DIODE TO-18 PACKAGE Search Results

TSTA7100

Contextual Info: Temic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant

tsta7500

Contextual Info: Temic TSTA7500 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO -18 package. Its flat glass window makes it ideal for

TSTA7300

Contextual Info: Temic TSTA7300 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant in­

MA4SW100

Abstract: 9620* diode MA4SW100-300
Contextual Info: Monolithic PIN Diode Switches MA4SW100, 200, 300 V3.00 Features ● ● ● ● Broadband Performance: Specified 1-18 GHz Usable 1-26 GHz SPST, SPDT Usable 1-20 GHz (SP3T) Insertion Loss 1.2 dB to 18 GHz Isolation 40 dB to 18 GHz Single Chip Replaces up to

SN74F1018

Contextual Info: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

SN74F1018

Contextual Info: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

Contextual Info: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, 870 nm, GaAlAs Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its flat glass window makes it ideal for use with external optics.

L14G1

Abstract: l14g1 equivalent infrared led L14G2 circuit design L14G2 application note 1N6266 Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor
Contextual Info: 1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor 0.030 (0.76) NOM • Hermetically sealed package

1N6265

Contextual Info: 1N6265 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor • Hermetically sealed package 0.030 (0.76) NOM

5V06U

Contextual Info: PESD5V0L6UAS; PESD5V0L6US Low capacitance 6-fold ESD protection diode arrays Rev. 03 — 18 August 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to protect up to six transmission or data lines from the damage caused by ElectroStatic

5c optocoupler

Abstract: C957
Contextual Info: [ s O PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT4 PACKAGE DIMENSIONS DESCRIPTION The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon planar phototransistor. FEATURES Hermetic package

N017Q

Abstract: 15KV AP209 DN017 IEC-61000-4-2
Contextual Info: PAC DN017 CALIFORNIA MICRO DEVICES 18 CHANNEL ESD PROTECTION ARRAY WITH ZENER SUPPLY CLAMP Features • 18-channel ESD protection • Integral Zener diode clamp to suppress supply rail transients • 15KV ESD protection HBM • 15KV contact discharge ESD protection

Contextual Info: E9 RELIABILITY CONDITIONED HERMETIC PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS - 1 I -1 MCT4R PACKAGE DIMENSIONS DESCRIPTION The MCT4R is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to a silicon planar phototransistor.

2CW4

Abstract: UNCOOLED MQW-FP LD
Contextual Info: 10Gbps 1310 nm MQW-FP Laser Diode Pigtailed Module-Differential TOSA C-13-010-PK-SXXXX Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

IDTQS316209

Abstract: QS316209 TYPE XB2 - B G 4 1 3a29
Contextual Info: IDTQS316209 HIGH-SPEED CMOS 18-BIT BUS EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 18-BIT BUS EXCHANGE SWITCH FEATURES: − − − − − − DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs

336b1

Abstract: 1XB2 IDTQS316209 QS316209 8A121 nd445 V1A23
Contextual Info: IDTQS316209 HIGH-SPEED CMOS 18-BIT BUS EXCHANGE SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 18-BIT BUS EXCHANGE SWITCH FEATURES: − − − − − − DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc 5Ω bidirectional switches connect inputs to outputs

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING /fth X. FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MILUMETERS MAX. MIN. NOTES Mechanically and wavelength matched to TO-18

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER IPTIELEETMIICS MCT4 PACKAGE DIMENSIONS DESCRIPTION The MCT4 is a standard four-lead, TO-18 package containing a GaAs infrared emitting diode optically coupled to an NPN silicon planar phototransistor. FEATURES Hermetic package High current transfer ratio; typically 35%

Contextual Info: Tem ic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA 7100 is a high efficiency infrared em itting diode in G aA lA s on G aA lA s technology in a herm etically sealed T O -1 8 package. Its glass lens provides a very high radiant

Contextual Info: Photo Diode Product No: MTD5 0 1 0 N Peak Sensitivity Wavelength: 850nm The MTD5010N is a photo diode in a TO-18 metal can domed package. It is well suited for high reliability and high speed applications. F EATU RES AP P L IC ATIO N S > Ultra High Speed > Optical Switches

10 gb laser diode

Contextual Info: 10Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TX-SXCMI -01 Features • Uncooled DFB Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

1310nm laser diode for 10Gbps

Abstract: 1310nm photodiode for 10Gbps laser DFB 1310nm single ca 91311 Roc 1325 VF
Contextual Info: 10Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TX-SXXXX Features • Uncooled DFB Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

7830-0000-CD

Abstract: 780nm laser diode laser diode TO-18 package laser diode TO-18
Contextual Info: 7830-0000-CD Specifications Device Package Type 780nm 3 mW Laser Diodes Laser Diode TO-18 φ5.6mm DB LECTRO Inc. 3600 boul. Matte suite i Brossard Qc J4Y-2Z2 tel:(450)-444-1424 fax:(450)-444-4714 www.dblectro.com

dfb10

Contextual Info: 10 Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TJ-SSC2I Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for SC connector