6R520 Search Results

6R520C6

Abstract: IFX Design tools IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6

6R520P

Abstract: IPA60R520CP JESD22 mosfet d38
Contextual Info: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R520C6

Abstract: IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22 SMD mosfet MARKING code C6 TRANSISTOR SMD MARKING CODE 512 6R520C
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6 IPA60R520C6 Description

6R520C6

Abstract: IPA60R520C6 IPx60R520C6 6R520C IPD60R520C6 IPP60R520C6 JESD22 J-STD-20
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6

6r520

Contextual Info: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R520P

Abstract: IPP60R520CP JESD22 PG-TO220-3
Contextual Info: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R520E6

Abstract: IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6

IPA60R520CP

Contextual Info: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R520E6

Abstract: IPA60R520E6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6

6R520P

Abstract: IPD60R520CP JESD22 smd transistor ISS d38 marking transistor SMD TRANSISTOR MARKING Dd
Contextual Info: IPD60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

IPB60R520CP

Abstract: JESD22 SMD TRANSISTOR MARKING Dd 6R520P
Contextual Info: IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications