DL66 Search Results

Contextual Info: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. SSB-DL6613U W C/B B E.C.N. NUMBER AND REVISION COMMENTS DATE A E.C.N, # 1 0 9 8 8 . 5 .9 .0 3 B E.C.N. # 1 1 1 4 8 . 1.2 0 .0 5 J” 0.60 [0 .0 2 4 ] 2 PLS.5 1 7 .6 2 CO.30 0] 4,30 [0 ,1 6 9 ] 0 (2 P LS J ELECTRO-OPTICAL CHARACTERISTICS TA=25'C PER MODULE

DS12885

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS12885 Feb-97 9652 A2 HYUNDAI DL6644125AAD 1.2µ OX/NI 24 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

5903B

Abstract: FUSER
Contextual Info: UNCONTROLLED DOCUMENT REV, PART NUMBER REV. SSB-DL6613U W C/B B E.C.N. NUMBER AND REVISION COMMENTS DATE A E.C.N, # 1 0 9 8 8 . 5 .9 .0 3 B E.C.N. # 1 1 1 4 8 . 5 .1 1 .0 7 J” 0.60 [0 .0 2 4 ] 2 PLS.5 1 7 .6 2 CO.30 0] 4,30 [0 ,1 6 9 ] 0 (2 P LS J ELECTRO-OPTICAL CHARACTERISTICS TA=25'C PER MODULE

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S S B — DL6613UWC/B A REV. E.C.N. NUMBER AND A E.C.N. #1 0 9 8 8 . REVISION COMMENTS 5 .9 .0 3 j” 3 ,0 0 P 4,00 (2 l f = 20 mA LIMITS OF SAFE OPERATION AT 25 ’C PARAMETER TEST COND PARAMETER MAX PEAK FORWARD C U R R E N T *

DL66

Abstract: 1951 A 1952
Contextual Info: page 1 2 3 4 5 6 7 8 9 10 11 DL66 sheet 1 1 2 2 A B C D E F FP date 1951.04.04 1953.11.11 1951.04.04 1953.11.11 1952.10.10 1952.10.10 1952.10.10 1952.10.10 1952.10.10 1952.10.10 1999.08.22

LT 939

Contextual Info: tz JÜ n U lk rft“ IDL 66 SUBMINIATURE OUTPUT PENTODE for use in hearing aids PENTODE DE SORTIE SUBMINIATURE pour utilisation dans des appareils de sourds SUBMINIATUR ENDPENTODB zur Verwendung in Schwerhöri­ gengeräte Heating: Chauffage Hei zung: direct by D.C.;

m6845

Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics
Contextual Info: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate

dk52

Abstract: P-16890 17872 p1908 P1875 P-18701
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 MONITOR DATE JOB NO. Mar-96 Sep-96

NA2X

Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization
Contextual Info:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the

bb 9790 schematic diagram

Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
Contextual Info: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one

TTL 740 NAND propagation delay

Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor
Contextual Info: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities

P-20606

Abstract: c19643 DS1868 p19500 p1908 DD642 P19-50 B59728 P2050
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 PRODUCT DS1302 DS1302 DS1302 DS1868 DS21S07A DS21S07A DS21S07A DS2401 DS2401 DS2401 DS80C320 DS80C320 DS80C320 DS80C320 MONITOR DATE JOB NO. Mar-97 Jun-97 Sep-97 Feb-97 Feb-97

RT9611

Abstract: ms3406D M24308/2-12F M24308/4-11f MIL-C-39029 m24308/25 MS3474W scpb06 M39029/32-259 M83528
Contextual Info: CROSS REFERENCE/INDEX CROSS REFERENCE/INDEX MASTER CROSS REFERENCE/ INDEX  Indicates addtional alpha-numerics are required to complete part number 3040 North Clayton Street Phone: 702-851-7600 Email: space@spacecraft.com North Las Vegas, NV 89032 Fax: 702-851-7620

DL05L

Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
Contextual Info: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are

DS1868

Abstract: DL6-11 c19643 dallas date code ds12887 P1788 P-18182 dk52
Contextual Info: RELIABILITY MONITOR PRODUCT DS1302 DS1302 DS1302 DS1302 DS1868 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V.SUMMARY DS1

8085 mini projects

Abstract: full subtractor circuit using decoder and nand ga DF102 ic tda 2030 8085 mini projects with low budget AMI 9198 na44 DF422 16 BIT ALU design with verilog/vhdl code AMI 8232
Contextual Info:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the

DK53

Abstract: dk52 P-17422 P19500 P1908 P-17411 DN546229ATA DS1000M
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 PRODUCT MONITOR DATE DS1302 DS1302 DS1302 DS1868 DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 Mar-96 Sep-96

NA21 transistor

Abstract: kt 825 equivalent DF101 NA21 MGMC51 DL651 NA51 transistor power transistor na51 ami equivalent gates ami equivalent gates of each core cell
Contextual Info: “The new 0.8µm Standard Cell family from AMI delivers superior performance and flexibility . . . one of the lowest cost and highest performance 0.8µm standard cell ASIC products available today . . .” • Designed for 3V, 5V, or 3V/5V mixed supplies

tda 8210

Abstract: M82530 rtl 8112 MG82C54 32 BIT ALU design with verilog/vhdl code AMI 9198 NA72 na51 datasheet df402 DL002
Contextual Info:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6  9ROW Copyright  1998 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the

tda 8210

Abstract: rtl 8112 NA51 transistor datasheet 8085 microprocessor simulator NA52 transistor datasheet AMI MG82C54 NA51 transistor data sheet 8 BIT ALU design with verilog/vhdl code na2x tda 4020
Contextual Info:  0LFURQ &026 *DWH $UUD\ 'DWD %RRN $0,+*  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the

na2x

Abstract: DF211 AA44 na4x AMI350HXSC DL011 DL021 sce 08-40 ami-350 AA2X
Contextual Info: 0.35 Micron CMOS Core Library Standard Cell Datasheets AMI350HXSC 3.3 Volt Section 3 Revision 1.1 Core Selection Guide AMI350HXSC 0.35 micron CMOS Standard Cell CORE SELECTION GUIDE Simple Gates Description Page AA2x AA3x AA4x EN2x EO2x EO3x NA2x NA3x NA4x

schematic diagram online UPS

Abstract: na44 AMI 9198 NA51 MG82C54 32 BIT ALU design with verilog/vhdl code book national semiconductor AMI 8232 AMIS 690 DF411
Contextual Info:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the

rda 5807 sp

Abstract: rda 5807 rda 5807 sp fm receiver ic Elcom vhdl code M8490 IC TDA 2208 NA51 transistor datasheet nsm 3914 am 2901 verilog na44
Contextual Info:  0LFURQ &026 *DWH $UUD\ 'DWD %RRN $0,/*  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the