DIODES BYW 08 200 Search Results

Contextual Info: BYW 08-50 → 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT AND AVALANCHE CAPABILITY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT

BYW 70

Contextual Info: SGS-THOMSON M e œ iL ie ïG M e s BYW 08-50 200 HIGH EFFIC IEN CY FAST R EC O VER Y R ECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY

Contextual Info: £ Z 7 S C S - T H O M S O N ^ 7# . [10MËILI §ra(B i0(SI BYW 08-50 -» 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE

Contextual Info: r z 7 S C S -T H O M S O N * 7 # M eB m iO T M O C S BYW 08-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES . LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY

BYV 200

Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Contextual Info: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220

BYV 200

Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
Contextual Info: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns

Contextual Info: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T

diodes byw 92

Abstract: BYW 200 ZTF 160 thomson diodes diode BYW 92 diode La AV8080 diode BYW 66
Contextual Info: STC D 1• 7 ^ 5 3 7 S G S—THOMSON 59C 0 2 2 1 6 D OüüEait. 7 T-*>2~U BYW 08-50-200, R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T SUPERSW ITCH

Diode LT 9250

Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Contextual Info: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY

77150

Abstract: diode BYW 31 200
Contextual Info: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E F F IC IE N C Y F A S T R E C O V E R Y R E C T IF IE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT

BYW 200

Abstract: diodes byw 92 byw 150 diodes byw 08 200 Thomson-CSF diodes de redressement Diodes de redressement diodes byw CB-34 1250A2s 92200
Contextual Info: h ig h e ffic ie n c y f a s t r e c o v e r y r e c t if ie r d io d e s y THOMSON-CSF diodes de redressement rapide à haut rendement Types •o Vrrm >FSM 10 ms A <V ) (A) Tj = 150° C 35A / Tease = 110°C N N N BYV 92-200 (R) BYV 92-300 (R) BYV 92-400 (R)

111EF

Abstract: BYW 200 diodes byw 78 100 T03A diode BYW 66 78150
Contextual Info: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A , (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 022 D T 'ô 3 ~ Z I HIGH EFFICIENCY V SUPERSWITCH

transistor S 8050

Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
Contextual Info: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY

Diode BYW 56

Abstract: 0224S diode BYW 19 2791T byw+36+v
Contextual Info: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH

aval

Contextual Info: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT

Contextual Info: r z T SGS-THOMSON ^ 7# B Y W 9 9 P -5 0 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY SM ALL CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . THE SPECIFICATIONS AND CURVES EN­ ABLE THE DETERMINATION OF t rr AND I r m

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Contextual Info: • 55E D N ANER P H IL IP S/ DI SC R ET E 1=^53=131 □Q5E73CI Q ■ BYW29 SERIES T - 0 3 -1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

6052B

Abstract: U6052B 6051B U6050B 6050B TELEFUNKEN EL 156 22-RELAY Diode BYW 56 diode BYW 64 U6052
Contextual Info: 44E » E3 flTSDOTti D0iafl30 3 E3ALG6 . .y 6 0 5 0 B • U 6051 B • TELEFUNKEN ELECTRONIC U 6052 B LOCAL MULTIPLEX SYSTEM $ ,q - j ' Technology: Bipolar Application: ' • Transmitter U 6050B and receiver (U 6 0 5 1 B, U 6 0 5 2 B) for permanent scanning of 8 switch-positions,

Contextual Info: I SGS-THOM SON G 7 . L6203 iy 0.3 ù DMOS FULL BRIDGE DRIVER P R E L IM IN A R Y D A T A • SUPPLY V O L T A G E UP TO 48V • 5A M A X PE AK C U R R E N T • T O T A L RMS C U R R E N T UP TO 4A • Rd s io n 0.3i2 T Y P IC A L V A L U E A T 25°C) •

relay HM 810

Abstract: U6050BAFL u6050b-AFL U6050B U6052BAFL U6052B-AFL diode BYW 64 hm 810 relay D-75031 DIODE S4 74
Contextual Info: Temic LO CAL U 6 0 5 0 B • U 6051 B U 6052B E le k t r o n lk - S e r v ic e m u l t ip l e x s y s t e m BodelschwinghStr. 32 D-75031 Eppingen Tel.'. 07262/91236-0 Fax: 07262/3213 T e ch n o lo g y: B ip ola r A p p lic a tio n : Transm itter U 6 0 5 0 B and receiver i.U 6051 B, U 6 0 5 2 B) for permanent scanning of 8 sw itch -p osition s,