DIODE YS 040 Search Results

b649

Abstract: SKM214
Contextual Info: s e MIKRO n Absolute Maximum Ratings Symbol Conditions ' V ds V dgr R gs = 20 ki2 Id Idm V gs Pd Tj, Tstg Visol humidity climate AC, 1 min, 200 iA DIN 40 040 DIN IEC 68T.1 Values Units 100 100 125 375 ±20 400 - 5 5 . . .+150 2 500 Class F 55/150/56 V V SEMITRANS M

T1A 250v

Abstract: his-8a Jamicon capacitor bel t1a 250v m7a90 0711-PN UTWHS ee-25 tuv philips zener diode ltec capacitor
Contextual Info: SA06L48-V Specification MODEL NO.: CUSTOMER P/N: DESCRIPTION: ISSUED DATE: REVISION NO.: Page 1 of 1 SA06L48-V SWITCHING ADAPTER September 5, 2002 01 TABLE OF CONTENTS 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 INPUT REQUIREMENTS OUTPUT REQUIREMENTS EFFICIENCY PROTECTION REQUIREMENTS

Wf VQE 23 F

Abstract: WF VQE 23 D Wf VQE 23 E wf vqe 24 d WF vqe 24 e WF VQE 22 c WF VQE 22 d wf vqe 14 e wf vqe 24 f wf vqe 23
Contextual Info: 5EMIKR0N Absolute Maximum Ratings Symbol VcES VcGH lc ICM Vges P.o< Ti, Tag Visol humidity climate Values Conditions ' Rge = 20 k ii Tease = 25/80 "0 Tease ~ 25/80 C . tp — 1 ms per IGBT, Tease = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode

Contextual Info: SIMOPAC MOSFET Module VDS lD ^ D S o n • • • • • • • BSM 244 F = 400 V = 2 x 45 A = 0.1 Q Power module Half-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 2 a ’ ) Type Ordering code

Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS l0 ^ D S o n BUZ 230 = 1000 V = 5.5 A = 2.0 Q • N channel • FREDFET • Enhancem ent mode • Package: T O -204A A (T O -3 )1) Type Ordering code BUZ 230 C 6 7 0 7 8 -A 1 105-A2 Maximum Ratings Parameter Symbol

edi r diode

Abstract: diode Standard Recovery diode YS 040
Contextual Info: NVD NVDX ARRAYS NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS These diodes and arrays have been specifically designed for use in night vision and image intensifier equipment power supplies. They offer unusual characteristics that have not been previously available. As a result of a proprietary EDI diffusion process, they feature small size

shindengen solenoid

Abstract: shindengen rectifier transistor power MOSFET
Contextual Info: Sales Branches and Distributors U.S.A. Shindengen America, Inc. Head Office 2985 E, Hillcrest Drive, Suite 140, W estlake Village, CA91362 U.S.A. Phone: 1 -805-373-1130 FAX: (1 )-805-373-3710 Chicago Office 411 Business C enter Drive, Suite 112, Mt. Prospect, IL 60056 U.S.A.

RF-310T-11400

Abstract: cdm 12.1 laser l1210 RF-300CH CDM 12.3blc Philips cd loader L1210 rf310t11400 CDM 12.6 Philips RF-500TB-12560 tda1371
Contextual Info: C ON T E N T S 1 INTRODUCTION _ 1.1 2 C D S YS T E M S O L U T I O N S CD-ROM block-decoders _ 3.19 CD encoder _ 3.21 CD-Recordable _ 3.22 DACs, ADCs and ADDAs _ 3.27

ss295

Contextual Info: SIEMENS BSS 295 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 295 ^DS 50 V Type BSS 295 BSS 295 BSS 295 Ordering Code Q62702-S603 Q67000-S238 Q67000-S105 1.4 A flbs(on)

Contextual Info: Advanced Data High Voltage IGBT with Diode IXDH 20N120AU1 VCES = 1200 V iC25 = 30 A V CE sat typ = 2 5 VV SCSOA Capability Symbol Test Conditions V CES T j = 25°C to 150°C 1200 V Vco„ Tj = 25°C to 150°C; RaE = 1 MQ 1200 V v SES VGEM Continuous ±20

VDS-500V

Contextual Info: Ti TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR íFl^G ^T aSD 00lt,743 S | 99D 16743 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 9 4 TECHNICAL' d a t a SILICON N CHANNEL MOS TYPE ff-MOSl) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

BSS124

Contextual Info: SIEMENS BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 -2.5 V Pin 1 Pin 2 G Type BSS 124 Vos 400 V % 0.12 A Type BSS 124 Ordering Code Q67000-S172 %S(on) 28 0 Pin 3 D Package Marking TO-92 SS 124 S Tape and Reel Information

MARKING SSG SOT23

Abstract: transistor marking 7002 TRANSISTOR 7002 marking code sSG SOT23
Contextual Info: SIEMENS SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0-8.2.0V Pin 1 Pin 2 Pin 3 ~G Type VDS b f lDS(on) Package Marking SN 7002 60 V 0.19 A 5Ü SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063

Contextual Info: SIEMENS BUZ103AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ103AL Vbs 50 V to 35 A ^bs<on

Contextual Info: SIEMENS SIPMOS Power Transistor N channel Enhancem ent mode Avalanche-rated Type BUZ 344 fl • • • ¡D 100 V n 50 A ^ DS (on 0.035 SI Maxim um Ratings Param eter Continuous drain current, Tc = 25 "C Pulsed drain current, Tc = 25 ’C Avalanche current, lim ited by 7] max

diode sy 710

Abstract: sy 710 diode transistor buz 90 transistor buz 350 buz90
Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vbs 600 V b 4.5 A ^DS on Package Ordering Code 1 .6 « TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

Contextual Info: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode ' • FR ED FET fé YW5S 3 Pin 1 Pin 2 Type BUZ 380 Vfes 1000 V b flbsfon 2w 5.5 A Pin 3 D G S Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage

transistor Siemens 14 S S 92

Abstract: transistor 115 47e
Contextual Info: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code

MPB-1036-B11

Abstract: MBP1030B11 MBP-1035-B11 MPB-1035-B11 MBP-2034-B11 MBP2034-B11
Contextual Info: MESA BEAM LEAD PIN DIODES La I1IBZ metelicS " CORPORATION FEATURES • Low C apacitance • Low Resistance • Fast Switching • Rugged Construction

Contextual Info: A dvanced P o w er Te c h n o l o g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT60D20B 200V 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

Contextual Info: SIEMENS BUZ 61 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 61 A Vbs 400 V <d 11 A ^bs on 0.5 Í2 Package Ordering Code TO-220 AB C67078-S1341-A3 Maximum Ratings Parameter Symbol Continuous drain current b Values

Contextual Info: S I E M SIMOPAC E N S MOSFET Module BSM 121 AR C VDS = 200 V /q =130 a ^DS(on) = 20 ItlO • • • • • • Power m odule Single switch N channel Enhancem ent mode Package with insulated metal base plate C ircuit diagram : Fig . 1 a 1) Type Ordering code

Contextual Info: Advanced Data Low VCE sat| IGBT with Diode IXSA 12N60AU1 VCES I v C25 CE(sat 600 V 12 A 2.5 V Short Circuit SO A Capability Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 Maximum Ratings vt c g r T, = 25°C to 150°C; RQE = 1 MS2 600 V v Continuous

Contextual Info: Ç IEM FM S SIMOPAC MOSFET Module BSM 691 F Vds = 1000 V = 6 x 4.8 A ^DS on = 2.5 ß lD • • • • • • • Power module 3-phase full-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 3 a 1)