +25°C -12V 59mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V -3.9A -3.3A -2.8A •       Low On-Resistance Low Input Capacitance

P400SK

Abstract: P400S
Contextual Info: DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(on) max -100V 240mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V • • • • • ID TC = 25°C -9A -8A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

P400SK

Contextual Info: DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(on) max -100V 240mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V •     ID TC = +25°C -9A -8A Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Contextual Info: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A -12V

WL-CSP1010H6-4

Contextual Info: DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 80mΩ @ VGS = -4.5V -3.3A 93mΩ @ VGS = -2.5V -3.0A V(BR)DSS • • • • • • • -12V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMP1012UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCED ADVANCE INFORMATION INFORMATION Product Summary Features V BR DSS RDS(ON) -8V 10mΩ @ VGS = -4.5V ID TA = +25°C -10 A Description • Low Qg & Qgd • • • • • Small Footprint 1.5-mm x 1.5-mm

Contextual Info: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance  Low Input Capacitance 31mΩ@ VGS = -4.5V 5.2A  Fast Switching Speed 4.3A  Low Input/Output Leakage  ESD Protected Up To 3kV Description

Contextual Info: DMP1022UFDF 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C • 0.6mm profile – ideal for low profile applications  PCB footprint of 4mm 15.3mΩ @ VGS = -4.5V -9.5A  Low Gate Threshold Voltage 19mΩ @ VGS = -2.5V

Contextual Info: Product specification DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A -12V Low On-Resistance Low Input Capacitance Fast Switching Speed

Contextual Info: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A V(BR)DSS • • • • •

Contextual Info: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMP1018UCB9

Abstract: DMP1018UCB9-7
Contextual Info: DMP1018UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary Features V BR DSS RDS(ON) -12V 18m @ VGS = -4.5V • ID TA = +25°C -7.6 A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)