DIODE SY 400 Search Results

MARKING SY SOT23

Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Contextual Info: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330

BAT45C

Contextual Info: £ÿj SGS-THOMSON BAT 45 SMALL SIGNAL SCHOTTKY DIODE DES CRIPTIO N Metal to silicon junction diode primarly intented for UHF mixers and ultrafast switching applications. A B S O L U T E RATING S limiting values Sy m b o l Param eter V alu e rrm R epetitive Peak R everse Voltage

SY 625

Contextual Info: HSS82-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=200V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les ea sy

diode sy 715

Contextual Info: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F

Contextual Info: HSS83-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=250V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les e a sy

VUB145-16NOXT

Contextual Info: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC

Contextual Info: VUB 116-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 116 A VF = 2.76 V IF SM = 700 A IF SM = 200 A IGBT V C E S= 1200 V I C 8 0 VC

1BH62

Abstract: DIODE 1BH62 IS1835 1JH62 1DH62 1GH62 1JH62 3-3b1a DIODE 39c 1S1834 1S1835
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C FAST RECOVERY DIODE 02240 »^^0^7250 0002540 S Unit in I S 1835 600V Bin 1A MAXIMUM RATING C H A R A C T E R IST IC SY M BO L 400 1S1834 R epetitiv e P eak R e v e rse V oltage 1S1835 V Vrrm 600 1S1834 R e v e r s e V oltage

200JH21

Abstract: toshiba 3-60B1A
Contextual Info: -_ 9097250 TOSHIBA 39C 02245 C D IS C R E T E / O P T O 0 7"- 0 3 - 2 3 FAST RECOVERY DIODE 0 SHIBA { D I S C R E T E / O P T 0> 200JH21 ln DËJ'iD^aSG 0002545 4 Unit in 600V 200A MAXIMUM RATINGS CHARACTERISTIC SY M B O L RATING UN IT Repetitive P eak R everse Voltage

B159 diode

Abstract: 6DI50B-050 le50a 6di50b B-159 M606
Contextual Info: 6DI50B-050 50A ✓ < 7 ! t ± ' N r 7 — t ' ^ L — -/u : Outline Drawings - POWER TRANSISTOR MODULE •¡tfjft : F e a tu re s 1 7 ÿ —sft-f y 'sy »hFE*''iëj^ =t — KF*3 j Including Free W heeling Diode High D C Current Gain Insulated Type Iffliê : A p p lic a tio n s

sy 320 diode

Contextual Info: P h ilip s Se m ico n d u cto rs P re lim in sry specification Schottky barrier diodes FEA T U R ES BAT54W series Q U IC K R E F E R EN C E DATA • Ultra-fast switching speed • Low forward voltage SY M B O L PA RAM ET ER CO N DITIO N S UNIT MAX. Per diode

15FWJ11

Abstract: 15GWJ11 30GWJ11 30FWJ11 AC23A
Contextual Info: 9097250 TOSHIBA 39C CDI S C R E T E / O P T O 02257 7^ 03-^ 7 SCHOTTKY BARRIER DIODE Unit in nm 15GWJ11 40V 15A MAXIMUM RATINGS C H A R A C T E R IS T IC SY M B O L Repetitive Peak 15FWJ11 R everse Voltage 15GWJ11 RATING UNIT 30 V rrm 40 Average F o rw a rd C u rrent

toshiba 6jg11

Abstract: 12GH11 12JG11 12JH11 6JG11 12GG11 IF-10A 6DG11 6GG11 12BG11
Contextual Info: 9097250 1ñ dË TOSHIBA 39C DI S C R E T E /O P T O J t D^SSD 0 0 0 5 2 4 3 D T - O J - / / FAST RECOVERY DIODE | ~ - 02243 600V 6A 6 JG 1 1 M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L 100 200 6DG11 Repetitive Peak R everse Voltage

ir20d

Abstract: 3DH61 3JH61 1S2711 3GH61 3BH61
Contextual Info: 9097250 TOSHIBA <D IS C R E T E / O P T O _ FAST RECOVERY DIODE 39C 0 2 2 4 2 DE I T G T T H S D TOSHIBA -CDISCRETE/0PT0} 1500V 1.5A 1S2711 O T ~ 6 3_-' * DDDE54S T Unit in am M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L U N IT R A T IN G

30JG11

Abstract: 30GG11 30BG11 30DG11 30FG11
Contextual Info: 9 0 9 7 2 50 T O S H I B A CDI S C R E T E i O P T O > 39C FAST RECOVERY DIODE 02244 D d W ? DE I^D-iVESG 0 DD2244 2 | Unit in ui 600V 30A 3 Q JS Î1 ,Max -f* 20- M A X IM U M RATINGS C H A R A C T E R IS T IC SY M B O L RATING 30BG11 30DG11 R epetiiïïe Peak

JESD22-A114

Abstract: JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9600D PCA9600DP
Contextual Info: PCA9600 Dual bidirectional bus buffer Rev. 04 — 11 November 2009 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a

JESD22-A114

Abstract: JESD78 P82B96 PCA82C250 PCA9600 PCA9601 AN10658
Contextual Info: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a

PCA9601

Abstract: AN10658 diode sy 104 JESD22-A114 JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9601DP
Contextual Info: PCA9601 Dual bidirectional bus buffer Rev. 01 — 28 May 2010 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a

Contextual Info: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a

P82B96

Abstract: JESD22-A114 JESD78 PCA82C250 PCA9511A PCA9600 PCA9600D PCA9600DP AN10658
Contextual Info: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a

Contextual Info: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a

BUK454-400B

Abstract: T0220AB PPD-25
Contextual Info: N AMER b^E PHILIPS/DISCRETE D • hhS3^3l □□3Db2D BUK454-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SM PS , motor control, welding,

Schottky Rectifier 250V

Abstract: diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v
Contextual Info: Table 1 Symbols Z FW GW A B C D E F G H J K L M N P Q R Repetitive reverse voltage 25 V 30 V 10V 50 V 100 V 150 V 200V 250V 300V 400V 500V 600V 700V 800V 900V 1000V 1100V 1200 V 1300 V Repetitive reverse voltage 1400V 1500V 1600 V 1700V 1800 V 1900V 2000V

diode sy 160

Abstract: diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P
Contextual Info: 5mm FLANGE BASED LED LAMPS Features BLF051 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.