DIODE TO-18 PACKAGE CATHODE Search Results

Diode SE-05

Abstract: QAL-785-04-F-18-1 QAL-785-04-F-18-2 QAL-785-04-F-18-3 780nm laser diode
Contextual Info: QAL-785-04-F-18-1/2/3 : AIGaAs Laser Diode [ FEATURES ] [ OVERVIEW ] [ APPLICATION ] - Visible Light Output : λp = 780nm - Optical Power Output : 5mW CW - Package Type : TO-18 5.6mmQ^ - Built-in Photo Diode for Monitoring Laser Diode QAL-780-04-D-18-1/2/3 is a MOCVD grown 780nm band

1N6264

Contextual Info: 1N6264 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment • Mechanically and wavelength matched to the 0.209 5.31 TO-18 series phototransistor 0.184 (4.67) • Hermetically sealed package 0.030 (0.76) NOM

L14G1

Abstract: l14g1 equivalent infrared led L14G2 circuit design L14G2 application note 1N6266 Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor
Contextual Info: 1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor 0.030 (0.76) NOM • Hermetically sealed package

1N6265

Contextual Info: 1N6265 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor • Hermetically sealed package 0.030 (0.76) NOM

5082-3340

Abstract: hp pin diode
Contextual Info: 5082-3340 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: The ASI 5082-3340 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 to 18 GHz. PACKAGE STYLE M-50 FEATURES INCLUDE: • Direct Replacement for HP 5082-3340

20 GHz PIN diode

Abstract: hp pin diode 10 GHz pin diode 3041 "Direct Replacement" hp 5082 7650 pin diode microstrip 6 GHz PIN diode
Contextual Info: 5082-3041 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The 5082-3041 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3041

5082-2711

Contextual Info: 5082-2711 MEDIUM BARRIER SCHOTTKY DIODE PACKAGE STYLE 19 DESCRIPTION: The ASI 5082-2711 is a Silicon Small Signal Schottky Diode for use in broad band and narow band microstrip, coaxial, or wavegide mixer assemblies operating up to 18 GHz. Color Dot indicates

5082-2713

Contextual Info: 5082-2713 MEDIUM BARRIER SCHOTTKY DIODE PACKAGE STYLE 19 DESCRIPTION: The ASI 5082-2713 is a Silicon Small Signal Schottky Diode for use in broad band and narow band microstrip, coaxial, or wavegide mixer assemblies operating up to 18 GHz. Color Dot indicates

20 GHz PIN diode

Abstract: 5082-3141 Hp 5082 10 GHz pin diode
Contextual Info: 5082-3141 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: The ASI 5082-3141 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 to 18 GHz. PACKAGE STYLE M-50 FEATURES INCLUDE: • Direct Replacement for HP 5082-3141

10 GHz pin diode

Abstract: pin diode microstrip Direct Replacement ASI30217 ghz Diode DB20A
Contextual Info: 5082-3170 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: The ASI 5082-3170 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 to 18 GHz. PACKAGE STYLE M-50 FEATURES INCLUDE: • Direct Replacement for HP 5082-3170

Contextual Info: 62038 GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 08/18/03 Features: Applications: • • • • • • • Hermetically sealed High output, 940nm Small package End-of-tape indicators Reflective sensors Card readers

Contextual Info: 5082-3040 MICROSTRIP/STRIPLINE PIN DIODE SWITCH DESCRIPTION: PACKAGE STYLE M-50 The ASI 5082-3040 is a Silicon PIN Diode Module Designed for Reflective Attenuator and Switching Applications from 1 GHz to 18 GHz. FEATURES INCLUDE: • Direct Replacement for HP 5082-3040

IE-15KA

Contextual Info: Waitrony Infrared Emitting Diode Module No.: IE-15KA 1. General Description: Dimensions IE-15KA is a high output power GaAs infrared light emitting diode, mounted in a durable, hermetically sealed TO-18 metal can package, which provide years of reliable performance even under demanding

Contextual Info: PESD5V0S1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 2 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to

A1BD

Contextual Info: PESD5V0L1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 1 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to

Contextual Info: PESD5V0L1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 1 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to

10 gb laser diode

Abstract: 10 gb laser diode 1310 nm NO81 UNCOOLED MQW-FP LD
Contextual Info: 10Gbps 1310 nm MQW-FP Laser Diode Module-TOSA C-13-010-TX-SXXXX Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

2CW4

Abstract: UNCOOLED MQW-FP LD
Contextual Info: 10Gbps 1310 nm MQW-FP Laser Diode Pigtailed Module-Differential TOSA C-13-010-PK-SXXXX Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

10 Gbps TOSA

Abstract: C-13-010-TX-SSC2
Contextual Info: 10 Gbps 1310 nm MQW FP Laser Diode Modules-TOSA PRELIMINARY C-13-010-TX-SSC2 Features • Uncooled FP laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode Packaging • Integrated 4-pin TO-18 TOSA package, with built-in isolator

laser diode 2.5mw

Abstract: 1310nm laser diode for 10Gbps laser diode 1310 nm fiber coupled 10 gb laser diode UNCOOLED MQW-FP LD
Contextual Info: 10Gbps 1310 nm MQW-FP Laser Diode Pigtailed Module-Differential TOSA C-13-010-PK-SXXXX Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

J-STD-20C

Abstract: METELICS DETECTOR DIODE J-STD-20-C A 0503 SMS-202
Contextual Info: SMS202 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It can be used up to 18 GHz and

Contextual Info: SMS202 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It can be used up to 18 GHz and

Contextual Info: SE2460 GaAs Infrared Emitting Diode FEATURES . Miniature, hermetically sealed, pill style, metal can package • 18° nominal beam angle . Wide operating temperature range (-55°C to +125°C) . Ideal for direct mounting to printed circuit boards . 935 nm wavelength

Contextual Info: • • • • Center wavelength 1550nm • • • Four-lead package 1550nm FP Laser Diode SM Module Features Low threshold current High speed tr/tf < 0.7ns Built-in InGaAs monitor detector o o Wide operating temperature -40 C to 85 C Hermetically sealed TO-18 package in pigtailed or