DIODE SMD 1D Search Results

marking code JD SMD

Abstract: smd marking JD mmbd715 smd marking code 3D MMBD706W smd diode je smd marking code je MMBD717W MMBD715W SCHOTTKY MARKING cd S0D-323
Contextual Info: Formosa MS SMD Schottky Barrier Diode MMBD706W / 715W / 717W List List. 1 Package outline. 2

Zener diode smd marking 5j

Abstract: MM5Z3V9 smd zener diode code 5F
Contextual Info: Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V List List. 1 Package outline. 2 Features. 2

Contextual Info: Formosa MS SMD Zener Diode BZT52S-F Series List List. 1 Package outline. 2 Features. 2

MM5Z3V9

Contextual Info: Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V List List. 1 Package outline. 2 Features. 2

Contextual Info: Formosa MS SMD Zener Diode BZT52S-F Series List List. 1 Package outline. 2 Features. 2

diode tfk s 220

Abstract: TFK BP 3 TFK 140 TFK S KJ SMD DIODE MARKING
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF10SC4M PyKLl°- ffl 40V m Unit-mm Weight 1.5g (Typ) 10.2 DA Feature a • SMD <SMD • Tj=150°C 1Tj=150°C 1 P rrsm Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use 1Switching Regulator

x25-m

Abstract: MARKING H140 diode b tu 25 c JB SMD MARKING
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S4M U nit-m m W eight 0.326g Typ 40V 3A ® (g)(4) • SMD Feature • SMD • Tj=150lC • Tj=150°C • P r r s m T V ^ V ï ^ iS Ü Œ • P rrsm Rating High lo Rating-Small-RKG MainUse

diode smd JS 8

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5SC4M Unit-mm Weight 0.326g Typ 40V 5A Feature >SMD 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • SMD • Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E Main Use » D C /D C o

X4 DIODE SMD

Abstract: smd diode marking LM smd diode marking B3 smd zm diode
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20SC4M P y K L l°- ffl 40V m U n it-m m W e ig h t 1.5g (T y p ) 10.2 DA Feature a <SMD • SMD • Tj= 150°C 1Tj=150°C 1 P rrs m Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use

D20S30

Abstract: SDP20S30 Q67040-S4374 Q67040-S4419 S20S30 SDB20S30 smd diode marking code UJ diode smd marking code 435 300V Schottky Diode smd
Contextual Info: SDP20S30 SDB20S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on Qc 23 IF 2x10 P-TO220-3.SMD the switching behavior

smd diode marking U10

Abstract: Diode marking TY smd diode marking B3 smd diode HB
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30SC4M u^hàLÌ°- M 40V m Feature a <SMD • Tj=150°C 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • P rrsm DC/D C 4.7 Main Use it 1Switching Regulator 1DC/DC Converter 1Home Appliance, Game, Office Automation

diode pj 77

Abstract: SMD PJ 77 pj 86 diode smd diode pj pj SMD diode smd diode "marking 77" pj 50 diode smd diode smd pj smd diode marking 77
Contextual Info: Schottky Barrier Diode Twin Diode m tm OUTLINE Package : E-pack DE5SC3ML Unit-mm Weight 0.326g Typ 30V 5A Feature • SMD • Tj=150°C •< S V f=0.45V 1Tj=150°C 1 Low Vf=0.45V • P r r s m 7 7A ' 5 > ^ i S IÎE 1 P rrsm Rating »SMD 1 High lo Rating -Small-PKG

D1FS4A

Contextual Info: Schottky Barrier Diode Single Diode mtm D1FS4A OUTLINE 40V 1.5A Feature • /JvSUSMD • Tj=150°C • f î V f = 0.45 V • P r r s m 7 7A ' 5 > ^ i SSE ' Small SMD 1Tj=150°C 1 Low Vf=0.45V 1 P rrsm Rating Main Use • 7 ,-f 'DC/DCZI y j K — 3> >mm. ^

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC4 Unit-mm Weight 0.326g Typ 40 V 10A Feature • SM D >SMD • Tj=150°C 1Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E 1 P r r s m Rating 1 High lo Rating -Small-PKG Main Use

diode tfk s 220

Abstract: TFK 490 tfk 123 7 TFK S
Contextual Info: Schottky Barrier Diode Twin Diode mtm DF25SC6M 60V m U nit-m m Package : STO -220 W eight 1.5g T y p P y K L l°-(ffl) 5A 10.2 Feature a <SMD 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • SM D • Tj=150°C • P OUTLINE rrsm 4.7 Main Use

smd diode marking YK

Contextual Info: Schottky Barrier Diode Single Diode MW .® D2FS4 40V1.6A O UTLINE U n it^ m m Package : 2F W e ig h t 0 .1 6 g T y p * y — K v— Feature | Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD • Tj=150°C ' P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use

Contextual Info: Diodes SMD Type Surface Mount Zener Diode MM3Z2V7S SOD-323 Unit: mm • Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 ● Planar Die Construction ● Ultra-Small Surface Mount Package ● Ideally Suited for Automated Assembly Processes

smd diode marking BM 47

Contextual Info: Schottky Barrier Diode Twin Diode m tm OUTLINE Package : STO-220 DF20SC9M U n it-m m W e ig h t 1 .5 g T y p PyhfLig-(ffl) 10.2 90V 20A Feature •SMD >SMD 1Tj=150°C 1 P rrsm Rating 1 High lo Rating -Small-PKG • Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E

AN0005

Abstract: CHM1290 CHM1290REF RO4003 microwave IC
Contextual Info: CHM1290REF 20-30GHz SUB-HARMONICALLY PUMPED MIXER GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a multi-function chip which integrates a self biased LO buffer amplifier and a sub-harmonic diode mixer for 2LO

Contextual Info: IDB30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling

Contextual Info: IDB09E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 9 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling

Contextual Info: IDB18E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 18 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling

smd code marking 4A

Contextual Info: IDP04E120 IDB04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling

D18E120

Abstract: IDP18E120 diode MARKING CODE 18A IDB18E120 smd diode 36A 18a smd marking P-TO220-2-2
Contextual Info: IDP18E120 IDB18E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 18 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.