DIODE T 4302 Search Results

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: 3875081 G E SOLID 0 1E STATE D 19652 Optoelectronic S p e cificatio n s_ HARRI S SEMICOND SECTOR 37E D I 4302271 • HAS 0027114 1 If 4 13 Infrared Emitter F5F1 Gallium Arsenide Infrared — Emitting Diode T he G E Solid S tate F 5 F I is a G allium -A rsenide, infrared em itting diode which

Contextual Info: 3875081 G E SOLID STATE 01E 19826 D Optoelectronic Specifications. T-m-13 HARRIS SEMI COND SECTOR 37E D H 4302271 0027200 1 MHAS Photon Coupled Interrupter Module C N Y 28 T he G E Solid S tate CNY28 is a gallium arsenide infrared em itting diode coupled w ith a silicon p h o to tran sisto r in a plastic housing. T he

Contextual Info: HARRIS SEMICOND SECTOR 37E D 4302571 Ü Ü S V at t . [HAS 2 Optoelectronic Specifications_ T -W I-7 Í M atched Emitter-Detector Pair H23L1 •vu. A B Bi The G E Solid State H23L1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a

Contextual Info: a RHRP6120CC HARRIS S E M I C O N D U C T O R juiy 1996 6A, 1200V Hyperfast Dual Diode Features Description • Hyperfast with Soft R ecovery. <55ns • Operating T em p eratu

Contextual Info: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / •43GE571 0027270 T ■ HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode

Contextual Info: 3875081 G E SO LID 01E STATE 19648 D Optoelectronic Specifications -• -t c q t -t è H A RR IS SEM-ICOND S E C T O R 37E D 43 0 5 27 1 G G 2 7 1 1 0 4 ■ HAS Infrared Emitter FSDl,F5D2,F5D3,F5E1, F5E2,F5E3 Gallium Aluminum Arsenide Infrared — Emitting Diode

RUR30120

Abstract: MOSFET 1200v 30a
Contextual Info: HARRIS S E MI C ON D SECTOR b5E D W t 4302271 7Tì HHAS RUR30120 h a f r r is SE MI C O N D U C TO R M È % èJ È • \J 30A, 1200V Ultrafast Diode February 1993 Features G DM T HI Q Package TO-220AB • Ultrafast with Soft Recovery. <11 Ons

Contextual Info: 3875081 G E SOLID STATE 0 1E 19858 D Optoelectronic Specifications_ T - Í //- S 3 HARRIS SEMICOND SECTOR 37E D I M305571 Photon Coupled Isolator GEPS2001 0057350 ! M IL L IM E T E R S J O T M B Jkr M IN . ; M A X . Ga As Infrared Em itting Diode & NPN Silicon Photo-Transistor

Contextual Info: 3875081 G E SOLID STATE 01E Optoelectronic Specifications 19828 T -4 /-7 3 HARRIS SEMICOND SECTOR 37E D Bi 43Q 2271 OCISVaSO T Photon Coupled Interrupter Module C N Y 2 9 •HAS t T he G E Solid S ta te C N Y29 is a gallium arsenide infrared em itting diode coupled w ith a silicon photo-darlington in a plastic housing.

lt 748 diodes

Contextual Info: HARRIS SEfllCOND SECTOR K£U 4ÜE T> 4302571 OöaS-ail-O- B HAS C&3141 HARRIS High-Voltage Diode Array For Commercial, industrial & Military Applications A u g u s t 1 99 1 Features Description • M a tch e d M on o lith ic C o n stru c tio n - V p for E a c h Dio de

600V 25A Ultrafast Diode

Abstract: IRL 724 N TA09903 RURP3060
Contextual Info: RURP3060 in t e f s il Data Sheet J a n u a r y 200 0 File N u m b e r 2776 . 4 30A, 600V Ultra fast Diode Features The RURP3060 is an ultrafast diode trr < 55ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted,

Contextual Info: 3875081 G E SOLID STATE 01E 19848 D Optoelectronic Specifications_ T - u /j. HARRIS SEMIC0N» SECTOR 37E D 430SS71 G02731Q 1 Photon Coupled Isolator C N Y 4 8 M IL L I M E T E R S SW 80L- Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier

CNY17 Harris

Abstract: CNY17 III
Contextual Info: 3875081 G E S O L ID STATE 01E 19822 Optoelectronic Specifications _ T HARRIS SEMICOND SECTOR 37E D I - m - S 4305271 D0272Û4 4 * H A S Photon Coupled Isolator CN Y17 Ga As Infrared Emitting Diode & npn Silicon Photo - Transistor T h e G E Solid S tate CN Y17 consists o f a gallium arsenide infrared

Contextual Info: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode

Contextual Info: 0 1E 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications — HARRIS SEMICON» SECTOR 37E D B 4302571 19686 0057145 Photon Coupled Isolator H11A1, H11A2, H11A3, HT1A4, H11A5 T W J-S 3 ? *H A S Ga As Infrared Em itting Diode & NPN Silicon Photo-Transistor

Contextual Info: 3875081 G E SOLID STATE 01E 19802 Optoelectronic Sp e c ific atio n s_ H A R R IS SEMICOND S EC T O R 37E D 43G2271 Matched Emitter-Detector Pair H23B1 SYM T he G E Solid State H 23B 1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a silicon,

Contextual Info: 3875081 G E SOLID STATE 01E 19738 Optoelectronic Sp e c ific atio n s_ H A R R IS S EM IC O N D 37E SECTOR D 430S271 DD272G G S 0 c -T - 4 1 -8 7 Photo Coupled Isolator H11J1- H11J5 Ga As Infrared Em itting Diode & Light Activated T riac Driver The GE Solid State HI IJ series consists of a gallium arsenide infrared

Contextual Info: 3875081 G E SOLID STATE 01E Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D • 19874 D -WII HAS 43D2271 00S733b Ô Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs In frare d E m itting Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide,

Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C

MUR3010PT

Abstract: harris 723 CIET MUR3015PT MUR3020PT RURD1510 RURD1515 RURD1520 mur3020
Contextual Info: M UR3010PT M UR3010PT M UR3020PT HARRIS 5bE D • 43G2271 G042404 0 54 15A Ultrafast Dual Diode With Soft Recovery Characteristic HAS M ay 1991 HARRIS RURD1510 R U R D 1515 RURD1520 SEMICOND Features SECTOR facKage 7 ^ .2 3 - 0 7 T 0 - 218 AC TOP VIEW • Ultrafast with Soft Recovery Characteristic

Contextual Info: 3875081 01E G E S O L I D STATE 19820 Optoelectronic S pecifications_ H A R R IS S E fllC O N D SECTOR 37E D • 43Q2571 00272ÖH 0 ■ T- V/- 8 3 Photon Coupled Isolator CNX35, CNX36 G a As Infrared Emitting Diode & N PN Silicon Photo-Transistor

sp720

Abstract: AMO 0210
Contextual Info: mH SP720 a r r is S E M I C O N D U C T O R Electronic Protection Array for ESD and Over-Voltage Protection O cto b e r 1995 Description Features • The SP720 is an array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits.