DL 711 Search Results

6195-0173

Abstract: 61890 8100-1429 8100-0498 6188-0494 8100-2566 8100-1428 6195-0030 61880 6189-0714
Contextual Info: DL SEALED SERIES Features The DL sealed connector series has a mechanism that detects when terminals are not inserted completely. This series consists of 040, 090, and 305 types 040, 090, and 187 types for the hybrid model classified according to terminal size,

7165-0118

Abstract: tt 4458 8100-2566 71650118 8100-0498 8100-1428 6188-0494 7165-0119 6195-0043
Contextual Info: DL SEALED SERIES Features The DL sealed connector series has a mechanism that detects when terminals are not inserted completely. This series consists of 040, 090, and 305 types 040, 090, and 187 types for the hybrid model classified according to terminal size,

6195-0021

Abstract: 8100-2567 6195-0003 6195-0173 6195-0060 8100-1429 71650 8100-1428 8100-0498 6189-0714
Contextual Info: O-01 DL SEALED SERIES Features 特長 The DL sealed connector series has a mechanism that detects when terminals are not inserted completely. This series consists of 040, 090, and 305 types 040, 090, and 187 types for the hybrid model classified according to terminal

L8253

Abstract: TAP 2411 L8251 L82301 L8252 L-82-65 L82-60
Contextual Info: Special Actives L-82-300 SERIES 10K ECL Multi Delay Line 16 15 14 13 Delay S p ec ifica tio n s in N a n o s ec o n d s ns < PIN #1 IN D E X DOT DL 1 DL 2 DL 3 L-82-301 511 5± 1 511 L -8 2 -3 02 5± 1 10 ± 1 1511 1 -8 2 -3 0 3 611 6± 1 611 L -8 2 -3 04

SN72810

Abstract: SN72710 SN52710 SN52810 N728 SN7271
Contextual Info: LINEAR INTEGRATED CIRCUITS CIRCUIT TYPES SN52810. SN72810 DIFFERENTIAL COMPARATORS CIRCUIT TYPES SN52810, SN72810 BULLETIN NO. DL-S 7111449, MARCH • Low Offset Characteristics schematic • High Differential Voltage Amplification • Fast Response Times

BUK436-200A

Abstract: BUK436-200B MN1 transistor
Contextual Info: PHILIPS INTERNATIONAL L5E D • 7110fl5b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK436-200B

Contextual Info: PHILIPS INTERNATIONAL L5E D • 7110fl5b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

2N5869

Contextual Info: TYPES 2N5869, 2N5870 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS TYPES 2N5869. 2N5870 BULLETIN NO. DL-S 7111622, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5867, 2N5868 87.5 Watts at 25°C Case Temperature

TIP538

Contextual Info: TYPES TIP538. TIP539, TIP540 N-P-N SILICON POWER TRANSISTORS TYPES TIP538, TIP539, TIP540 BULLETIN NO. DL-S 7111647, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 200 V, 300 V, 400 V Min V BR CEO 15-A Rated Continuous Collector Current

TIP535

Contextual Info: TYPES TIP535, TIP536, TIP537 N-P-N SILICON POWER TRANSISTORS TYPES TIP535, TIP536, TIP537 BULLETIN NO. DL-S 7111613, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • 200 V , 300 V, 400 V Min V BR CEO • 7.5-A Rated Continuous Collector Current

Contextual Info: SOLID-STATE POWER FUNCTIONS TYPES TIXH603. TIXH604 POSITIVE. NEGATIVE VOLTAGE REGULATORS Output Voltage Adjustable from 5 V to 30 V • Output Current up to 4 A • Input-to-Output Differential. . . 2 V to 35 V TYPES TIXH603, TIXH604 BULLETIN NO. DL-S 7111650, DECEMBER

Contextual Info: SOLID-STATE POWER FUNCTIONS 60 A, 400 V • Protected Against: TYPE TIXH806 BULLETIN NO. DL-S 7111660, DECEMBER • TYPE TIXH806 HYBRID SWITCH Short-Circuit Load Overheating • Operating Frequency . . . D C to 4 kHz 1971 mechanical data Î *10.060 1 0 • 0 860-

tic2260

Abstract: TIC226 TEXAS TIC226D
Contextual Info: TYPES TIC226B, TIC226D SILICON BIDIRECTIONAL TRIODE THYRISTORS TYPES TIC226B, T IC 22 6D BULLETIN NO. DL-S 7111468, APRIL 8 A RMS • 200 V and 400 V TRIACS for HIGH-TEMPERATURE, HIGH-CURRENT, and HIGH-VOLTAGE APPLICATIONS • Typ dv/dt of 500 V/fis at 25°C

TIP513

Contextual Info: TYPES TIP513, TIP514 P-N-P SILICON POWER TRANSISTORS TYPES TIP513, TIP514 BULLETIN NO. DL-S 7111615, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • 150 V Min V BR CEO • 5-A Rated Continuous Collector Current • 30 Watts at 100°C Case Temperature (TIP513)

texasinstruments

Contextual Info: SOLID-STATE POWER FUNCTIONS TYPE TIXH601 AUDIO POWER AMPLIFIER 100-Watt R M S Power Output into 8 Ohms • 25-Hz to 25-kHz Bandwidth at 80-W R M S Output • No External Feedback Components Required TYPE TIXH601 BULLETIN NO. DL-S 7111644, DECEMBER • description

SN75450

Abstract: TRANSISTOR 2X4 SN75308 SN75451 application lc 5012 m SN74154 SN7440 SN74H40 SN75451
Contextual Info: SYSTEMS INTERFACE CIRCUIT CIRCUIT TYPE SN75308 2 X 4 TRANSISTOR ARRAY CIRCUIT TYPE SN75308 BULLETIN NO. DL-S 7111439, FEBRUARY J OR N D UAL-IN -LIN E PACKAGE TOP VIEW • For High-Current Switching . . . to 600 mA Rated Collector Current • Low Storage Time . . . 13 ns Typical

TIP541

Contextual Info: TYPE TIP541 N-P-N SILICON POWER TRANSISTORS TYPE TIP541 BULLETIN NO. DL-S 7111600, DECEMBER RADIATION-TOLERANT TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS Min hpE of 10 at 4 V , 2 A after 5 X 1014 Fast Neutrons/cm2 4 W at 100°C Case Temperature

Contextual Info: SOLID-STATE POWER FUNCTIONS For High-Gain Complementary Push-Pull Stages • 50-A Continuous Collector Current • VcE sat < 2.5 V at lc = 50 A, I b = 0.25 A • 300 Watts at 25° C Case Temperature TYPE TIXH 703 BULLETIN NO. DL-S 7111656. DECEMBER • TYPE TIXH703

tidm15

Abstract: matrices TIDM268 MONOLITHIC DIODE matrices DM268 DM255 G-367 monolithic waveform generator
Contextual Info: S ERIES TIDM 1, T ID M 2 D IO D E M A T R IC E S SERIES T ID M 1 ,T ID M 2 BULLETIN NO. DL-S 7111434, JANUARY MONOLITHIC DIODE MATRICES For Application As • Programmable Read-Only Memories • Frequency Generators • Alphanumeric Character Generators •

2N5881

Abstract: 2n5882
Contextual Info: TYPES 2N5881, 2N5882 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS • 160 Watts at 2 5 °C Case Temperature • 15-A Rated Continuous Collector Current • Min f r of 4 MHz at 10 V , 1 A • 90-mJ Reverse Energy Rating TYPES 2N5881, 2N5882 BULLETIN NO. DL-S 7111625, DECEMBER

TIP503

Abstract: TIP506
Contextual Info: TYPES TIP503 THRU TIP506 N-P-N SILICON POWER TRANSISTORS TYPES TIP503 THRU T IP 506 BULLETIN NO. DL-S 7111598, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 120 V and 150 V Min V b r C E O 2-A Rated Continuous Collector Current 20 Watts at 100°C Case Temperature

TIP515

Contextual Info: TYPES TIP515 THRU TIP518 N-P-N SILICON POWER TRANSISTORS • 120 V and 150 V Min V BR CEO • 12-A Rated Continuous Collector Current • 80 Watts at 100°C Case Temperature • Min f j of 70 MHz at 5 V, 1 A TYPES TIP515 THRU TIP518 BULLETIN NO. DL-S 7111603, DECEMBER

TIP544

Contextual Info: TYPES TIP544, TIP545, TIP546 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS • 150 W at 25°C Case Temperature • 6-A Rated Continuous Collector Current • Min f j of 1 MHz at 20 V, 0.5 A TYPES T1P544, TIP545, T IP 5 4 6 BU LLETIN NO. DL-S 7111605, D EC EM B ER

2N5683

Abstract: 2N5684
Contextual Info: TYPES 2N5683, 2N5684 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS • TYPES 2N5683, 2N5684 BULLETIN NO. DL-S 7111590, DECEMBER FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING APPLICATIONS DESIG NED FOR C O M P LE M E N TA R Y USE W ITH 2N 5685, 2N 5686