DIODE SMD MARKING BBF Search Results

1SV70

Abstract: MARKING CODE SMD IC g1 cmpak6 SMD MARKING CODE hitachi HITACHI RF EDITION cmpak6 marking Hitachi DSA0076 TBB1001
Contextual Info: TBB1001 Twin Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-986E Z 6th. Edition Dec. 2000 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

ADE-208-1607B

Abstract: 1607B 1SV70 TBB1010 TBB1010KMTL-E
Contextual Info: TBB1010 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G0844-0400 Previous ADE-208-1607B Rev.4.00 Aug.10.2005 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x 2

MARKING CODE SMD IC g1

Abstract: SMD MARKING CODE sg 1SV70 TBB1005 SMD MARKING CODE hitachi DSA003645
Contextual Info: TBB1005 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-989F Z Preliminary 7th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

SMD MARKING CODE hitachi

Abstract: 1SV70 TBB1004 HITACHI RF EDITION marking code g1s MARKING CODE SMD IC g1 DSA003645 marking code g2s
Contextual Info: TBB1004 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-988H Z 9th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

FET2

Abstract: SMD MARKING CODE sg 1SV70 TBB1002 SMD MARKING CODE hitachi DSA003645
Contextual Info: TBB1002 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-987F Z 7th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

SMD MARKING CODE hitachi

Abstract: Hitachi DSA00280
Contextual Info: TBB1008 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-1599 Z Rev.0 Jun. 2002 Features • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. • Suitable for World Standard Tuner RF amplifier.

Contextual Info: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

1SV70

Abstract: TBB1005 TBB1005EMTL-E K3082
Contextual Info: TBB1005 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0843-0800 Previous ADE-208-989F Rev.8.00 Aug.10.2005 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

Contextual Info: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

smd diode marking BM 06

Abstract: smd code marking BM 1SV70 TBB1002 TBB1002BMTL-E
Contextual Info: TBB1002 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0841-0800 Previous ADE-208-987F Rev.8.00 Aug.10.2005 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1004 R07DS0314EJ1200 Previous: REJ03G0842-1100 Rev.12.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet TBB1002 R07DS0313EJ1000 Previous: REJ03G0841-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

st smd diode marking code BUH

Abstract: diode smd marking BUF diode smd marking BBE diode smd marking Bva smd diode order marking code stmicroelectronics STMicroelectronics smd marking code STMicroelectronics smd DIODE marking code marking bbz diode smd marking BBf diode smd marking BUA
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

st smd diode marking code BUH

Abstract: diode smd marking BUF diode smd marking Bva diode smd marking BBE diode smd marking BUj diode smd marking BUE st smd diode marking code BUZ diode smd marking BBf diode smd marking "BUF" diode code BUH
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

st smd diode marking code BUH

Abstract: diode smd marking BUF smd diode order marking code stmicroelectronics STMicroelectronics smd marking code marking bbz STMicroelectronics smd DIODE marking code diode SMBJ170A-TR st smd diode marking code BUZ diode smd marking BUE diode smd marking BBE
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE

diode smd marking BUF

Abstract: smd diode code buh diode smd marking "BBE" diode smd marking BUE diode smd marking BBf smd code buz smb smd code buh diode smd marking "BUF" diode smd marking BUA diode smd marking "BUE"
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION The SMBJ series are TRANSILTM diodes designed

bbc ds diodes DS 1,8

Abstract: diode smd marking BUE bbc ds diodes DS20-800 B SMBJ8.5CA
Contextual Info: S G S - ÏH O M S O N S M B J 5 .0 A -T R ,C A -T R [ M r e * S S M B J 1 8 8 A -T R ,C A -T R œ @ [ E L [ iO TRANS IL FEATURES • PEAK PULSE POWER: 600 W 10/1 OOO^s ■ STAND OFF VOLTAGE RANGE : From 5V to 188V. ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR

diode smd marking BUF

Abstract: marking CODE R SMD DIODE SMB J 36 CA diode smd marking BUE diode smd marking BBE diode smd marking "BUF" smd diode code buh diode smd marking BUj diode smd marking Bva SMD CODE BUQ BUL 510
Contextual Info: SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION The SMBJ series are TRANSILTM diodesdesigned

1607B

Abstract: SMD MARKING CODE hitachi ADE-208-1607B TBB1010 1SV70
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance