DIODE TO-18 PACKAGE Search Results

TSTA7100

Contextual Info: Temic TSTA7100 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a very high radiant

tsta7500

Contextual Info: Temic TSTA7500 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7500 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO -18 package. Its flat glass window makes it ideal for

TSTA7300

Contextual Info: Temic TSTA7300 Semiconductors GaAlAs IR Emitting Diode, Hermetically Sealed TO 18 Case Description TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO-18 package. Its glass lens provides a high radiant in­

Contextual Info: AUK CORP. Infrared Emitting Diode KFL-1ML-N Description The KFL-1ML-N is high power, wide beam angle GaAlAs infrared emitting diode with TO-18 metal stem and clear epoxy lens. this device is relatively low-cost compared to TO-18 can type devices. Pin Connection

Contextual Info: 1S1236 Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleDO-14 Mounting StyleT DescriptionSwitching diode;bv-18 to 32V max;bi-.20mA max;Vo peak -4.5V min. at RL-20 ohms

Contextual Info: PIN DIODE MODULES PIN diode switches PIN DIODE SWITCHES Features TEMEX offers a complete series of Silicon PIN diode switches covering frequencies from 10MHz to 18 GHz in octave or multi-octave bandwidth. These units are available in packaged or surface mount version.

650nm 5mw laser

Abstract: samsung laser diode 650nm 5mw laser diode Laser-Diode sd650-5 650nm "red laser diode" LIGHT LASER DIODE SAMSUNG SD650-5 laser diode TO-18 package RED laser diode operating Temperature
Contextual Info: Samsung Laser Diode SD650nm5mw SD650-5 DATA SHEETS . 650nm 5mW .RED LASER DIODE RED LASER DIODE ABSOLUTE MAXIMUM RATINGS Tc=25 °C TECHNICAL DATA Visible light output 650nm Optical power output 5mW CW Package Type TO-18 Built-in photo diode for monitoring laser output

Photo DIODE (any type) datasheet

Abstract: red diode laser 670NM Laser-Diode LIGHT LASER DIODE SAMSUNG SD670-5 red laser diode DEG22
Contextual Info: Samsung Laser Diode - SD670nm5mw SD670-5 DATA SHEETS . SD670nm 5mW .RED LASER DIODE RED DIODE LASER ABSOLUTE MAXIMUM RATINGS Tc=25 °C TECHNICAL DATA Visible light output 670nm Optical power output 5mW CW Package Type TO-18 Built-in photo diode for monitoring laser output

808nm laser diode

Abstract: diode laser 808nm 200mW laser diode 808nm 808nm TO18 Laser 808nm 300 mw Laser Diode 250mW P200 300 mw IR Laser Diode laser diode 200mw 808nm 300 mw laser diode
Contextual Info: SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-01 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) Bottomview ■Absolute Maximum Ratings(Tc=25℃) Symbol Parameter

laser diode 635nm

Abstract: laser diode 635 nm SLD-635-P10-01
Contextual Info: SLD-635-P10-01 UNION OPTRONICS CORP. 635nm Laser Diode 635nm Red Laser Diode SLD-635-P10-01 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) Bottomview ■Absolute Maximum Ratings(Tc=25℃) Symbols Parameter

808nm laser diode

Abstract: laser diode 808nm diode laser 808nm 200mW laser diode 200mw TO18 Laser 808nm 300 mw ir laser 808nm laser 808nm P200 CORP400
Contextual Info: SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-02 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) ■Absolute Maximum Ratings(Tc=25℃) Symbol Parameter Po Optical Output

MA4SW100

Abstract: 9620* diode MA4SW100-300
Contextual Info: Monolithic PIN Diode Switches MA4SW100, 200, 300 V3.00 Features ● ● ● ● Broadband Performance: Specified 1-18 GHz Usable 1-26 GHz SPST, SPDT Usable 1-20 GHz (SP3T) Insertion Loss 1.2 dB to 18 GHz Isolation 40 dB to 18 GHz Single Chip Replaces up to

405nm Laser Diode

Abstract: 405nm laser laser diode 405nm 405nm 100MW
Contextual Info: 405nm Laser Diode Outline Dimension „ Features Output Power: 100mW CW TO-18 Package Efficient Quantum Well Structure Standard TO-18 Package „ Absolute Maximum Ratings Item (Tc=25℃) Symbol Absolute Maximum Unit Ratings Optical Output Power Po 100 mW LD Reverse Voltage

405nm laser

Abstract: 405nm Laser 5 mw 405nm Laser Diode 405nm 140mW
Contextual Info: 405nm Laser Diode Outline Dimension „ Features Output Power: 140mW CW TO-18 Package Efficient Quantum Well Structure Standard TO-18 Package „ Absolute Maximum Ratings Item (Tc=25℃) Symbol Absolute Maximum Unit Ratings Optical Output Power Po 140 mW LD Reverse Voltage

"back diode"

Abstract: back Tunnel diode back diode tunnel diode specifications tunnel diodes Tunnel Diode
Contextual Info: ASTD1020 PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD1020 is a Tunnel Diodes Optimized for Operation as Back Diode Detector in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times

SN74F1018

Contextual Info: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

patents integrated SRAMS in 1993

Abstract: S1 DIODE schottky SN74F1018 DIODE A16 DIODE a5 A7 diode schottky
Contextual Info: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

SN74F1018

Contextual Info: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

SN74F1018

Contextual Info: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

SN74F1018

Contextual Info: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

SN74F1018

Contextual Info: SN74F1018 18-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

SN74F1018

Contextual Info: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

SN74F1018

Abstract: SN74F1018DW
Contextual Info: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for

SN74F1018

Contextual Info: SN74F1018 18ĆBIT SCHOTTKY BARRIER DIODE RĆC BUSĆTERMINATION ARRAY SDFS094 − NOVEMBER 1992 − REVISED DECEMBER 1993 • • • DW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 18-Bit Array Structure Suited for