DIODE T4 Search Results

U2550

Abstract: HL1361A SR3038 Hitachi Scans-001
Contextual Info: 51E D HL1361A-Laser Diode •I MMTbSDS ODllbEb T43 ■ H i m - Under Development HITACHI/ OPTOELECTRONICS - Description HL1361A is a 1.3 ,um InGaAsP distributedfeedback (DFB) laser diode with X/4 phase shifted.

Contextual Info: N E C ELECTRONICS INC b£E ]> • b427525 003?=]^ T4Ü BINECE DATA SHEET NEC LASER DIODE MODULE NDL5776P ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH PULSED LASER DIODE 14 PIN DIP MODULE W ITH SINGLEMODE FIBER DESCRIPTION NDL5776P is a 1 550 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit

IDG 600

Abstract: M61880FP 20P2N-A M61880
Contextual Info: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.

1n4148ws

Contextual Info: SOD-323 Plastic-Encapsulate Diode BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 Features 1.00 1.70 Marking: T4 0.30 • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance

Contextual Info: 300mAmps Surface Mount Fast Switching Diode Mechanical Dimension BAV16WS Description SOD-323 MARKING: T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit 100 V 75 V VR RMS 53 V Forward Continuous Current

Contextual Info: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS

1PS184

Abstract: smd marking code KN SC59 high speed double diode
Contextual Info: N AME R PHILIPS/DISCRETE bTE bbS3T31 D QGS7QSS Philips Semiconductors T4b * A P X Preliminary specification High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. PARAMETER CONDITIONS

T4 SOD-123

Abstract: diode marking T4 sod123 DIODE T4 marking sod 123 t4 marking A2 SOD-123
Contextual Info: SOD-123 Plastic-Encapsulate Diode BAV16W/1N4148W FAST SWITCHING DIODE SOD-123 Features • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 1.05 · · 2.70 1.6 Marking: T6,T4

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UAD92 DIODE SILICON DIODE  DESCRIPTION The UTC UAD92 is a silicon diode, it uses UTC’s advanced technology to provide customers with high average output current.  FEATURES * Low VF * Super high speed switching  

1N4148WS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 Features 1.00 1.70 Marking: T4 0.30 • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications

Contextual Info: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.

Contextual Info: INTEGRATED CIRCUITS u im UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection

Contextual Info: LM91 LM91 Diode Input Digital Temperature Sensor with Two-Wire Interface Literature Number: SNOS997 LM91 Diode Input Digital Temperature Sensor with Two-Wire Interface General Description The LM91 is a remote diode temperature sensor, Delta-Sigma analog-to-digital converter, and digital

NXP SMD DIODE MARKING CODE T4

Contextual Info: SO T4 16 BAS116T Single low leakage current switching diode Rev. 2 — 9 July 2012 Product data sheet 1. Product profile 1.1 General description Single low leakage current switching diode, encapsulated in an ultra small SOT416 SC-75 Surface-Mounted Device (SMD) plastic package.

Contextual Info: LM84 LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS108B LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface General Description The LM84 is a remote diode temperature sensor, Delta-Sigma analog-to-digital converter, and digital

MBN1200H45E2-H

Contextual Info: DIODE MODULE Spec.No.SR2-SP-09006 R2 P1 MDM1200H45E2 FEATURES  Low VF diode module.  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .

1N4148 JANTX microsemi

Abstract: 1N4148 JANTX 1N4148 JANTXV 1N4148UB 1n4148 general diode microsemi 1n4148 EIA-418D
Contextual Info: 1N4148UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UB switching/signal diode features ceramic bodied construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching

1N4148 JANTX microsemi

Abstract: 1N4148 JANTXV MELF Package EIA-418D
Contextual Info: 1N4148UBC Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UBC switching/signal diode features ceramic body with ceramic lid construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: AN4505 AN4506 Calculation of major IGBT operating parameters
Contextual Info: AN4504 Application Note AN4504 IGBT Ratings And Characteristics Application Note Replaces September 2000 version, AN4504-3.0 Load AN4504-3.1 July 2002 PNP VD applications this diode acts as a free-wheeling diode or as a protection diode. Fig. 2 illustrates the packages used by Dynex

E78240

Abstract: EM X100 M6 CD61 CD611616A CS61 K1 module powerex cd61
Contextual Info: CD61_16A CN61 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 OUTLINE DRAWING B F G 1 2 TM POW-R-BLOK Dual/Single Diode Isolated Modules Up to 165 Amperes & 1600 Volts Powerex Dual Diode & Single Diode Modules are designed for use in

Contextual Info: N AflER PHILIPS/DISCRETE b^E D m bb53^31 DDSb4b5 53b IAPX BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television

1N4148 JANTXV

Abstract: 1N4148UB2 EIA-418D
Contextual Info: 1N4148UB2 Compliant Two Pin Ceramic Switching Diode Qualified per MIL-PRF-19500/116 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 1N4148UB2 switching/signal diode features ceramic body construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching