DIODE V6 22 Search Results

MA4E2054E-1068T

Abstract: LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T MA4E2054 equivalent of v6 surface mount diode DIODE 1581
Contextual Info: Also Offering RoHS Compliant Equivalent Parts MA4E2054 Series V6 Surface Mount Low Barrier Schottky Diode Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS

Contextual Info: MA46410 thru MA46485 Series GaAs Hyperabrupt Varactor Diode Gamma = 1.0, 1.25, & 1.50 Features Rev. V6 Common Case styles Constant Gamma = 1.0, 1.25 or 1.5 High Q up to 4000 at -4 Volts More Linear Frequency Tuning High and Nearly Constant Modulation Sensitivity

MASW-001100-1190

Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G
Contextual Info: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation than pHempt

Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs

MASW-001100-1190

Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
Contextual Info: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches RoHs Compliant Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

MA4GP907

Abstract: 10ghz pin diode
Contextual Info: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL

MASW-000553-13220G

Abstract: macom rf switch MASW-000553 macom pin diode application
Contextual Info: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 0.8 dB Insertion Loss, ♦ 31 dB Isolation at 50 GHz ♦ Low Current consumption. • -10mA for low loss state

Contextual Info: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch V6 FEATURES •     Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption

MA4AGSW3

Abstract: 10GHZ M541
Contextual Info: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES • Ultra Broad Bandwidth: 50 MHz to 50 GHz  Functional Bandwidth : 50 MHz to 70 GHz  0.8 dB Insertion Loss,  31 dB Isolation at 50 GHz  Low Current consumption.  -10mA for low loss state

Contextual Info: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance

Contextual Info: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance

M513

Abstract: MASW-000822-12770T S2803
Contextual Info: MASW-000822-1277OT HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features • Exceptional Broadband Performance • Suitable for Higher Power WiMax & WLAN Applications • Lower Loss: Tx = 0.40 dB @ 3.8 GHz, 22mA Rx = 0.60 dB @ 3.8 GHz, 22mA

LTC2990

Abstract: 2991 0x09-0x1B LTC2991IMS-PBF CET3904
Contextual Info: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor FEATURES DESCRIPTION n The LTC 2991 is used to monitor system temperatures, voltages and currents. Through the I2C serial interface, the eight monitors can individually measure supply voltages and can be paired for differential measurements of current sense resistors or temperature sensing transistors.

Contextual Info: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor FEATURES n n n n n n n n n n n n DESCRIPTION Measures Voltage, Current, Temperature Measures Four Remote Diode Temperatures 0.7°C Typ Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor

Contextual Info: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor Features n n n n n n n n n n n n Description Measures Voltage, Current, Temperature Measures Four Remote Diode Temperatures 0.7°C Typ Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor

Contextual Info: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor Features n n n n n n n n n n n n Description Measures Voltage, Current, Temperature Measures Four Remote Diode Temperatures 0.7°C Typ Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor

Contextual Info: All MikroElektronika´s development systems represent irreplaceable tools for programming and developing microcontroller-based devices. Carefully chosen components and the use of machines of the last generation for mounting and testing thereof are the best guarantee of high reliability of our devices. Due to

MASW-000834-13560T

Abstract: MADR-008851-000100 MASW-000834 0603CS-27NXJLW S2083 madr-008851
Contextual Info: MASW-000834-13560T HMICTM PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features Functional Diagram TOP VIEW • Exceptional Broadband Performance, 0.05 - 6.0 GHz  Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA  Low Loss: TX = 0.38 dB @ 3.5 GHz, 5V / 20mA

diode marking v6

Contextual Info: Data Sheet BUY25CS54A-01 HiRel RadHard Power-MOS •      Low RDS on 1 Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm VGS = -10V, VDS = 250V VGS = -15V, VDS = 250V VGS = -15V, VDS = 120V VGS = -20V, VDS = 160V

Contextual Info: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch FEATURES ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption. • -10mA /1.35V for low loss state

Contextual Info: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch FEATURES ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption. • -10mA /1.35V for low loss state

AFFICHEUR LCD 16

Abstract: multiplexeur
Contextual Info: Les systèmes de développement MikroElektronika sont des outils irremplaçables pour le développement et la programmation des microcontrôleurs. Un choix attentif des composants ainsi que l’utilisation d’appareils de dernière génération pour le montage et le test constitue la meilleure garantie de fiabilité

MA4GP907

Contextual Info: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation