DIODE SY 170 Search Results

Contextual Info: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES I SSUE 2 -M A R CH 1995_ 2 _ DIODE PIN CONNECTION 1 t PARTMARKING DETAIL ZC2800E - E6 ZC2811E-E8 ZC5800E-E9 3 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Power Dissipation at Tamb- 25°C

"DIODE" SY 171

Abstract: THZ3R3A05 thz010a10 THZ6R0A10 THZ013A05
Contextual Info: ALLEGRO M IC RO SY ST E MS 8514019 S PR A G U E . INC ^3 D • GS0433Ô SEMICONDS/ IC S 00D3bED 93D R ■ 03620 _ ALGR T '- 't /"* DIODE CHIPS ‘THZ’ Series ‘A ’ Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C @ZT mA Max. (m-A)

Schottky Rectifier 250V

Abstract: diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v
Contextual Info: Table 1 Symbols Z FW GW A B C D E F G H J K L M N P Q R Repetitive reverse voltage 25 V 30 V 10V 50 V 100 V 150 V 200V 250V 300V 400V 500V 600V 700V 800V 900V 1000V 1100V 1200 V 1300 V Repetitive reverse voltage 1400V 1500V 1600 V 1700V 1800 V 1900V 2000V

diode sy 170

Abstract: diode sy-170 diode sy 170/10 diode sy 170/2 L7676CSEC L7676CSURC L7676CSYC diode sy 170/20
Contextual Info: 7.6mm x7.6mm SUPER FLUX Kingbright L7676CSEC L7676SURC L7676CSYC Package Dimensions Features !SUPER FLUX OUTPUT. !DESIGN FOR HIGH CURRENT OPERATION. !OUTSTANDING MATERIAL EFFICIENCY. !RELIABLE AND RUGGED. Description The Super Bright Orange source color devices are made

ADV7120

Contextual Info: ANALOG DEVICES FEATURES 80 MHz Pipelined Operation Triple 8-Bit D/A Converters RS-343A/RS-170 Compatible Outputs TTL Compatible Inputs + 5 V CMOS Monolithic Construction 40-Pin DIP or 44-Pin PLCC Package Power Dissipation: 400 mW CMOS 80 MHz, Triple 8-Bit Video DAC

AOV453

Abstract: "DIODE" SY 171 1 g
Contextual Info: □ ANALOG DEVICES CMOS 66 MHz Monolithic 25 6x24 _ Color Palette RAM-DAC FEATURES 66MHz Pipelined Operation Triple 8-Bit D/A Converters 256x24 Color Palette RAM 3x24 Overlay Registers RS-343A/RS-170 Compatible Outputs +5V CMOS Monolithic Construction

diode sy 200

Abstract: diode sy 170 diode sy 400 L-7676CSEC
Contextual Info: 7.6mm x7.6mm SUPER FLUX Kingbright L-7676CSEC L-7676SURC L-7676CSEC-E L-7676SURC-E L-7676CSYC Package Dimensions Features lSUPER FLUX OUTPUT. lDESIGN FOR HIGH CURRENT OPERATION. lOUTSTANDING MATERIAL EFFICIENCY. lRELIABLE AND RUGGED. Description The Super Bright Orange source color devices are made

Contextual Info: WPS-242717-02 2400 to 2700 MHz Linear Amplifier Preliminary Data Sheet June 2006 Features: • 45 dBm IP3 • 13 dB Gain • +28.0 dBm P1dB • Single Positive Bias • Leadless Surface Mount Package • EVM < 1.0% at 20 dBm MP S- 242 7 1702 Description: The WPS-242717-02 is a low cost high linearity modular amplifier designed to meet the ultra-linear transmitter driver

Contextual Info: SCHOTTKY DIODE ARRAY SDA12 ISSU E 1 -A U G U S T 1996 DEVICE DESCRIPTION FEATURES The SD A 12 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise • Repetitive peak forward current - 200mA

diode sy 170

Abstract: diode sy-170
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. Tne device is Intended for use In

ms10 diode

Contextual Info: Rectifier Diode v RSM Type V VRRM V 900 1300 1700 800 1200 1600 DSI 45-08A DSI 45-12A DSI 45-16A RRM IT \ c = 800-1600 V TO-247 AD ISOPLUS 247 Version A Version AR DSI 45-16AR C TAB TAB A = Anode, C = Cathode Features Symbol Test Conditions ^F(AV)M Tc

Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2h QQb43.31 432 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device Is Intended for use In

DXT170-71-1

Abstract: DXT170 diode sy 164 SY100-68-A-20 SY114-5LOz diode sy 170 solenoid valve 24v SY Series SY100 VJ100-6-8
Contextual Info: 3 Port Solenoid Valve Rubber Seal Series SY100 Low power consumption: 0.5W Standard, Without light (Current draw: 21mA at 24V DC) SY SYJ ∗Large flow capacity style:0.75W (Current draw: 31mA at 24V DC) VK Body width: 10mm VZ 7.85 Nl/min (Standard style)

Contextual Info: ANALOG DEVICES RGB to NTSC/PAL Encoder AD724 from a single + 5 V supply. No external delay lines or filters are required. T h e A D 724 may be powered down when not in use. FEATURES Low Cost, Integrated Solution +5 V Operation Accepts FSC Clock or Crystal, or 4FSC Clock

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

BT453KP66

Abstract: BT453KPJ
Contextual Info: CMOS 66MHz Monolithic 256x24 Color Palette RAM-DAC DEC 2 6 'S31' ANALjOG D EVICES FEATURES 66MHz Pipelined Operation Triple 8-Bit D/A Converters 256x24 Color Palette RA M 3x24 Overlay Registers RS-343A/RS-170 Compatible Outputs + 5V C M O S Monolithic Construction

Contextual Info: T-1 3/4 5mm ROUND LED LAMP L-1703SURC-E HYPER RED Features Description !OUTSTANDING MATERIAL EFFICIENCY. The Hyper Red source color devices are made !RELIABLE AND RUGGED. with DH InGaAlP on GaAs substrate Light Emitting !I.C. COMPATIBLE. Diode. Package Dimensions

SCHEMATIC ATI graphics card

Abstract: schematic diagram video composite to vga schematic diagram vga to svideo RGB signal converting to vga standard 15 pin vga connector schematic diagram vga to composite 3A11 AD724 AD8073 ad724jr
Contextual Info: ANALOG ► DEVICES RGB to NTSC/PAL Encoder AD724 from a single + 5 V supply. No external delay lines or filters are required. T he A D 724 may be powered down when not in use. FEATURES L o w C ost, In te g ra te d S o lu tio n +5 V O p e ra tio n Accepts FSC Clock or C rystal, o r 4FSC Clock

Halbleiterbauelemente DDR

Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
Contextual Info: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.

Contextual Info: I Actuator and Actuator-LED Terminal Blocks for Use with a Base Module 170 for Actuators with Ground Earth / Shield (Screen) Connection 0.08 - 1.5 m m 2 65 V/1.5 kV/3 O 6A AW G 28 - 16 Terminal block width 5 mm / 0.197 in 4_^ 9 - 1 0 mm / 0.37 in O

Contextual Info: T-1 3/4 5mm HYPER RED LED LAMP L-1703SURC HYPER RED L-1703SURC-E HYPER RED Features ! HYPER Description BRIGHTNESS. ! OUTSTANDING ! RELIABLE ! I.C. The Hyper Red source color devices are made with DH MATERIAL EFFICIENCY. AND RUGGED. InGaAlP on GaAs substrate Light Emitting Diode.

diode sy 171 10

Abstract: diode sy 170/10
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,

TB62004P

Abstract: TB62004F TB62004
Contextual Info: SILICON MONOLITHIC Bi-CMOS INTEGRATED CIRCUIT TB62003P/F/FW/TB62004P/F/FW - TB62006P/F/FWJB62007P/F/FW TB62008P/F/FWJB62009P/F/FW 8CH D M O S TRANSISTOR ARRAY WITH GATE TB62003P, TB62003F, TB62003FW TB62003P, TB62004P TB62006P, T862007P TB62008P, TB62009P

Contextual Info: EHXYS_ Rectifier Diode Avalanche Diodes ~ '~ 3 J vQDia = 1200 - 1800 v iF RMS = 7 A HRM I - 9 1 ‘ f (AV)M ~ v RSM V 1300 1700 1900 V » *, v rrM V V 1300 1750 1950 1200 1600 1800 A v a la n c h e Types D S 1 -1 2 D D S A 1 -1 2 D D S A 1 -1 6 D