DIODE SJ 66 Search Results

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S -wsi sJ«w'','sa'8 HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Module RM400DY-66S • ID C . 4 0 0 A • V rrm . 3 3 0 0 V

Sj Schottky Rectifier

Contextual Info: SENSITRON 1N6660, 1N6660R SJ, SX, SV SEMICONDUCTOR TECHNICAL DATA DATASHEET 4300, Rev- HERMETIC POWER SCHOTTKY RECTIFIER Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • •

C 5074 transistor

Contextual Info: SENSITRON SEMICONDUCTOR 1N6102A/US thru 1N6137A/US TECHNICAL DATA DATA SHEET 5074, REV. – SJ SX SV Transient Voltage Suppressor Diode, 500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C

Contextual Info: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W

1n4109-1

Abstract: zener diode 10 sv
Contextual Info: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1

1n4109-1

Contextual Info: 1N4106-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX TECHNICAL DATA DATASHEET 5095, Rev A Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4106-1/UR -1 1N4107-1/UR -1 1N4108-1/UR -1

DO-203AB

Abstract: SBR8210 SBR8215
Contextual Info: Schottky OR’ing Diode SBR8210. SBR8215 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes -, SJ _i É? I I I II i l „ . J 1 G F » 1 E 1 Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is

IEC 60947-5-6

Abstract: 60947-5-6 KFD2-SRA-Ex4 NCN3-F24R-N4 NCB2-12GM35-N0 NCB15 U1 NO NCB15 NCN3-F36-N4 namur standard positioner valve positioners
Contextual Info: Transformer Isolated Barriers KFD2-SRA-Ex* Output: Relay Input EEx ia IIC Input II + - Control circuit EEx ia IIC 24 V DC nominal supply voltage Reversible mode of operation Lead monitoring short circuit LK and interruption LB with LED indicator (red flashing), switching output and

Contextual Info: RF2140  9 '&6 32: 5 $03/, ,(5 7\SLFDO $SSOLFDWLRQV • Commercial and Consumer Systems • 3V DCS1900 (PCS) Cellular Handsets • Portable Battery-Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible 2 POWER AMPLIFIERS • 3V DCS1800 (PCN) Cellular Handsets

DIODE SJ 98

Abstract: DIODE SJ 66 MOSFET KV diode sj mosfet for 900V, 6A 2sk3983
Contextual Info: 2SK3983-01L,S,SJ FUJI POWER MOSFET 200511 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

diode sj

Abstract: n-channel 250V power mosfet 2SK3927-01L Diode SJ 56
Contextual Info: 2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators

2SK3927-01L

Abstract: 1NCF
Contextual Info: 2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators

IC 4558 surround sound circuit

Abstract: ILX554 ICX285AL LCX029amt sony led tv electronic diagram LCX017CLT surround circuit using ic 4558 pin diagram composite to GVIF ILX551A GVIF
Contextual Info: FIRST HALF 2 0 0 1 semiconductor product guide Table of Contents CAVD Multimedia Products . . . . . . . . . . . . . . . . . . . . . . . . 2 CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3

RF2 2A 250V

Contextual Info: RF2 2-pole Force Guided Relay / SJ Series Socket For simple and easy safety measures - reduce costs and installation space. • 2-pole force guided relay to reduce cost and installation space. • Force guided contact mechanism EN50205 Type A TÜV approved .

Diode SJ 56

Contextual Info: 2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators

led 5050 rgb datasheet

Abstract: 5050 rgb led GVIF cable ILX511 sony exview camera IC 4558 surround sound circuit CCD LINEAR SENSOR 512 IC PROCESSOR VCT1 ICX205 ccd sony ilx511
Contextual Info: F I R S T Q U A R T E R 2 0 0 0 semiconductor product guide Table of Contents CCDs Area Sensor — Color . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Area Sensor— Black & White. . . . . . . . . . . . . . . . . . . . . 3 Area Sensor — Progressive Scan . . . . . . . . . . . . . . . . . . 4

2SK3596

Contextual Info: 2SK3596-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

sj 2519

Contextual Info: 2SK3556-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

200V 50A mos fet

Abstract: diode sj n-channel 250V power mosfet 2SK3556-01L
Contextual Info: 2SK3556-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply

200V 50A mos fet

Abstract: power supply 100v 30a schematic 2SK3596-01L
Contextual Info: 2SK3596-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6

6R520E6

Abstract: IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6

6R520E6

Abstract: IPA60R520E6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CFD2650VThinpak 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™CFD2PowerTransistor IPL65R210CFD 1Description