DIODE SJ 02 Search Results

1N4475

Abstract: 1N4465 1N4469 1N4474 1N4464 Zener diode zener diode 1N4464 1N4478 1N4477 1N4471 1N4479
Contextual Info: SENSITRON SEMICONDUCTOR 1N4464 thru 1N4494 1N4464US thru 1N4494US TECHNICAL DATA DATA SHEET 5080, Rev SJ SX SV Zener 1.5W DIODE • Ultra-low reverse leakage current • Zener voltage available from 36V to 160V • Sharp Zener knee • Metallurgically bonded

Contextual Info: E R E 2 4 - 0 6 • E R E 7 4 - 0 6 3 o a •6 0 0 V • Outline Drawings FAST RECOVERY DIODE : Features <i"<—î/a 'sj-'y y • Glass passivated chip High reverse voltage capability Stud mounted • Applications • • • Switching power supplies Free-wheel diode

c81-004

Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
Contextual Info: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class

Contextual Info: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W

1N3595-1US

Abstract: JANTXV 1N3595 equivalent 1n3595-1 1N 457 equivalent 1N3595US JANTX 1N3595 jantx1n3595-1 1N3595-1 JANTX JANS1N3595US melf diode D-5D
Contextual Info: 1N3595-1, 1N3595US-1 Standard VF CONTROLLED DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5086, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Vf Controlled Diodes Qualified per MIL-PRF-19500/241

Diode SJ 44

Contextual Info: SKNa 20 Stud Diode Avalanche Diode SKNa 20 Features # $%&'& *+ ,-.+ /+%+/0+ # # # )*&/&),+/10,1) 2. ,3 4566 7+/8+,1) 8+,&' )&0+ 91,* :'&00 1(02'&,3/ $(3;+ 01;+ ,*/+&;+; 0,2; <=> ? @33'1(: %1& 8+,&' .'&,+0 3/ *+&, 01(A0 =BCD $(3;+ ,3 0,2; MGNOK81( <LO?= Q R6 $

6R070C6

Abstract: 6R070C6 MOSFET TRANSISTOR IPW60R070C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPW60R070C6 Description

65E6380

Abstract: IPx65R380E6 IPA65R380E6 Infineon CoolMOS IPD65R380E6 TRANSISTOR SMD MARKING CODE diode smd E6 Diode SMD SJ 02 65E-6 ID32
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R380E6 Data Sheet Rev. 2.0, 2010-01-02 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPD65R380E6, IPI65R380E6 IPB65R380E6, IPP65R380E6

6R190C6

Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

Diode SJ

Abstract: Diode SJ 02 Diode SJ 12 LR35579 Diode SJ 9 HZ- zener
Contextual Info: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES • FEATURES ● ● ● ● ● UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g High reliability, long life and maintenance free

SCHEMATIC 10kw POWER SUPPLY WITH IGBTS

Abstract: atx 500w schematic Solar Charge Controller smps MOSFET IGBT DRIVERS THEORY AND APPLICATIONS Solar Charge Controller PWM smps 500W 24V SMPS 200w circuit single output ATX SMPS ATX SMPS schematics schematic SMPS 24V
Contextual Info: Application Note, V1.0, February 2008 CoolMOS TM 900V New 900V class for superjunction devices A new horizon for SMPS and renewable energy applications Power Management & Supply Edition 2008-02-10 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: SKKD 15, SKKE 15 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 0 Rectifier Diode Modules SKKD 15 SKKE 15 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # -324% 5%(&125 2*-0&'%4 1%'&0 6&*%70&'% $&(4 *-04%(%4 8-2)'* +-( ,2/, (%02&6202'9 :; (%5-/)2<%4= +20% )-> ? @A BAC

diode 1n4637

Abstract: in4632 zener diode in4560 1N41 IN4620 IN4550 IN4624 1n41113 1N4611A IN4619
Contextual Info: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z

Contextual Info: Single In-line Package Bridge Diode • O U T L IN E D IM E N S IO N S D15XBDH uut, ■ 7 7 xgjjilffiJ O' / hBdVj W ,4 .6 -02 3.6*02 600V 15A CM co * • 2.7*0-2 0.7±01 Unit i mm ■ fc fe m R A TIN G S A bsolute Maximum R atings g m te -s t Symbol Item

Sj 35 diode

Abstract: SJ95
Contextual Info: TOSHIBA TD62001-004P/AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62001P, TD62001AP, TD62001F, TD62001AF, TD62002P, TD62002AP, TD62002F TD62002AF, TD62003P, TD62003AP, TD62003F, TD62003AF, TD62004P# TD62004AP TD62004F, TD62004AF

2SK2052

Abstract: 2SK2052-R
Contextual Info: S P E C I F I C A T I O N DEVICE NAME P o w e TYPE NAME 2 S K 2 0 5 2 - R r M O S F E T SPEC. No. F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED NAME APPROVED Fuji Electric CoJjtd. I. 0 Y 0257-R-004a

9393B

Contextual Info: SKM 200GB063D 7% V SI WH+ / * 00 ,3&)4?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 7X V SI WH :H 7X V RIJ WH :H¥] Superfast NPT-IGBT Modules SKM 200GB063D 390% ZJJ G SZJ P 7%'0) V [J WH SJJ P _JJ P ` SJ G RJ d0 7%'0) V SI WH SJJ P 7%'0) V eJ WH

bft sbs

Abstract: oloa+8888+LUBRICANT 2SK623 R20A
Contextual Info: blE D • 2SK623 MMTbEDS OQiailü ÖSb ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 02 ■ FEATURES 1 G a ie [2.8 • • • • • 2 Low On-Resistance High Speed Switching Low Drive Current 0 3 No Secondary Breakdown

2T354

Abstract: D5FB20Z SHINDENGEN DIODE
Contextual Info: SHE P SHINDENGEN ELECTRIC MF6 • ■ 021^ 307 DDOOSn 2T4 ■ S H E J ÏWttÎkm O U T L IN E DIMENSIONS D5FBDZ 400V 6A ■ fctëm RATINGS A b s o lu te Maximum R atin g s m i Item Sym bol S to ra g e Tem perature S t e f f i* O perating J u n c tio n Tem perature

Contextual Info: TOSHIBA TA78M05,06,0 8 ~ 1 0,12,15,18,20,24F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78M05F, TA78M06F, TA78M08F, TA78M09F, TA78M10F TA78M12F, TA78M15F, TA78M18F, TA78M20F, TA78M24F 0.5 A THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5 Vf 6 Vf 8 Vf 9 Vf 10 Vf 12 Vf 15 Vf 18 Vf 20 Vf 24 V

Contextual Info: SKiiP 14NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper L<DT .< .<1Z L/DT -* R HG S<J 45%7* 2&97'8:*7 *B7?: :76 -* R HG VWOX S< -¥ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +

in4632

Abstract: IN4619 50 watt zener diode 1n4549 14584 IN4575A 1N4549 1N4550 1N4551 1N4552 1N4553
Contextual Info: H H M M M H Z Z Z z z z A * A A A A 2 2 2 2 2 2 M H O M M M z z z A A A 0t W W CO SO 00 sj M H M z z z A A A 0> Ot Ot WWW 9 m A M M M z z z A A A 9 0 lO > CO CO Co W N h MMH* z z z A A A Oi 0 ) 01 co ro ro O lO 00 M z A 01 N) sj M z A 01 N) 01 M M M Z Z Z

NS1000 n

Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

SJ 76 A DIODE

Contextual Info: SKM 100GB125DN G% R LS TC+ / * 00 ,6&)7420) 08)%2<2)5 Absolute Maximum Ratings Symbol Conditions IGBT UCQ1 GV R LS TC ?C GV R ISJ TC ?CPY Ultra Fast IGBT Module SKM 100GB125DN 680% ILJJ U IJJ D G%'0) R XS TC XJ D ISJ D [ LJ U GV R ILS TC IJ _0 G%'0) R LS TC