DIODE SY 223 Search Results

BAT45C

Contextual Info: £ÿj SGS-THOMSON BAT 45 SMALL SIGNAL SCHOTTKY DIODE DES CRIPTIO N Metal to silicon junction diode primarly intented for UHF mixers and ultrafast switching applications. A B S O L U T E RATING S limiting values Sy m b o l Param eter V alu e rrm R epetitive Peak R everse Voltage

IS1832

Abstract: diode 1800v 0.5a TFR1L
Contextual Info: 9 0 9 7 2 50 TOSHIBA 3T DE I TDTTSSD 000223e] T TFR1T 39C 0 2239 DISCRETE/OPTO 0 T 1 0 3 “// FAST RECOVERY DIODE _ Unit in wn 1500V 0.5A MAXIMUM RATINGS C H A R A C T E R IS T IC TFR 1L TFR1N Repetitive Peak R everse Voltage TFR1Q TFR1T Average F orw ard C urrent

TS01 DIODE

Abstract: 2232 R 012 S FJ CHEMICALS diode sy 200
Contextual Info: TLP270D TOSHIBA TENTATIVE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET /PHOTO-TRANSISTOR t• i p ? 7m n nmmr m M O BILE/N O TE PCs U n it in mm PDAs M ULTIM EDIA TVs 15141312 1110 M OD EM S TLP270D has many multi-functions in D A A circuits for modems,

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UTD410 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ 1 DESCRI PT I ON SOT-223 The UTD410 can provide excellent RDS ON and low gate charge by using advanced trench technology. This UTD410 is suitable for using as a load switch or in PWM applications.

Contextual Info: SUPPLY VOLTAGE MONITOR ZIA7033 ISSUE 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The ZIA7033 is a three terminal under voltage monitor circuit for use in m icroprocessor systems. The threshold voltage of the device has been set to 3.1 volts making it ideal for 3.3

tig IGBT module

Abstract: tig ac inverter circuit CD drive schematic
Contextual Info: 2-Pack IGBT 1200 V 150 A FUJI IGBT MODULE F series Outline Drawings • Features • Low Saturation Voltage • V o lta g e D rive • Variety of Power Capacity Series ■ Applications • Inverter for Motor Drive • AC and DC Servo Drive Amplifier • U n in te rru p tib le P o w e r S u p p ly

DXT170-71-1

Abstract: SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171
Contextual Info: 3 Port Solenoid Valve Rubber Seal Series SYJ300/500/700 SY Low power consumption: 0.5W Without light (Current draw: 21mA at 24V DC) Completely interchangeable with the previous series VJ300/500/700 and VZ300/500. Series VZ SYJ300 VJ300 — SYJ500 VJ500 VZ300

mikroelektronik ddr

Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Contextual Info: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn­ daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden

SYJ3120-5G-M3-Q

Abstract: DXT170-71-1 SYJ3000-14-6 VJ7000 VJ3000-13-1 SYJ3000-21-2A-Q SYJ3000-21-1A-Q diode sy 166 SYJ5143-5LOU-Q SY100-30-4A
Contextual Info: 4, 5 Port Solenoid Valve Rubber Seal Series SYJ3000/5000/7000 SV Low power consumption: 0.5W Without light SY (Current draw: 21mA at 24V DC) SYJ Bright colour tone and state of the art design SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD Completely interchangeable with

SMC - SY5120

Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Contextual Info: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

LTL22

Contextual Info: TAIWAN LITON ELECTRONIC L I T E M HTE D • ôôBSb^S 0003520 151 ■ TLIT 3mm CYLINDRICAL LED LAMPS E L T L — 2201A L LTL-2211A L L T L — 2221AL L T L - 2231A L L T L - 2251A L Y E L L O W L T L — 2271 A L A M B E R L T L — 2291AL O R A N G E RED

IC 74ALS164

Contextual Info: TOSHIBA TC74VHC164F/FN/FS/FT T O SH IB A C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC164F, TC74VHC164FN, TC74VHC164FS, TC74VHC164FT 8 - BIT SHIFT REGISTER S-IN, P -O U T The TC74VHC164 is an advanced high speed CMOS 8 - BIT SERIAL-IN PARALLEL-OUT SHIFT REGISTER fabricated

SG323K

Abstract: 5 VOLT 3 AMP regulator SG-123 SG323 center tapped transformer SG123A SG323A
Contextual Info: Siucon fienepaL SG123AI SG223AI SG323A SG1231SG223 / SG323 11NI f A R I N T H , R A T I O I K< I l l s 5 VOLT— 3-AMP POSITIVE REGULATOR DESCRIPTION FEATURES The SG123A family is an improved version of the popular LM123 5 Volt, 3 Amp Regulator line. These new devices offer maximum initial out­

Contextual Info: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor

smc vt301

Abstract: diode P033 breather valve VT317V solenoid direction control valve connection 220v ac 220v ac solenoid valve L146 DXT060-51-13 varister symbol VT307E
Contextual Info: 3 Port Direct Operated Poppet Rubber Seal Series VT307 Model Large Flow Capacity, yet Compact Size. Dimensions W X H X D •·····30 X 54.5 X 33 VT307······Nl/min 206.02 or more, 1/4 Low Power Consumption VT/VO307······4.8W DC/Standard Style

Contextual Info: 3. Equivalent C ircuit 2 . Equivalent C ircu it of Module +o .co- -OE Current Control Circuit -Vh >^— o -a •O- 4 . Absolute Maximus Ratings whatsoever for the use of any in any way third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.

Contextual Info: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTERSIL CD54/74FCT373, CD54/74FCT373AT CD54/74FCT533, CD54/74FCT533AT July 1990 DO-D 1 -D 2 -D 3 -D 4 -D 5 -D 6 -D 7 - - 373 533 00 Q1 02 03 04 05

GVVZS3000-21A-2

Abstract: VVQ2000-51A-C10 SS5V1-W16SA1WD-06B-C6 EX500-AC000-S diode catalogue AS3000 SS5V1-16 GVVZS3000-21A-4 IEC529 turck 8 pin m12 connector
Contextual Info: 5 Port Solenoid Valve Series SV SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 1.1-1 New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides

380N8

Abstract: 380N-8
Contextual Info: SUPPLY VOLTAGE MONITOR ZSM380 ISSU E 1 - APRIL 1996 DEVICE DESCRIPTION _ FEATURES The Z S M 3 8 0 is a three term inal under v o lt a g e m o n it o r c ir c u it fo r u s e in m ic ro p ro c e sso r sy ste m s. The threshold voltage of the device has been set to 3.8 volts

Contextual Info: SUPPLY VOLTAGE MONITOR ZSM530 ISSU E 1 - NOVEMBER 1995 DEVICE DESCRIPTION FEATURES T he Z S M 5 3 0 is a three term inal under v o lt a g e m o n it o r c ir c u it fo r u s e in m ic ro p ro c e sso r sy ste m s. The th re sho ld voltage of the device ha s been set to 4,3 volts

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

A527

Abstract: ESAD83M-006 A526
Contextual Info: ESAD83M-006I30A t - F SCHOTTKY BARRIER DIODE Features Insulated package by fu lly m o ld in g • ffeVF Low Vp 7JZ-Y1f * C onnection D iagram S up er high speed s w itc h in g . H igh reliability by pla n e r design. • rV i "A p p lic a tio n s D