DIODE TO-18 PACKAGE CATHODE Search Results

1N6264

Contextual Info: 1N6264 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment • Mechanically and wavelength matched to the 0.209 5.31 TO-18 series phototransistor 0.184 (4.67) • Hermetically sealed package 0.030 (0.76) NOM

L14G1

Abstract: l14g1 equivalent infrared led L14G2 circuit design L14G2 application note 1N6266 Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor
Contextual Info: 1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor 0.030 (0.76) NOM • Hermetically sealed package

1N6265

Contextual Info: 1N6265 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor • Hermetically sealed package 0.030 (0.76) NOM

20 GHz PIN diode

Abstract: hp pin diode 10 GHz pin diode 3041 "Direct Replacement" hp 5082 7650 pin diode microstrip 6 GHz PIN diode
Contextual Info: 5082-3041 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The 5082-3041 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3041

5082-2711

Contextual Info: 5082-2711 MEDIUM BARRIER SCHOTTKY DIODE PACKAGE STYLE 19 DESCRIPTION: The ASI 5082-2711 is a Silicon Small Signal Schottky Diode for use in broad band and narow band microstrip, coaxial, or wavegide mixer assemblies operating up to 18 GHz. Color Dot indicates

10 GHz pin diode

Abstract: pin diode microstrip Direct Replacement ASI30217 ghz Diode DB20A
Contextual Info: 5082-3170 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: The ASI 5082-3170 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 to 18 GHz. PACKAGE STYLE M-50 FEATURES INCLUDE: • Direct Replacement for HP 5082-3170

Contextual Info: PESD5V0S1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 2 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to

10 gb laser diode

Abstract: 10 gb laser diode 1310 nm NO81 UNCOOLED MQW-FP LD
Contextual Info: 10Gbps 1310 nm MQW-FP Laser Diode Module-TOSA C-13-010-TX-SXXXX Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

2CW4

Abstract: UNCOOLED MQW-FP LD
Contextual Info: 10Gbps 1310 nm MQW-FP Laser Diode Pigtailed Module-Differential TOSA C-13-010-PK-SXXXX Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

10 Gbps TOSA

Abstract: C-13-010-TX-SSC2
Contextual Info: 10 Gbps 1310 nm MQW FP Laser Diode Modules-TOSA PRELIMINARY C-13-010-TX-SSC2 Features • Uncooled FP laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode Packaging • Integrated 4-pin TO-18 TOSA package, with built-in isolator

laser diode 2.5mw

Abstract: 1310nm laser diode for 10Gbps laser diode 1310 nm fiber coupled 10 gb laser diode UNCOOLED MQW-FP LD
Contextual Info: 10Gbps 1310 nm MQW-FP Laser Diode Pigtailed Module-Differential TOSA C-13-010-PK-SXXXX Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

J-STD-20C

Abstract: METELICS DETECTOR DIODE J-STD-20-C A 0503 SMS-202
Contextual Info: SMS202 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It can be used up to 18 GHz and

Contextual Info: SE2460 GaAs Infrared Emitting Diode FEATURES . Miniature, hermetically sealed, pill style, metal can package • 18° nominal beam angle . Wide operating temperature range (-55°C to +125°C) . Ideal for direct mounting to printed circuit boards . 935 nm wavelength

Contextual Info: SE2470 AIGaAs Infrared Emitting Diode FEATURES . Miniature, hermetically sealed, pill style, metal can package . 18° nominal beam angle . Wide operating temperature range (-55°C to +125°C) • Higher power output than GaAs at equivalent drive currents

Contextual Info: SE2460 GaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 18° nominal beam angle • Wide operating temperature range (-55°C to +125°C) • Ideal for direct mounting to printed circuit boards • 935 nm wavelength

SE2460-001

Abstract: se2460
Contextual Info: SE2460 GaAs Infrared Emitting Diode FEATURES • Miniature, hermetically-sealed, pill style, metal can package • 18” nominal beam angle • Wide operating temperature range (-55°C to +125°C) • Ideal for direct mounting to printed circuit boards • 935 nm wavelength

Contextual Info: SE2470 AIGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 18° nominal beam angle • Wide operating temperature range (-55°C to +125°C) • Higher power output than GaAs at equivalent drive currents

SE2470-001

Contextual Info: SE2470 AIGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically-sealed, pill style, metal can package • 18° nominal beam angle • Wide operating temperature range (-55°C to +125°C) • Higher output power than GaAs at equivalent drive currents

1310nm laser diode for 10Gbps

Abstract: 1310nm photodiode for 10Gbps laser DFB 1310nm single ca 91311 Roc 1325 VF
Contextual Info: 10Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TX-SXXXX Features • Uncooled DFB Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

dfb10

Contextual Info: 10 Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TJ-SSC2I Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for SC connector

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping 1 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB MAXIMUM RATINGS

OP295

Abstract: OP290 OP292 OP297AB OP291 OP294 OP296 OP297 OP298 OP299
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP290

Abstract: OP295 OP290C OP291 OP292 OP294 OP296 OP297 OP298 OP299
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP297FAB

Abstract: OP295 OP290 op295b
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an