DIODE ZX Search Results

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

A1 dual diode

Abstract: Schottky Diode 40V 5A dual MLP832 ZX3CD3S1M832 ZX3CD3S1M832TA ZX3CD3S1M832TC
Contextual Info: ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

A1 dual diode

Abstract: MLP832 ZX3CD2S1M832 ZX3CD2S1M832TA ZX3CD2S1M832TC
Contextual Info: ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

MLP832

Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC
Contextual Info: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

014 IR MOSFET Transistor

Abstract: MOSFET sot23-6 dual RCE SOT23-6 20 amp MOSFET transistor schottky diode MLP832 ZXTS1000E6
Contextual Info: Multichip Devices Dual Schottky Diode, Transistor & Schottky Diode Combinations Packaged in both the SOT23-6 and the innovative 3mm x 2mm MLP micro leaded package outline, this range of combination duals comprises ultra low saturation NPN or PNP transistors and a Schottky barrier diode (1 amp in the case of

12X3C

Contextual Info: A bohhoh ^HOA I2X3C Double diode 12X3C The 12X3C double diode is designed for highfrequency oscillation detection and conversion. CBepXBblCOKOH ^aCTO Tbl. The 12X3C double diodes are enclosed in glass j^B O H H bie AHOAbi 12X3C BbinycKaiOTCH b CTeKbulb and are provided with five rigid leads and

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

ZXGD3103

Abstract: 6K8 CONVERTER r1 3k3 ZXGD3103N8TC
Contextual Info: A Product Line of Diodes Incorporated ZXGD3103N8 SYNCHRONOUS MOSFET CONTROLLER Description The ZXGD3103 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The

PT7820-51-3W

Abstract: 513w IEC825 Gigabit Ethernet SFP Transceiver 1000base-zx receiver apd
Contextual Info: www.neophotonics.com VER 000 / 012908 PT7820-51-3W + GbE 1000Base-ZX 100 km SFP Transceiver 1 Features 1.1 Transceiver unit with independent 1550nm DFB laser diode transmitter APD photodiode receiver 1.2 Compliant with SFP MSA and SFF-8472 with duplex LC receptacle

transistor A2

Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
Contextual Info: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A

rain detector

Abstract: mosfet 4850 ZXGD3101T8TA
Contextual Info: A Product Line of Diodes Incorporated ZXGD3101T8 Synchronous rectifier controller for flyback converters. Description The ZXGD3101 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The

zxgd

Abstract: m 3101 c1 ZXGD3101T8 TS16949 ZXGD3101 rain detector circuit diagram CRITICAL CONDUCTION MODE flyback
Contextual Info: A Product Line of Diodes Incorporated ZXGD3101T8 Synchronous rectifier controller for flyback converters. Zero Point Detector Driver ‘ZPDD’ Description The ZXGD3101 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier

PT7620-51-3W

Abstract: PT7620-51 PT7620 PT7620-52-3W 80km 1000Base-ZX IEC825 pt7620-52
Contextual Info: www.neophotonics.com VER A / 012908 PT7620-51 2 -3W(+) GbE 1000Base-ZX 80km SFP Transceiver 1 Features 1.1 Transceiver unit with independent 1550nm DFB laser diode transmitter InGaAs PIN photodiode receiver 1.2 Compliant with SFP MSA and SFF-8472 with duplex LC receptacle

PT7620-51-2W

Abstract: PT7620-52-2W PT7620 PT7620-51 IEC825 inGaAs photodiode 1550 array PT7620-512 512W
Contextual Info: www.neophotonics.com VER B / 040208 PT7620-51 2 -2W(+) GbE 1000Base-ZX 60 km SFP Transceiver 1 1.1 Features Transceiver unit with independent 1550nm DFB Laser diode transmitter InGaAs PIN photodiode receiver 1.2 Meet SFP MSA and SFF-8472 with duplex LC receptacle

Z5W27V

Contextual Info: Z5W27V SEMICONDUCTOR ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE TECHNICAL DATA BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE

Contextual Info: SEMICONDUCTOR Z5W27V TECHNICAL DATA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE

Z5W27V

Contextual Info: SEMICONDUCTOR Z5W27V TECHNICAL DATA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE

Z4W27V

Abstract: DO-218 irsm4
Contextual Info: SEMICONDUCTOR Z4W27V TECHNICAL DATA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE

Contextual Info: Part Number: ZDG10X146S www.SunLED.com Features ● 5.0mm X 5.0mm X 1.2mm SMD LED ● Zener diode provided for ESD protection ● IR-reflow compatible 5.0mm x 5.0mm SURFACE MOUNT LED LAMP ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: Part Number: ZMDH146S www.SunLED.com Features ● 5.0mm X 5.0mm X 1.2mm SMD LED ● Zener diode provided for ESD protection ● IR-reflow compatible 5.0mm x 5.0mm SURFACE MOUNT LED LAMP ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE

Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APTL3216-DP22 Hyper Red Features Description z3.2mmx1.6mm SMT LED, 1.1mm thickness. The Hyper Red source color devices are made with InGaAlP zLow power consumption. on GaAs substrate Light Emitting Diode.

5D marking DIODE BAS16

Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
Contextual Info: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid

MCH6448

Abstract: N-Channel mosfet sot-363
Contextual Info: MCH6448 Ordering number : ENA2004 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6448 Low-Voltage Driver Switching Device Applications Features • • • • ON-resistance RDS on 1=17mΩ (typ.) 1.2V drive Halogen free compliance Protection diode in