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Glenair Inc 660-004B16R5-206 - Bulk (Alt: 660-004B16R5-206)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	660-004B16R5-206	Bulk		3 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	660-004B16R5-206	Bulk			1	1 $328.94 10 $205.02 100 $141.74 1000 $141.74 10000 $141.74	Buy Now
Interstate Connecting Components	660-004B16R5-206					1 $346.76 10 $210.88 100 $210.88 1000 $210.88 10000 $210.88	Buy Now
FDH Electronics	660-004B16R5-206					1 - 10 - 100 - 1000 - 10000 -	Get Quote
CTS Corporation 516R52005ITR - Tape and Reel (Alt: 516R52005ITR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	516R52005ITR	Tape & Reel		10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $2.30	Buy Now
CTS Corporation 516R52010CTR - Tape and Reel (Alt: 516R52010CTR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	516R52010CTR	Tape & Reel		10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.91	Buy Now
CTS Corporation 516R52025CTR - Tape and Reel (Alt: 516R52025CTR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	516R52025CTR	Tape & Reel		10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.91	Buy Now
CTS Corporation 526R52020ITR - Tape and Reel (Alt: 526R52020ITR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	526R52020ITR	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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6R520 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
6R520C6 Abstract: IFX Design tools IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22 Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6	Original	ipx60r520c6 ipd60r520c6 ipp60r520c6 ipa60r520c6 +36r520c6 ifx design tools jesd22	PDF
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6	Original	ipx60r520e6 ipp60r520e6 ipa60r520e6	PDF
6R520P Abstract: IPA60R520CP JESD22 mosfet d38 Contextual Info: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	ipa60r520cp pg-to220 6r520p jesd22 +1mosfet d38	PDF
6R520C6 Abstract: IPA60R520C6 IPD60R520C6 IPP60R520C6 JESD22 SMD mosfet MARKING code C6 TRANSISTOR SMD MARKING CODE 512 6R520C Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6 IPA60R520C6 Description	Original	ipx60r520c6 ipd60r520c6 ipp60r520c6 ipa60r520c6 +56r520c6 jesd22 smd mosfet marking code c6 transistor smd marking code 512 6r520c	PDF
6R520C6 Abstract: IPA60R520C6 IPx60R520C6 6R520C IPD60R520C6 IPP60R520C6 JESD22 J-STD-20 Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.0, 2009-09-17 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R520C6, IPP60R520C6	Original	ipx60r520c6 ipd60r520c6 ipp60r520c6 ipa60r520c6 +46r520c6 6r520c jesd22 j-std-20	PDF
6r520 Contextual Info: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	ipa60r520cp pg-to220 6r520p 6r520	PDF
Contextual Info: IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	ipb60r520cp pg-to263 6r520p	PDF
6R520P Abstract: IPP60R520CP JESD22 PG-TO220-3 Contextual Info: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	ipp60r520cp pg-to220 6r520p jesd22 +1pg-to220-3	PDF
Contextual Info: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V 24 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	ipp60r520cp pg-to220 6r520p	PDF
6R520E6 Abstract: IPA60R520E6 JESD22 TO-220 package thermal resistance 6r520 Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6	Original	ipx60r520e6 ipp60r520e6 ipa60r520e6 6r520e6 +3jesd22 to-220 package thermal resistance 6r520	PDF
IPA60R520CP Contextual Info: IPA60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	ipa60r520cp pg-to220 6r520p	PDF
Contextual Info: IPP60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	ipp60r520cp pg-to220 6r520p	PDF
6R520E6 Abstract: IPA60R520E6 JESD22 Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R520E6 Data Sheet Rev. 2.0, 2010-04-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R520E6, IPA60R520E6	Original	ipx60r520e6 ipp60r520e6 ipa60r520e6 6r520e6 +1jesd22	PDF
6R520P Abstract: IPD60R520CP JESD22 smd transistor ISS d38 marking transistor SMD TRANSISTOR MARKING Dd Contextual Info: IPD60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	ipd60r520cp pg-to252 6r520p jesd22 +3smd transistor iss d38 marking transistor smd transistor marking dd	PDF

IPB60R520CP Abstract: JESD22 SMD TRANSISTOR MARKING Dd 6R520P Contextual Info: IPB60R520CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.520 Ω R DS on ,max @ Tj = 25°C • Ultra low gate charge V Q g,typ 24 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications	Original	ipb60r520cp pg-to263 6r520p jesd22 +1smd transistor marking dd	PDF