DIODE T7 Search Results

diode super fast

Contextual Info: Outline äfWTctf /*1? —r / W M i 7 lJ 7 n ztf'f* - t - K, > 3 7 K, □ - Shindengen has an abundance of power devices, such :, m as bridge diode, super fast recovery diode, schottky K, MOSFETi^pq barrier diode, Muliti-purpose single diode, power transistor

B455

Abstract: NDL5081 IMDL5080 NDL5080 1310 nm laser diode
Contextual Info: 30E D I b42?52S I 002=1554 =1 r - ^ i - g T7 r N E C E L E C T R ONI CS LASER DIODE INC NDL5080 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N NDL5080 is a 1310 nm laser diode especially designed for optical data communications. The DC-PBH Double Channel Planar

Contextual Info: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design

Contextual Info: UM9301 PIN DIODE COMMERCIAL ATTENUATOR DIODE Features • • • • Specified low distortion Low rectification properties at low reverse bias Resistance specified at 3 current points High reliability fused-in-glass construction Description The UM9301 PIN Diode utilizes a special

Contextual Info: ERD24-06-ERD74-06I12A •600V • : Outline Drawings FAST RECOVERY DIODE : Features • Glass passivated chip • High reverse voltage capability. • Stud mounted : Applications • Sw itching power supplies • Free-wheel diode • Sn u b b e r diode •

Contextual Info: T> m b2E N E C bM27SHS 0Q374Ö3 EL ECTRONI CS T71 W N E C E LASER DIODE INC / N D L5084 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E SC RIPTIO N N D L 5 0 8 4 is a 1 3 1 0 nm laser diode especially designed fo r optic a l data com m unications. The M esa-type DC-PBH Double

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: AN4505 AN4506 Calculation of major IGBT operating parameters
Contextual Info: AN4504 Application Note AN4504 IGBT Ratings And Characteristics Application Note Replaces September 2000 version, AN4504-3.0 Load AN4504-3.1 July 2002 PNP VD applications this diode acts as a free-wheeling diode or as a protection diode. Fig. 2 illustrates the packages used by Dynex

stta506d

Contextual Info: SGS-THOMSON * t7 STTA506D/F it TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 5A V rrm 600V trr (typ) 20ns Vf V 1.5V (max) FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode.

ESC021M-15

Abstract: T151 T760 T930 t1511 A5-51
Contextual Info: E S C 021M -15 sa i— K Outline Drawings FAST RECOVERY DIODE Features Dam per diode for high definition TV and high resolution display. Dam per and m odulater diode are jointed in a body. Insulated package by fully molding. m m m & m Connection Diagram

Contextual Info: N AUER PHILIPS/DISCRETE bbSB'lBl Q D S b n S T3T bC,E APX BAS15 SILICON DIODE Diode in a DO-34 envelope intended for general purpose applications. Because of its smallness the BAS15 is specially suitable for hybrid mounting, as protection diode in reed relays, etc.

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

LD-2375

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE MODULE NDL7710PA 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED MQW-DFB LASER DIODE MODULE for 2.5 Gb/s DESCRIPTION PACKAGE DIMENSIONS NDL7710PA is a 1 550 nm laser diode butterfly package in millimeters m odule with a singlemode fiber fo r 2.5 Gb/s optical

IN4002A

Abstract: IN4002 1N4002A
Contextual Info: 7fi2ûcn cl 000=1015 T77 • RHM ROHm Specilicanon Page Products Type T of 1N4002A, Glass Sealed R ectifying Diode i Glass Sealed R ectifying Diode 1. PRODUCTS S ilic o n d iffu sed ju n ctio n 1H4002A 2. TYPE 3. APPLICATION General r e c tif ic a tio n

Contextual Info: SKNa 102 Stud Diode Avalanche Diode SKNa 102 8NO2P:1 ?M2B@ R D77 $ N:&=1:5: %&'5+ J3/ 3(,1(5350 3.+/&,13(P E:&= 2:1( 8 YZ77 ¥777 ¥D77 ¥677 ¥Z77 ¥T77 ?M$8 R CD6 $ N01(S CT7U >) R T7 VEP @GH& C7D[YZ @GH& C7D[¥7 @GH& C7D[¥D @GH& C7D[¥6 @GH& C7D[¥Z

marking JC diode

Abstract: SG20JC6M diode ir01
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG20JC6M 60V 20A Feature • T j= i5 r c • Tj=150°C • T7JIÆ-JI/ K • Full M olded • lR = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away •« » W Œ 2 k V S S I • Dielectric Strength 2kV

Contextual Info: y a 7 h Surface Mounting Device U T7# -< % — K Schottky Barrier Diode _ Twin Diode IWJfê vhÆE] OUTLINE DIMENSIONS DF20SC9M 90V 2QA KEUM •S M D •T j 150t; #Phhsm Tl K^ y' J i S à l •SR» • D c /D c _ iv n - ÿ • * « . y -A . 0A «ü •aïs.

ERE24

Abstract: ERE74 RE74 05ash
Contextual Info: ERE24ERE74 2 oa FA ST R E C O V E R Y DIODE Features • Glass passivated chip • Xf 'yVf ô Stud mounted : A p p lica tio n s • M Switching power supplies • -f-a-y/'C— Free-wheel diode • ' <7— Snubber diode • Others. M a x im u m Ratings and C haracteristics

scr 300 amps

Abstract: T30P600S scr 250 amps 2000 Volt D77P4400 D52P1800S T52P800S 5000 volt scr D30P400S T30P700S D38P1000S
Contextual Info: DIODE CAPSULES & SCR CAPSULES Diode Capsules CKE Number D30P400S D30P1200S D38P750S D38P1000S D38P1000S1 D38P1000S3 D38P1200S D38P1500S D52P1800S D52P2400S D77P2900S D77P3900S D77P4400S Vrrm volts 500-1500 500-1500 1500-3000 1000-2000 1500-2600 3500-4500

Contextual Info: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55

Contextual Info: MON35W42 STANDARD MICROSYSTEMS CORPORATION Hardware Monitoring IC with Thermal Diode Interface FEATURES • Monitoring Items - • • 3 Thermal Inputs From Remote Thermistors or 2N3904 NPN-type Transistors or Pentium II Deschutes Thermal Diode Output

DIODE SMD 10A

Abstract: BAA SMD CODE MARKING smd marking code KN BAS55 smd code marking LF sot23
Contextual Info: Philips Semiconductors Product specification High-speed diode BAS55 FEATURES DESCRIPTION • Small plastic SMD package The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 package.

Contextual Info: Product specification Philips Semiconductors Schottky barrier diode BAT85 FEATURES DESCRIPTION • Low forward voltage • Guard ring protected Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68

a548

Abstract: ESC011M-15 T151 T460 T760 T930
Contextual Info: E S C 1 1 M - 1 5 5 A IW K ’+ jS I Outline Drawings 5 .5 * ° 3 FAST RECOVERY DIODE 5 .5 * ° 3 <t>3.2 3.5 • f t « : Features • KiftttTv, Dam per diode fo r high d e finition TV and 0.6 high resolution display. •9 —YO>&kit Dam per and m odulater diode are jointed

smd diode 106a

Abstract: smd 106a SOD106A diode t37 BYG90-90 philips Schottky diode very high current schottky diode diode package outline schottky barrier rectifier diode 15 A schottky barrier
Contextual Info: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD