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    DIODE V Search Results

    DIODE V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ16V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Datasheet
    SF Impression Pixel

    DIODE V Price and Stock

    Hirschmann Electronics GmbH & Co Kg

    Hirschmann Electronics GmbH & Co Kg GDM 3011 J 6-48V RHP w/ DIODE

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GDM 3011 J 6-48V RHP w/ DIODE 40
    • 1 $22.96
    • 10 $19.51
    • 100 $16.62
    • 1000 $15.77
    • 10000 $15.77
    Buy Now

    Hirschmann Electronics GmbH & Co Kg RAIL DATA DIODE LV

    Networking Modules Data Diode for 24 V operating voltage
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RAIL DATA DIODE LV
    • 1 $8294.67
    • 10 $8294.67
    • 100 $8294.67
    • 1000 $8294.67
    • 10000 $8294.67
    Get Quote

    DIODE V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for


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    FFPF60B150DS O-220F FFPF60B150DSTU O-220F PDF

    650nm 5mw laser module

    Abstract: LIGHT LASER DIODE SAMSUNG laser diode laser diode samsung samsung laser diode MM650-5 SAMSUNG MONITOR laser diode symbols SM650-5 EPSM650-5
    Contextual Info: US-Lasers: 650nm-5mW Samsung Visible Laser Diode Specifications Page 1 of 1 US-Lasers: 650nm-5mW Samsung Visible Laser Diode Specifications Links to Laser Diode & Variable Output Laser Diodes Laser Diode Module Micro Laser Module Laser Module Laser Diode Module


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    650nm-5mW SD650-5 SM650-5 MM650-5 EPSM650-5 SM650nm com/sd650nm5 650nm 5mw laser module LIGHT LASER DIODE SAMSUNG laser diode laser diode samsung samsung laser diode MM650-5 SAMSUNG MONITOR laser diode symbols SM650-5 EPSM650-5 PDF

    Contextual Info: US-Lasers: 660nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 660nm-5mW - Red Laser Diode Back to Laser Diodes RED LASER DIODE DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Visible laser diode light 660nm output


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    660nm-5mW 660nm com/d660nm5m PDF

    Contextual Info: US-Lasers: 650nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 650nm-5mW - Red Laser Diode Back to Laser Diodes RED LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Visible laser diode light 650nm output


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    650nm-5mW 650nm com/d650nm5m PDF

    c18v

    Abstract: C10V C25V SVC333 AM receiver 4084
    Contextual Info: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode


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    EN935B SVC333 SVC333 SVC333] c18v C10V C25V AM receiver 4084 PDF

    C10V

    Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
    Contextual Info: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode


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    EN935B SVC333 SVC333 SVC333] C10V C25V IN 4004 diode diode IN 4004 3662 diode PDF

    semikron skiip 342

    Abstract: igbt bridge switching power supply IGBT PROTECTION DIODE
    Contextual Info: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM Diode, T j = 150 °C, 10ms; sin


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    PDF

    semikron skiip 232

    Abstract: OF IGBT
    Contextual Info: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM Diode, T j = 150 °C, 10ms; sin


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    PDF

    BAS70L

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring


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    M3D891 BAS70L OD882 MDB391 SCA75 613514/01/pp8 BAS70L PDF

    BAV70-GS18

    Abstract: BAL99 BAV70 BAV70-GS08 BAV99 BAW56
    Contextual Info: BAV70 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with


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    BAV70 BAV99, BAW56, BAL99. OT-23 BAV70-GS18 BAV70-GS08 D-74025 09-Jul-04 BAL99 BAV70 BAV70-GS08 BAV99 BAW56 PDF

    Contextual Info: BAW56-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type


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    BAW56-V BAL99, BAV99, BAV70 AEC-Q101 OT-23 GS18/10K 10K/box GS08/3K 15K/box PDF

    BAS40L

    Abstract: marking code s6 SOD-882L
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring


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    M3D891 BAS40L OD882 MDB391 SCA75 613514/01/pp8 BAS40L marking code s6 SOD-882L PDF

    Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the


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    1N4151WS-V DO-35 1N4151, LL4151. AEC-Q101 2002/95/EC 2002/96/EC OD-323 GS18/10 GS08/3 PDF

    Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the


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    1N4151WS-V DO-35 1N4151, LL4151. AEC-Q101 2002/95/EC 2002/96/EC OD-323 GS18/10 GS08/3 PDF

    Contextual Info: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the


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    1N4151W-V DO-35 1N4151, LL4151. AEC-Q101 2002/95/EC 2002/96/EC OD-123 1N4151W-V 1N4151W-V-GS18 PDF

    Contextual Info: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon epitaxial planar diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation


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    BAV70-V BAV99-V, BAW56-V, BAL99-V. AEC-Q101 2002/95/EC 2002/96/EC GS18/10 GS08/3 OT-23 PDF

    BAW56 GS18

    Abstract: marking code JD BAW56 BAL99 BAV70 BAV99 BAW56 BAW56-GS08
    Contextual Info: BAW56 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a


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    BAW56 BAL99, BAV99, BAV70. OT-23 BAW56-GS18 BAW56-GS08 D-74025 09-Jul-04 BAW56 GS18 marking code JD BAW56 BAL99 BAV70 BAV99 BAW56 BAW56-GS08 PDF

    Contextual Info: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the


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    1N4151W-V DO-35 1N4151, LL4151. AEC-Q101 2002/95/EC 2002/96/EC OD-123 1N4151W-V 1N4151W-V-GS18 PDF

    glass diode color codes

    Contextual Info: LL4151 Small-Signal Diode Reverse Voltage 75V Forward Current 150V Features MiniMELF SOD-80C • Silicon Epitaxial Planar Diode • Fast switching diode in MiniMELF case especially suited for automatic insertion. • This diode is also available in other case styles


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    LL4151 OD-80C) DO-35 1N4151 OD-123 1N4151W. F4/10K 50K/box 100MHz, glass diode color codes PDF

    Contextual Info: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon epitaxial planar diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation


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    BAV70-V BAV99-V, BAW56-V, BAL99-V. AEC-Q101 2002/95/EC 2002/96/EC OT-23 GS18/10 GS08/3 PDF

    Contextual Info: BAS32L _ / v _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed for fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-80C glass envelope with tin-plated


    OCR Scan
    BAS32L BAS32L OD-80C 7Z105Z1 100JT, 7Z10519 PDF

    pin diode sot-23

    Abstract: BAP64-05 marking 5k
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BAP64-05 PIN DIODE SOT-23 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance z


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    OT-23 BAP64-05 OT-23 100MHz 100mA, pin diode sot-23 BAP64-05 marking 5k PDF

    Contextual Info: LL4151 Small-Signal Diode Reverse Voltage 75V Forward Current 150mA Features MiniMELF SOD-80C • Silicon Epitaxial Planar Diode • Fast switching diode in MiniMELF case especially suited for automatic insertion. • This diode is also available in other case styles


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    LL4151 150mA OD-80C) DO-35 1N4151 OD-123 1N4151W. F4/10K 50K/box PDF

    f-100MHz

    Abstract: BAP64-05W RF resistor diode 100ma 20v
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAP64-05W PIN DIODE SOT-323 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance


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    OT-323 BAP64-05W OT-323 100MHz 100mA, f-100MHz BAP64-05W RF resistor diode 100ma 20v PDF