DIODE U1D Search Results

KDZ2.4EV

Abstract: KDZ10EV KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDZ2.0EV~24EV ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. ᴌNominal Voltage Tolerance About ᴦ6%. 1 A ᴌSmall Package : ESC E C B CATHODE MARK FEATURES 2

KTX411T

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX411T EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 ᴌIncluding two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A

24v zener diode

Abstract: KDZ10V KDZ11V KDZ12V KDZ13V KDZ15V KDZ16V KDZ18V KDZ20V KDZ22V
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDZ2.0V~24V ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK L K H F ᴌNominal Voltage Tolerance About ᴦ6%. A ᴌSmall Package : USC 1 E FEATURES

C25V

Abstract: KDV262E
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV262E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. 1 A ᴌLow Series Resistance : rS=0.6ή Typ.

alternator diode 35a

Abstract: alternator diode E35A23VDR E35A23VDS
Contextual Info: SEMICONDUCTOR E35A23VDS, E35A23VDR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E F FEATURES ᴌAverage Forward Current : IO=35A. L2 ᴌZener Voltage : 23V Typ. POLARITY E35A23VDS (+ Type) G C L1 D E35A23VDR (- Type)

KTX311T

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX311T EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 ᴌIncluding two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A

C25V

Abstract: KDV269E
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV269E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. 1 A ᴌLow Series Resistance : rS=0.55ή Typ.

Contextual Info: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. POLARITY L2 E F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)

32V zener

Abstract: alternator diode 50a alternator diode zener diode application E50A37VBR E50A37VBS
Contextual Info: SEMICONDUCTOR E50A37VBS, E50A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ᴌAverage Forward Current : IO=50A. ᴌZener Voltage : 37V Typ. POLARITY E50A37VBS (+ Type) E50A37VBR (- Type) K H MAXIMUM RATING (Ta=25ᴱ)

E30A2CPR

Abstract: E30A2CPS
Contextual Info: SEMICONDUCTOR E30A2CPS, E30A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=30A. ᴌReverse Voltage : 200V Min. E POLARITY L2 F1 E30A2CPS (+ Type) B L1 G E30A2CPR (- Type)

alternator diode 35a

Abstract: 32V zener alternator diode E35A37VBR E35A37VBS
Contextual Info: SEMICONDUCTOR E35A37VBS, E35A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ᴌAverage Forward Current : IO=35A. ᴌZener Voltage : 37V Typ. POLARITY E35A37VBS (+ Type) E35A37VBR (- Type) K H MAXIMUM RATING (Ta=25ᴱ)

E25A2CPR

Abstract: E25A2CPS
Contextual Info: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. E POLARITY L2 F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)

KDV287E

Abstract: VARIABLE CAPACITANCE DIODE C25V
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV287E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE UHF SHF TUNING. FEATURES ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. 1 A ᴌLow Series Resistance : rS=1.9ή Typ.

KTX301U

Abstract: TRANSISTOR A1 TR
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. C A A1 2 C ᴌSimplify circuit design.

Z02W20VY

Abstract: tms3451 Z02W7.5V 682 MARKING SOT-23 Z02W10V Z02W11V C 2120 Y 9.1v zener diode 24v 2a zener diode 2188 zener diode
Contextual Info: SEMICONDUCTOR Z02W2.0V~24V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES E B L L ᴌSmall Package : SOT-23 3 G H A 2 D ᴌNormal Voltage Tolerance About ᴦ2.5%. 1

KTX401U

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX401U EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. 5 1 A 2 C ᴌSimplify circuit design.

KTX301U

Abstract: diode d1
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. 5 1 A 2 C ᴌSimplify circuit design.

Contextual Info: SEMICONDUCTOR KDV350E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL

F15030

Abstract: c5v diode KDV1472
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV1472 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE FM RADIO BAND TUNING APPLICATION. L K H F ᴌVariations of Capacitance Values is Little. A ᴌExcellent C-V Characteristics. 1 E ᴌHigh Capacitance Ratio : C1V/C5V=5.0 Min.

C10V

Abstract: KDV239E
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV239E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF RADIO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌUltra Low Series Resistance : rS=0.44ή(Typ.) 2 MAXIMUM RATING (Ta=25ᴱ)

c5v diode

Abstract: KDV1471
Contextual Info: KDV1471 SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES ᴌHigh Capacitance Ratio : C1V/C5V=5.0 Min. E B L L ᴌExcellent C-V Characteristics. 2 3 G H A ᴌSmall Package. D

KDV350E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV350E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL

alternator diode

Abstract: a3 6 zener B2 Zener E35A23VR E35A23VS
Contextual Info: SEMICONDUCTOR E35A23VS, E35A23VR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 ᴌZener Voltage : 23V Typ. D1 ᴌAverage Forward Current : IO=35A. POLARITY C1 E MAXIMUM RATING (Ta=25ᴱ)

KDV257E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV257E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC A 1 2 SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150