DIODE SOD523 Search Results

BAP51-02

Abstract: smd diode S4 diode S4 05 AS 15 f
Contextual Info: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79

DIODE S4 74

Abstract: BAP50 BAP50-02 diode DB 3 C
Contextual Info: General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE

diode DB 3 C

Abstract: BAP50 BAP50-02
Contextual Info: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79

diode S4 05

Abstract: smd diode S4 diode smd JS 8 BAP51-02
Contextual Info: General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE

diode BY 028

Abstract: 631 DIODE SMD SMD Diode 631 SMD Switching diode SOD323 DIODE 33 25 SWITCHING DIODE ny smd transistor SOD-123 CMOD2004 BY 225 diode
Contextual Info: New Product Announcement Sample Devices Reduce your board space requirements with available Ultramini upon request. TM SOD-523 Actual Size Available technologies include: Switching Diode Schottky Diode High Voltage Switching Diode Ultra Low Leakage Switching Diode

BAP51-02

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PESD5V0S1BB Low capacitance bi-directional ESD protection diode in SOD523 package Product specification 2004 Mar 04 Philips Semiconductors Product specification Low capacitance bi-directional ESD protection diode in SOD523 package

DIODE CHIP

Contextual Info: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters, or by a three element

diode smd marking code 76

Abstract: s4 69 diode smd BA892 BP317 DIODE marking S4 45 diode 1407 str f 6707 smd diode S4 69 str 6707 smd diode 1407
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BA892 Band-switching diode Preliminary specification File under Discrete Semiconductors, SC01 1998 May 08 Philips Semiconductors Preliminary specification Band-switching diode BA892
 FEATURES PINNING SOD523 • Small plastic SMD package

BB145B

Abstract: c4 smd marking code DIODE BP marking 8C marking code 4 SC-79 diode marking 79 diode SMD MARKING CODE ka2
Contextual Info: Philips Semiconductors Product specification Low-voltage variable capacitance diode FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145B is a planar technology variable capacitance diode in a SOD523 SC-79 package. • C4: 2.75 pF; ratio: 2.4

bb179

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BB179 Preliminary DIODE UHF VARIABLE CAPACITANCE DIODE „ DESCRIPTION The UTC BB179 is a planar technology variable capacitance diode providing the designers excellent matching performance, low series resistance and great linearity.

1N4148WT

Abstract: 1N4148WT RoHS 1N914BWT 1N4448WT 914W
Contextual Info: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode • • • • • • • Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device under 0.70mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1

Contextual Info: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features • • • • • • • Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device Under 0.70mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1

LBAS516T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology and encapsulated in the SOD523 SC79 SMD plastic package. LBAS516T1G S-LBAS516T1G FEATURES • Ultra small plastic SMD package

marking zk TVS

Abstract: Signal Path designer Union Semiconductor
Contextual Info: UM5060 Bidirectional Single Line TVS Protection Diode UM5060 SOD523 General Description The UM5060 TVS protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional

SOD523 land pattern

Abstract: Signal Path designer Union Semiconductor
Contextual Info: UM5075 Single Line ESD Protection Diode Array UM5075 SOD523 General Description The UM5075 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional

um505

Abstract: Signal Path designer Union Semiconductor
Contextual Info: UM5055 Single Line ESD Protection Diode Array UM5055 SOD523 General Description The UM5055 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance

Contextual Info: UM5075 Single Line ESD Protection Diode Array UM5075 SOD523 General Description The UM5075 ESD protection diode is designed to replace multilayer varistors MLVs in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional

marking code k1

Abstract: BAP51-02 smd marking KM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance

100MHZ

Abstract: marking code TS
Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.

100MHZ

Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.