DIODE T B 8A Search Results

Contextual Info: U-UTs^ ^ t- K Super F ast Recovery Diode Single Diode OUTLINE DIMENSIONS D8L60 Case : ITO-220 600V 8A • B B Œ • tr r 7 0 n s • 7 J l/ E - J b K •PFC •SRB • 7 U -7 t w ju • T V + B , H8Œ • Ë fë ü RATINGS • ÎÊ J 'f J t ^ S È f ë

ir1f

Abstract: SHINDENGEN DIODE
Contextual Info: n - n z # ' i t - K Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS SF8L60 600V 8A •B H Œ •trr7 0 n s 0 T L Î 7 b :E - JU K •Se«SBŒ2 KV SEŒ ffl Ì Ì •RFC • SRB 0 7 U - itW J b •TV+B. STO MÏÏtèm RATINGS Absolute Maximum Ratings

Contextual Info: P - P Z & U - F Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS SF8L60 600V 8A •H U E •trr7 0 n s • m ± 7 i\ Æ - ib K •Â  Œ 2 K V S K E H U •RFC •SRSÌB •y u -m -o b •TV+B, • Æ tè fi RATINGS Absolute Maximum Ratings * B n

5am8

Abstract: 6AM8A 6CB6 6AL5 pentode 6AM8 combined video
Contextual Info: SYLVANIA TYPE T6± 6AM 8 6AM8A 5AM8 w DIODE PENTODE MECHANICAL DATA B u lb .T-6 Vi, O utline 6-2 B utto n 9-Pin

117L7

Abstract: 5 volts audio amplifier II7L7/M7GT Ef 5000 pentode Tung-Sol AF 239 S rs tube DC M7* DIODE Scans-0017257
Contextual Info: II7L7/M 7G T T U N6 - S 0 I . DIODE-BEAM PENTODE FOR POWER R E C T IF IE R AND AU D IO O U T P U T A P P L IC A T IO N S C O A T E D U N IP O T E N T IA L C A T H O D E S B O T T O M V IE W A N Y M O U N T IN G P O S IT IO N BASING DIAGRAM JEDEC 8AO G LASS B U L B

1 watt diode

Abstract: 8ac9 "Receiving Tubes" E12-70 diode 330
Contextual Info: S ylvan ia T ech nical M an u a l 44 nm n 6AC9 8AC9 C o lo r T e le v is io n T yp e IF AMPLIFIER PHASE DETECTOR G eneral Purpose Pentode and Double Diode C o n s t r u c t io n . C o m p a c tr o n T-9 B ase .B u tto n 12 P in , E12-70

ESAC33M

Abstract: T151 Diode LT 02 A148 a148 diode
Contextual Info: E S A C 3 3 M C , I N I , D ( s a ) FAST RECOVERY DIODE • t t f t : Features Insulated package by fully m olding. m m & rn C o nnectio n D iagram High voltage by mesa design. • B fS B tt High reliability ESAC33M-nrJC : A p p licatio ns °— W —

Contextual Info: bSE D INTERNATIONAL RECTIFIER • MÖ55452 DG177SS flôl ■ INR PD-2.342 International B Rectifier HEXFRED Provisional Data Sheet HFA16TA60C u l t r a f a s t , s o f t RECOVERY DIODE 600V, 16A Major Ratings and Characteristics per Leg Characteristics

9A1 diode

Abstract: rf triode diagrams 7a2 diode brimar
Contextual Info: DOUBLE DIODE TRIODE TYPE 11A.2 T h e B R IM A R 11A.2 is an indirectly heated double diode triode valve, designed for perform ing simultaneously the functions o f autom atic volume control, detection and amplification. Full-wave or half-wave rectification together with delayed

73b21

Contextual Info: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

STTB806M

Abstract: Diode SMD ED 8A
Contextual Info: r z 7 m S C S - T H O M S O N 7# « ^ m [ i O T 2* S T T B 806M S ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (av 8A V rrm 600V trr (typ) 50ns V f (max) 1.3V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­ TIONS: Snubbing or clamping, demagnetization

R460P

Contextual Info: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . t b / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in

Contextual Info: Ordering number : EN2494 No.2494 SAßYO r /_ S B 8 0 - 0 9 J Sçhottky Barrier Diode Twin Type Cathode Common i 90V, 8A Re c t i f i e r Applications . High frequency rectification (switching regulators, converters, choppers)

70l7gt

Abstract: 6k7g 35z5gt 6k6gt 25L6GT 6q7g 70L7-GT 35L6GT 35z5 12k7gt
Contextual Info: SYLVANIA 6 J7 G T Pen tod e 6K 6G T Pentod e 6K 7G T Pentod e "ek B G T " Triode-H exode 6Q 7G T D ouble D iode-Triode D ouble Diode H eptode 12A8GT 6.3 6.3 6K 7G 6K 8G 6Q7G 6.3 6.3 0.30 LE TUBE 0.30 6A8G 12B 8G T Pen tod e-T riode ~ 8 -T T 9 -E 0.15 12F5G T

Contextual Info: T-1 3mm BLINKING LED LAMP Part Number: L-36BSRD-B Super Bright Red Features Description z T-1 package with rectangular base. The Super Bright Red source color devices are made with z With built-in blinking IC. Gallium Aluminum Arsenide Red Light Emitting Diode.

LNJ218C8ARA

Contextual Info: Approved DEVELOPMENT SPECIFICATION TEMPORARY p/N : LN J218C 8A R A Red Light Emitting Diode A P P L I C A ' ! ' ION Indicators M A T E R I A L GaAlAs O Attached U A B T L N E S O L U T E M A X R I A *1 h I M U M T I N G S C O N D I T I O N In«' Topr Tstg

Contextual Info: Ordering num ber : EN2496 S B 2 0 0 - 0 9 R Schottky B a r r ie r Diode Twin Type Cathode Common 90V, 20A R e c t i f i e r Applications . High frequency rectification (switching regulators, converters, choppers) Features . Low forward voltage (VFmax=0.85V)

Contextual Info: Ordering number : EN2490 SAHYO i I SB No.2490 8 0 - 0 5 J Schottky B a rrie r Diode Twin Type Cathode Common 50V, 8A R e c t i f i e r Applications . High frequency rectification (switching regulators, converters, choppers) Features . Low forward voltage (VFmax=0.55V)

6T8A

Abstract: 6T8 tube
Contextual Info: 6T8A TUNO-SOL s TRIPLE-DIODE M I NI ATU RE :OATEi. 1 T R I ODE TYPE PO T ENT IAL CA T HO D ES HEATER 6.5 VOLT S +50 MA. AC OR DC ANY M OU N T I N G POSI TIO N BOTTOM GLASS 3 U LB V IEW BASING DIAGRA M M I N I AT UR E G LA S S B UT TO N 9 PI N B A SE E9-1 O U T L I N E DRAWING

Contextual Info: ITH08C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5044-1.2 O ctober 1998 T h e IT H 0 8 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r

2SD903

Abstract: C580A VC80
Contextual Info: 2SD903 N P N Triple Diffused Mesa Type Silicon Transistor •V For H orizontal O u tp u t Use o f Color T V Includes a D a m p e r Diode * 7 — r U t :'7 K ¥ ( ^ » \— t — Kf*3 C58 A b so lu te Maximum 3 U ? 9 ' '*<•— * tgj± ZI U 9 9 • X £ "/

TRANSISTOR SMD MARKING CODE 2x

Abstract: TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD 2x t B0702 marking code ff SMD Transistor smd transistor 2x HFA04SD60S IRFP250 SMD-220 TRANSISTOR SMD 2X K
Contextual Info: Bulletin PD-20617 rev. B 07/02 HFA04SD60S Ultrafast, Soft Recovery Diode Features • • • • • • t rr = 38ns IF AV = 4Amp VR = 600V Ultrafast Recovery Time Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Temperature

10EPF12

Abstract: 10ETF 10ETF10 10ETF12 332E-04 DIODE MARKING CODE 623
Contextual Info: Bulletin I2188 rev. B 06/06 QUIETIR Series 10ETF.PbF FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1.33V @ 10A t rr = 80ns VRRM = 1000 - 1200V Description/ Features The 10ETF.PbF fast soft recovery QUIETIR rectifier series has been optimized for combined

10EPF12

Contextual Info: Bulletin I2188 rev. B 06/06 QUIETIR Series 10ETF.PbF FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free "PbF" suffix VF < 1.33V @ 10A t rr = 80ns VRRM = 1000 - 1200V Description/ Features The 10ETF.PbF fast soft recovery QUIETIR rectifier series has been optimized for combined