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Dawin Electronics Co Ltd


Dawin Electronics Co Ltd DM2G100SH12AE High Power SPT+ and Lugged Type IGBT Module Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	DM2G100SH12AE		18			1 - 10 - 100 - 1000 - 10000 -	Get Quote

DM2G100SH12AE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DM2G100SH12AE Abstract: DM2G100SH12A Contextual Info: DM2G100SH12AE May. 2009 High Power SPT+ & Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives	Original	DM2G100SH12AE Moto250 DM2G100SH12AE DM2G100SH12A	PDF

Catalog Datasheet

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DM2G100SH12AE

Abstract: DM2G100SH12A
Contextual Info: DM2G100SH12AE May. 2009 High Power SPT+ & Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives

Original

DM2G100SH12AE Moto250 DM2G100SH12AE DM2G100SH12A

PDF