DIODES 1N4001 - 1N4007 Search Results

Dioden

Abstract: 1N4007 diode 1N4007 EM518 EM513 1n4007 diode 1N4007 equivalent 1N4007/1N4007 1N4001 DO-204AL
Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2009-10-16 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07

EM513

Abstract: EM518
Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-21 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -4.5 Ø 2.6 Ø 0.77±0.07

em516

Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-30 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07

Contextual Info: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-17 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07

BAI59

Abstract: B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001
Contextual Info: FAGOR ^ NUMERICAL INDEX TRANSIENT VOLTAGE SUPPRESSOR DIODES RECTIFIER DIODES Plastic Case IN4007F. 1N4001F. IN4007 . 1N4001 . P513 . BY 133 . 1N5399 . 1N5391 . RF2007 . RF2001 . BY255 .

1N4007

Abstract: 1N4001-1N4007 PK 1N4004 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DO41 package 1N4003 1N4004 1N4005 1N4006
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N4001 – 1N4007 1A 1A GENERAL DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV I O@ T L V PK 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 50 100 200 400 600 800

1N4007 sma

Abstract: 1N5819 SMA 1N4007 SMB 1N5822 SMA 1N4004 SMA 1N4004 SMB 1n4000 sERIES DIODES ES2D B3 1N5822 SMB 1N5819 SMB
Contextual Info: § BRIDGE RECTIFIERS & DIODES General Purpose Diodes Series Voltage l(AV 50 200 100 300 400 500 600 1N4004 800 Outline 1000 1N4000 1 1N4001 1N4002 1N4003 1N4005 1N4006 1N4007 DO-41 1N5391 1.5 1N5391 1N5392 1N5393 1M5394 1N5395 1N5396 1N5397 1N5398 1N5399

1N4007 sma

Abstract: 1N4007 M7 m7 smd diodes m4 smd 1N4004 1N4002 smd type 1N4004 smd 1N4007 SMD 1N4002 SMD M2 MARKING 1N4007 DO-214AC 1N4007 SMD 1N4004 smd M7 diodes
Contextual Info: Diodes SMD Type 1A Rectifier Diodes 1N4001-1N4007 DO-214AC SMA Features Unit: mm 3.93 3.73 4.597 3.988 1.575 1.397 Diffused Junction 2.896 2.489 1 2 High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak 1.67 1.47 2.38 2.18

Contextual Info: Diodes DIP Type General Purpose Plastic Rectifier 1N4001 thru 1N4007 Features Low reverse leakage High forward surge capability Dimensions in inches and millimeters Maximum Ratings & Thermal Characteristics Ratings at 25 Parameter Peak Repetitive Reverse Voltage

Contextual Info: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES

1N4001

Abstract: diode 1n400 free 1N4007 1N400 diode 11N400 1N4002 1N4003 1N4004 1N4005 1N4007
Contextual Info: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

free 1N4007

Contextual Info: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

1N4001-G

Abstract: 1N4007-G 1N 4007 SMD 1N4001 SMD 1n4007 smd 4001 1n diode diode 4007 smd diode 1N4001 1N4002 1N4003
Contextual Info: COMCHIP General Purpose Silicon Rectifiers SMD Diodes Specialist 1N4001-G Thru. 1N4007-G Voltage: 50 to 1000 V Current: 1.0 A RoHS Device Features DO-41 -Low cost construction. -Fast forward voltage drop. -Low reverse leakage. -High forward surge current capability.

1N4001 SMB

Abstract: 1N4007 SMB 1N4000 1n4004 1n4002 RS3B/BB US13
Contextual Info: BRIDGE RECTIFIERS & DIODES General Purpose Diodes Series 1N4000 1N5391 1N5400 S1 S2 S3 PX6A h AV H •[. 1.5 1 1.5 S ’■\ 50 1N4001 1N5391 1N5400 S1A S2A S3A PX6A01 100 1N4002 1N5392 1N5401 S1B S2B S3S PX6A02 :i.i 200 1N4003 1N5393 1N5402 S1D S2D S3D PX6A03

1n 4007 diode

Abstract: diode 1N 4002 1N4000 silicon diodes 1N4000 silicon diode 4004 1N4001 1N4007 BY133 P513
Contextual Info: 1N4001 . 1N4007 BY133. P513 1 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1600 V. Current 1.0 A. at 75°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point,

ln4001

Abstract: 1N4001-1N4007 IN4003 diode 1N4001 specifications 1N4007 diodes 1N4007 1N4001 IN4003 forward voltage diode 1n4001 diode in4003
Contextual Info: DIODES LIMITED 1N4001-1N4007 SERIES FAIRACRES ESTATE. DEDW O RTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON RECTIFIERS With “LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES 1N4001 - 1N4007 ACTUAL SIZE OF DO-41 PACKAGE

1N4000

Abstract: 1N4000 silicon diodes P513 1N4000 - 1N4007 1n4000 a 1n4007 1N4001 1N4007 BY133
Contextual Info: 1N4001 . 1N4007 BY133. P513 1 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1600 V. Current 1.0 A. at 75°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point,

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES 1N4001 - 1N4007 ACTUAL SIZE OF DO-41 PACKAGE

1N4007 BL

Abstract: 1n4004 bl
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE Low cost SERIES 1N4001 - 1N4007

1N4000 silicon diodes

Abstract: 1N4000 - 1N4007 1n4000 1n4000 a 1n4007
Contextual Info: 1N4001 . 1N4007 BY133. P513 FA G O R^ 1Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.600 V. Ï ! to ; 1— il_ o\ Ç.35 58.5 Current 1.0 A. at 75°C. a t r0 .2 0.5 • Low cost • Diffused junction • High current capability

current rating of diodes 1N4001

Abstract: 1n4001 trr 1n4001 family 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
Contextual Info: Product Catalog > Diodes > Standard Recovery Rectifiers > Part Number 1N4001 product family STANDARD RECOVERY RECTIFIERS package type DO-41 VRM PRV 50V Ifsm 30A IF(AV) 1.0A @Vf 1.0V @If 1.0A Trr IR 5.0µA @VR 50V Package Qty Bulk: 1K/Box, 50K/Ctn ; Tape : 5K/Reel, 20K/Ctn; T/B: 5K/