5v4 tube
Abstract: 5V4GA 5v4 rectifier tube 5V4 5v4 g 5V4G tube 5V4GA general electric tube 5v4g
Contextual Info: 5 V 4 -G A ET-T951 Page 1 5V4-GA 7-55 TWIN DIODE ¿0 ^ FOR FULL-WAVE POWER-RECTIFIER APPLICATIONS TUBES DESCRIPTION AND RATING The 5V4-GA is a high-vacuum rectifier intended for use in full-wave appli cations. The tube incorporates an indirectly heated cathode which is internally
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et-t951b5-15b5-1215v4 tube+85v4ga5v4 rectifiertube 5v45v4 g5v4gtube 5v4gageneral electrictube 5v4g
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f650
Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
Contextual Info: NEC j m + T / v r x K 7 K Diode A rra y A u X l f * * v T ; u ^ v U K 7 P A 5 4 H K K & Ä X - T ^ V ^ J S Silicon Epitaxial Diode Array High Speed Switching / ¿ P A 54H f ± , v S IP fc, # '/ — K Ä S Ä iS X ^ IJ y y ? *• - K 7 W (6 * ^ -) « • » H / P A C K A G E D IM EN SIO N S
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pa54hpa54hiin19-5max-1611t+11-5611tsifi-27f650upa54hdiode goc 63411kdiode 3ldiode t420lt 745 st802t514
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T1EB
Abstract: 125CV 2DI75Z-100 30S3 T930 2di75z100 OA9 diode
Contextual Info: 2DI75Z-100 75a ' U ± y < r7 - ^ 3 . - ) V : Outline Drawings POW ER TRAN SISTO R MODULE F e a tu re s • ffiifiS High Voltage • 7 V— V — K rtj • A S O A '& i' • Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type : Applications
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2di75z-100095t/r89t1eb125cv+430s3t9302di75z100oa9 diode
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Contextual Info: K /D io d e s 1SS244 V 1J =1> I tf $ * y 7 ; U7°U - d"JKfi I E * < 7 ^ ^- ?'-f - K Silicon Epitaxial Planar High-Voltage Switching Mini-Diode • ^W ^TtSEI/'Dim ensions Unit : mm • # * 1) ra I f t / i "T5 & o 2) 3) S/Jv (DO-34) T * So - tt- ^ I - A 'A
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IC951
Abstract: stm diode C818 smd diode mx c321 ic501 smd diode ge r803 pin diagram of optical detector IC501 R435 RF receiver MODULE CIRCUIT DIAGRAM LDR 03 PHOTO RESISTOR 2222A SMD transistor C458
Contextual Info: APPLICATION NOTE Fiber optic transceiver demo board STM16 OM5801 AN96051 Philips Semiconductors Philips Semiconductors OM5801 Application Note AN96051 2 Philips Semiconductors Fiber optic transceiver demo board STM16 Application Note AN96051 APPLICATION NOTE
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stm16om5801an96051ic951+9stm diode c818smd diode mx c321ic501smd diode ge r803pin diagram of optical detector ic501r435 rf receiver module circuit diagramldr 03 photo resistor2222a smdtransistor c458
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MCC72-12I01
Abstract: v06v 06io1 diode c72
Contextual Info: 4bE D • 4bôb22b 000116Ö 3 H I X Y I X Y S CORP BIXYS "T “25-Z3 Version 1 400 600 800 1200 1400 1600 MCC72-06ÌO1 MCC72-08ÎO1 MCC72-12Ì01 MCC72-14Ì01 MCC72-16Ì01 Test conditions ImMâi Ifmhs Tvj=T vjm Tc=85°C; 180°sin Itsmi Ifsm (di/dtJc Version 8
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mcc72mcd72d72-04io8d72-06io8+10d72-08io8mcd72-12iofid72-14io8d72-16io8mcc72-06mcc72-08mcc72-12i01v06v06io1diode c72
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characteristics of zener diode
Abstract: 1DI300ZP-120 zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352
Contextual Info: 1 D 3 I Z P - 1 2 3 A « ± y<r7 - h : Outline Drawings POWER TRANSISTOR MODULE •Features • hFE^^V-' High DC Current Gain • KF*3/K •smmmuimm : Applications • General Purpose Inverter >'<— 9 • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools
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1di300zp-12026-35kge82988095t/r89+5characteristics of zener diodezener diode b355m1141di300zp120transistor bo 352
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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irf 544 n mosfetspice 2 computer models for hexfets4af2npp irtransistor d586+6induction cooker fault finding circuit diagramstransistor mos fet d482electronics digesttransistor d357 equivalentd515 transistor1rf511
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1DI300ZP-120
Abstract: M114 zener diode b355
Contextual Info: 1 D I 3 0 0 Z P - 1 2 0 3 0 0 A / < 7 - «± : Outline Drawings h ft POWER TRANSISTOR MODULE I- 21 -|-Ì3 • Features H igh DC C u rre n t Gain ■ ffljis : A p p lic a tio n s • yy<—$ General Purpose Inverter • U n in te rru p tib le P ow er S upply
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1di300zp-12026-35kge82988095t/rb9+2m114zener diode b355
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ps4 schematic
Abstract: 820 B10 45g D5036 c945 TRANSISTOR equivalent D74 DIODE zener diode c531 c337 transistor nec equivalent smd transistor A7p vt1631 vt8235
Contextual Info: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS4 2. PCI & IRQ & DMA Description : Version : 0.6 3. Block Diagram : D C 4. Nat name Description :
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no266100mhz1-201209-601a20t80mil+15c40r1e106k-tsm680pfsmt0603pn800vt8235ceps4 schematic820 b10 45gd5036c945 transistor equivalentd74 diodezener diode c531c337 transistor nec equivalentsmd transistor a7pvt1631vt8235
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panasonic encoder MFE
Abstract: ps3 schematic 935 b10 45g 939 b10 45g transistor C732 PN800 c828 npn transistor l46f pin configuration NPN transistor c945 NPN Diode CK 99A
Contextual Info: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS3 2. PCI & IRQ & DMA Description : Version : 0.4 3. Block Diagram : D C 4. Nat name Description :
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no266100mhzfbm-11-201209-601a20t80mil+14cc40r1e106k-tsm680pfsmt0603pn800vt8235cepanasonic encoder mfeps3 schematic935 b10 45g939 b10 45gtransistor c732c828 npn transistorl46fpin configuration npn transistor c945 npndiode ck 99a
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ps3 schematic
Abstract: VT8235CE DO-214C smd transistor A7p c945 TRANSISTOR equivalent PN800 VT1631 hcl l21 usb power supply circuit diagram ENE CP2211 foxconn
Contextual Info: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS3 2. PCI & IRQ & DMA Description : Version : 0.4 3. Block Diagram : D C 4. Nat name Description :
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no266taiwa416100mhzfbm-11-201209-601a20t+1480mil680pfsmt0603cc40r1e106k-tsmpn800ps3 schematicvt8235cedo-214csmd transistor a7pc945 transistor equivalentvt1631hcl l21 usb power supply circuit diagramene cp2211foxconn
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diode t95
Abstract: N02R T95 Diode T95N02R
Contextual Info: NTD95N02R Power MOSFET 95 A, 24 V, N−Channel DPAK Features • • • • High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses http://onsemi.com V(BR)DSS
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ntd95n02rdiode t95n02rt95 diode+1t95n02r
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n02rg
Abstract: diode t95 T95N02R T 60 n02rg ON n02rg T95N02RG NTD95N02R 369D NTD95N02RG NTD95N02RT4
Contextual Info: NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb−Free Packages are Available
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ntd95n02rntd95n02r/dn02rgdiode t95+7t95n02rt 60 n02rgon n02rgt95n02rg369dntd95n02rgntd95n02rt4
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Contextual Info: NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb−Free Packages are Available
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n02rg
Abstract: ON n02rg n02r diode t95 NTD95N02RT4G 369D NTD95N02R NTD95N02RG NTD95N02RT4 T 60 n02rg
Contextual Info: NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb−Free Packages are Available
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ntd95n02rntd95n02r/dn02rgon n02rg+7n02rdiode t95ntd95n02rt4g369dntd95n02rgntd95n02rt4t 60 n02rg
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L9959
Contextual Info: 6DI100M -050 iooa ‘ Outline Drawings POWER TRANSISTOR MODULE 17 6 14 14 6 17 1 —ti—¡i—ri—n r : Features • H igh DC C urrent Gain H ig h speed s w itc h in g • 7 'J —A A • KftiWWt Kl*9fi& In c lu d in g Free W h e e lin g D io d e Insu la te d Type
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6di100me82988l995-9t95t/r89+2shl50l9959
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82801HBM
Abstract: 82801H ICH8M T8300 82801HBM Datasheet T8100 Intel BGA PJ26G 82801HB intel Penryn
Contextual Info: Intel Core 2 Duo Processor and Intel® Core™2 Extreme Processor on 45-nm Process for Platforms Based on Mobile Intel® 965 Express Chipset Family Datasheet January 2008 Document Number: 318914-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
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45-nm82801hbm82801hich8m+7t830082801hbm datasheett8100intel bgapj26g82801hbintel penryn
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1089QB
Abstract: bourns tisp
Contextual Info: CO M PL IA NT TISP61089QB *R oH S PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR TISP61089QB SLIC Overvoltage Protector Quad Voltage-Programmable Protector - Wide -20 V to -155 V Programming Range - Low 5 mA max. Gate Triggering Current
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tisp61089qbyd/t-950p951-781-55001089qb+1bourns tisp
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diode k2
Abstract: TISP61089Q 61089Q D008 GR-1089-CORE TISP61089QDR-S JESD51-7
Contextual Info: CO M PL IA NT TISP61089Q *R oH S PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR TISP61089Q SLIC Overvoltage Protector Quad Voltage-Programmable Protector - Wide -20 V to -155 V Programming Range - Low 5 mA max. Gate Triggering Current
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tisp61089qyd/t-950forw1-7685510diode k2+561089qd008gr-1089-coretisp61089qdr-sjesd51-7
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6mb120f-060
Abstract: MPC80 6MBI20F-060 MLE20 6mb120 M604 T151 T810 T930 20A igbt
Contextual Info: 6MBI20F-060 20A IGBT ^ S ± ^ < 7 — mm-tm : Outline Drawings z l- ;u IGBT MODULE • t t f t : Features • Low Saturation Voltags • « G E E t t ( M O S * '- M I S ) • IJ Voltage Drive Variety of Pow er Capacity Series * Applications >"< — £ >AC, D C t f — # ? > ' ?
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6mbi20f-060i95t/r89shl506mb120f-060+8mpc80mle206mb120m604t151t810t93020a igbt
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1089QB
Abstract: 5k2a t950
Contextual Info: CO M PL IA NT TISP61089QB *R oH S PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR TISP61089QB SLIC Overvoltage Protector Quad Voltage-Programmable Protector - Wide -20 V to -155 V Programming Range - Low 5 mA max. Gate Triggering Current
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tisp61089qbyd/t-950p57001089qb+25k2at950
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1089QB
Abstract: TISP61089QB TISP61089Q TISP61089QBDR-S
Contextual Info: CO M PL IA NT TISP61089QB *R oH S PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR TISP61089QB SLIC Overvoltage Protector Quad Voltage-Programmable Protector - Wide -20 V to -155 V Programming Range - Low 5 mA max. Gate Triggering Current
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tisp61089qbyd/t-950p951-781-55001089qb+2tisp61089qtisp61089qbdr-s
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6MBI20F-060
Contextual Info: 6MBI20F-060 20A IGBT =£'>^-)\y ï ± ' < 7 — . JU IJ W N -S S : Outline Drawings IGBT MODULE Features • fl£ fS in /± L o w S a tu ra tio n V o lta g e • V E B tt (M O S 'r - H # & ) • M B V a r i e t y V o lta g e D rive o f P ow er C a p a city Series
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