DIODE T50 Search Results

Contextual Info: Philips Semicon tTE ] bbS3^31 00Sbl7fl T50 H A P X Silicon planar epitaxial Product specification N AP1E:R PHILIPS/DISCRETE BAL74 high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

T589N

Abstract: TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N
Contextual Info: Anpreßkraft Scheibenbauelemente Clamping Force Disc-Components Diagramm: Federsäulenkurven 1 - 8 für Komplettsätze for complete stacks Diode Diode D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N D2659N D5809N D8019N Anpreßkraft [kN] Clamping Force [kN]

marking POJ diode

Abstract: MMBV432LTI MARKING YA SOT-23 MMBV432LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Silicon ~ning Order this document by MMBV432LT1/D DATA Diode MMBV432LTI This device is designed for FM tuning, general frequency control and tuning, or any top–of–th+line application requiring back–to–back diode configuration for minimum

IN5225

Abstract: 1N4154 marking DO35 DO-35 BLUE CATHODE
Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

1N4154

Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

5082-2804

Abstract: 5082-2805 1N5712 5082-2080 2800-Series 5082-2826 5082-XXXX 5082-2811 1N5711 RS-296-D
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2835 5082-2835 General purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimised for

1S923

Abstract: IN5225 175 WIV High Switching
Contextual Info: 1S923 1S923 General Description: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. 0.500 Minimum 12.70 Typ 1.000

IN5225

Abstract: 1N486B DO-35 PACKAGE liner marking code
Contextual Info: 1N486B General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. General Purpose Low Leakage Diode This product is light sensitive, any damage to the body coating

Contextual Info: SONY 1000mW High Power Laser Diode Description The SLD304XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by controlling the laser chip temperature.

Contextual Info: ESJ A9 8 6 k V 8 , k V : Outline Drawings HIGH VOLTAGE SILICO N DIODE E S JA 9 8 (i, -yT'5:1 l- T iijh L fc E S JA 9 8 is high reliability resin molded type high seepd high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.

T1081N

Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
Contextual Info: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N

NE527

Abstract: 0405B NE527D NE527N NE529
Contextual Info: Philips Semiconductors Linear Products Product specification Voltage comparator NE527 DESCRIPTION PIN CONFIGURATIONS_ The NE527 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology with

NE527

Abstract: TSE 151 NE527D
Contextual Info: Philips Semiconductors Linear Products Product specification Voltage comparator NE527 DESCRIPTION PIN CONFIGURATIONS_ The NE527 is a high-speed analog voltage comparator which, for the first time, mates state-of-the-art Schottky diode technology with

1SS400

Contextual Info: 1SS400 Diodes_ High-Speed Switching Diode 1SS400 •E xternal dim ensions Units: mm •A pplications High speed switching CATHODE MARK •Features 1) Extremely small surface mounting type.(EMD2) 2) High Speed.(typical recovery time = 1.2ns Typ.)

Contextual Info: Philips Semiconductors Product specification Dual diode fast, high-voltage FEATURES BYM359X-1500 SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab

1N5712 spice

Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented

sanyo 1500uF 6.3V capacitor

Abstract: K30 mosfet ceramic capacitor 4700pf 63V R5C DIODE sanyo 1500UF pentium MOTHERBOARD CIRCUIT diagram R5B transistor PBYR1035B IRL3303 IRU3033
Contextual Info: IRU3034 8-PIN PWM SWITCHER CONTROLLER IC PRELIMINARY DATASHEET FEATURES DESCRIPTION 8-pin SOIC switching controller with HICCUP current limiting reduces diode power dissipation to less than 1% of normal operation Soft start capacitor allows for smooth output

Contextual Info: Ordering number : EN3001 SB20-03B Schottky Barrier Diode 30V, 2A Rectifier Applications • High frequency rectification switching regulators, converters, choppers to>II Features • Low forward voltage (Vp max = 0.55V) • Fast reverse recovery time (trr max = 20ns)

T120

Abstract: T150
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 96 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 96 Standard Gate Leads for Disc Type Devices Leads and gate leads must be ordered separately Disc outline/page Material T41.14/75

FJH1102

Abstract: 3310 h3 22 52
Contextual Info: FJH1102 Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY General Description: An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere.

cs-7 r5a

Abstract: sanyo 1500uF 6.3V capacitor PBYR1035B sanyo 1500UF R5C DIODE SMT resistor SANYO 1000uF 35V TSC500 sanyo 1500uF capacitor SURFACE MOUNT RESISTOR
Contextual Info: Data Sheet No. PD94148 IRU3034 8-PIN PWM SWITCHER CONTROLLER IC DESCRIPTION FEATURES 8-Pin SOIC switching controller with HICCUP current limiting reduces diode power dissipation to less than 1% of normal operation Soft-Start capacitor allows for smooth output

Tape and Reel Packaging Specifications

Abstract: FJH1101 IN5225
Contextual Info: FJH1101 Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY General Description: An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere.

1648M

Abstract: 1648m/b
Contextual Info: ^ MOTOROLA Military 1648M Voltage Controlled Oscillator ELECTRICALLY TESTED PER: MPG 1648M The 1648M requires an external parallel tank circuit consisting of the inductor (L) capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage