DMN2300U Search Results

Contextual Info: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C

DFN1006H4-3

Abstract: DMN2300UFB4 DMN2300UFB4-7B dmn2300u
Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • • ID max TA = 25°C

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFD 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS RDS(on) Max 20V 200mΩ @ VGS = 4.5V 260mΩ @ VGS = 2.5V 400mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V • • • • • • ID max

Diode s2

Abstract: DMN2300UFL4
Contextual Info: A Product Line of Diodes Incorporated DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • • ID max TA = 25°C Max RDS(on) (Notes 6) 195mΩ @ VGS = 4.5V 2.11A 260mΩ @ VGS = 2.5V

Contextual Info: DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID max TA = +25°C • Footprint of Just 1.3 mm2 • Ultra Low Profile Package - 0.4mm Profile (Note 6) • On Resistance <200mΩ 195mΩ @ VGS = 4.5V 2.11A

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • • ID max TA = 25°C Max RDS(on) (Notes 6) 195mΩ @ VGS = 4.5V 2.11A 260mΩ @ VGS = 2.5V

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V • • • • • • • • ID TA = +25°C

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • ID max TA = 25°C (Notes 4)

Contextual Info: A Product Line of Diodes Incorporated DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFD 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) Max 20V 200mΩ @ VGS = 4.5V 260mΩ @ VGS = 2.5V 400mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V • • • • • • ID max

DFN1006-3

Abstract: DMN2300UFB DMN2300UFB-7 DMN2300UFB-7B
Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • • ID max TA = 25°C

Contextual Info: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V • • • • • • • • ID TA = +25°C

NX3008

Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMN63D8L

Contextual Info: DATE: 1st June, 2015 PCN #: 2156 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (CAT) as an Additional Assembly & Test Site for Discrete Products and Conversion to Copper Bond Wire on Select Discrete Products at

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)