DIODE SY 160 Search Results

VUB145-16NOXT

Contextual Info: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC

Contextual Info: VUB 116-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 116 A VF = 2.76 V IF SM = 700 A IF SM = 200 A IGBT V C E S= 1200 V I C 8 0 VC

Contextual Info: s q . i .p . Square In-line Package Input/Output In-line Package Bridge Diode • O U TL IN E DIM ENSIONS S3WBD 600V 2.3A U nit • mm W eight • 5.5g ■ RATINGS Absolute Maximum Ratings i i a I t em Sy mb o l V M axim um R e v e rs e V o lta g e m tiW M

Schottky Rectifier 250V

Abstract: diode 20000v NX DIODE schottky diode 800V diode 50000v Schottky diode high reverse voltage gw diode diode 10000v diode schottky 900v
Contextual Info: Table 1 Symbols Z FW GW A B C D E F G H J K L M N P Q R Repetitive reverse voltage 25 V 30 V 10V 50 V 100 V 150 V 200V 250V 300V 400V 500V 600V 700V 800V 900V 1000V 1100V 1200 V 1300 V Repetitive reverse voltage 1400V 1500V 1600 V 1700V 1800 V 1900V 2000V

diode sy 160

Abstract: diode sy 400 MG 12v diode Diode SY 250 BLF051MGC-12V-P BLF051MGC-24V-P BLF051MGC-6V-P BLF051SYC-12V-P BLF051SYC-24V-P BLF051SYC-6V-P
Contextual Info: 5mm FLANGE BASED LED LAMPS Features BLF051 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 400

Abstract: diode sy 160 diode sy-250 BLF052MGC-12V-P BLF052MGC-24V-P BLF052MGC-6V-P BLF052SYC-12V-P BLF052SYC-24V-P BLF052SYC-6V-P MG 12v diode
Contextual Info: 5mm FLANGE BASED LED LAMPS Features BLF052 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 160

Abstract: diode sy Ic mega 16 BLB101SYC-12V-P BLB101SYC-24V-P BLB101SYC-6V-P BLB101MGC-12V-P BLB101MGC-24V-P BLB101MGC-6V-P
Contextual Info: 10mm BAYONET BASED LED LAMPS Features BLB101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 160

Abstract: BLS101 BLS101MGC-12V-P BLS101MGC-24V-P BLS101MGC-6V-P BLS101SYC-12V-P BLS101SYC-24V-P BLS101SYC-6V-P
Contextual Info: 10mm SCREW BASED LED LAMPS Features BLS101 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

sy 320 diode

Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Contextual Info: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren

diode sy 160

Abstract: BLB102SYC-24V-P BLB102MGC-12V-P BLB102MGC-24V-P BLB102MGC-6V-P BLB102SYC-12V-P BLB102SYC-6V-P
Contextual Info: 10mm BAYONET BASED LED LAMPS Features BLB102 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. Package Dimensions zLONG LIFE. zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diode sy 400

Abstract: BLF041MGC-12V-P BLF041MGC-24V-P BLF041MGC-6V-P BLF041SYC-12V-P BLF041SYC-24V-P BLF041SYC-6V-P
Contextual Info: 4mm FLANGE BASED LED LAMPS Features BLF041 SERIES zBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. zLONG LIFE. Package Dimensions zLOW CURRENT, POWER SAVINGS. zLOW MAINTENANCE. zDIFFERENT COLOR AVAILABLE. zSOLID STATE, HIGH VIBRATION RESISTANT.

diodes SY 200

Abstract: diode sy 160
Contextual Info: Philips Semiconductors Product specification Rectifier diodes BYV72F series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, high efficiency, dual, rectifier diodes in a full pack,

JESD22-A114

Abstract: JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9600D PCA9600DP
Contextual Info: PCA9600 Dual bidirectional bus buffer Rev. 04 — 11 November 2009 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a

Contextual Info: □IXYS MUBW 15-12 A7 Advanced Technical Information Converter - Brake - Inverter Module cbi2 21 D11 D13 £ 2Ï 1 22 D15 1£ 2 3 >""""^1 1 D14 D12 k 1£ 2Ï D16 23 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600V *DAVM = 36 A lC QM = 300

JESD22-A114

Abstract: JESD78 P82B96 PCA82C250 PCA9600 PCA9601 AN10658
Contextual Info: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a

PCA9601

Abstract: AN10658 diode sy 104 JESD22-A114 JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9601DP
Contextual Info: PCA9601 Dual bidirectional bus buffer Rev. 01 — 28 May 2010 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a

Contextual Info: Philips Semiconductors Product specification Rectifier diodes . BYV72E series ultrafast, GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency rugged dual rectifier diodes in a

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMPS Features KPH-1608EC HIGH EFFICIENCY RED KPH-1608SGC SUPER BRIGHT GREEN KPH-1608SGW SUPER BRIGHT GREEN KPH-1608YC YELLOW Description !1.6mmx0.8mm SMT LED,0.65mm THICKNESS. The High Efficiency Red source color devices are ! LOW POWER CONSUMPTION.

P82B96

Abstract: JESD22-A114 JESD78 PCA82C250 PCA9511A PCA9600 PCA9600D PCA9600DP AN10658
Contextual Info: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMPS KPH-1608EC HIGH EFFICIENCY RED KPH-1608SGC SUPER BRIGHT GREEN KPH-1608SGW SUPER BRIGHT GREEN KPH-1608YC YELLOW Features Description !1.6mmx0.8mm SMT LED,0.65mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION.

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMPS KP-1608E HIGH EFFICIENCY RED KP-1608SGC SUPER BRIGHT GREEN KP-1608YC YELLOW Features Description !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. The High Efficiency Red source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium

BUK452-100B

Abstract: BUK452-100A T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b DDbHOBl SSI « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

td62308

Contextual Info: SILICON MONOLITHIC TD62308APA BIPO LAR DIGITAL INTEGRATED CIRCUIT 4CH LOW INPUT ACTIVE HIGH-CURRENT DARLINGTON SINK DRIVER The TD62308APA is non-inverting transistor array which is comprised of four NPN darlington output stages and PNP input stages. This device is low level input active driver and is suitable

1608C

Contextual Info: BACK LIGHT GLP003/1608CGCK Features l LOW Description POWER REQUIREMENTS. l LARGE AREA, UNIFORM, BRIGHT LIGHT EMITTING SURFACE. l EASY l LOW GREEN The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode. FOR INSTALLATION.