DIODE SG 71 Search Results

Schaffner IU 1237

Abstract: Schaffner 1237 NSG506C 7R2R23
Contextual Info: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS

0809 al

Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
Contextual Info: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE

Diode MARKING S37

Abstract: transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623
Contextual Info: r= 7 SG S-TtfO M SO N * 7 £ [M M iL E g ïM O g S LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS

transistor 467 sgs

Abstract: 0809 al diode sg 5 ts sgs30da070
Contextual Info: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE

SGS50DA045D

Abstract: SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D
Contextual Info: 3QE f Z d 7 ^ 7 # S G m TTS'iaa? G03Dhba ^ b • S G S -T H O M S O N c lU O T * ! SG S50D A 045D S - TH OM SO N NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

NPN DARLINGTON POWER MODULE

Abstract: SGS50DB040D 9120 mosfet SGS50D
Contextual Info: J O E J r r z ^ 7 # s 1= H S 7^2^237 DD3D72D 4 • G S - T H O M S O _ N [» [H im iO T Q K S SG S50D B 040D HALF BRIDG E NPN DARLINGTO N PO W ER MO DULE G S-THOMSON . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) « LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE

Contextual Info: 3QE D • 7 ^3*^537 / T T S G S -T H O M S O N * 7 # [ « ^ Q m i( g ™ iD ( g § Q03Ü023 Fg M ■ 'T - '¥ \ - \ '} > s TH0MS0N S G S P 4 7 1 S G S P 472 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on Id S G S P 4 71 10 0 V

SP571

Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
Contextual Info: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

FTF7040

Contextual Info: IMAGE SENSORS DATA SHEET FTF7040M in PGA 28M Full-Frame CCD Image Sensor Preliminary product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Preliminary Specification 28M Full-Frame CCD Image Sensor • 28M active pixels 7168H x 4096V

FTF7040M

Abstract: 74ACT04 BAS28 BG40 ccd application vns Dalsa
Contextual Info: IMAGE SENSORS DATA SHEET FTF7040M in PGA 28M Full-Frame CCD Image Sensor Preliminary product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Preliminary Specification 28M Full-Frame CCD Image Sensor • 28M active pixels 7168H x 4096V

SG2074W

Abstract: SG2077W DTL 935 PC 2077R 2066 SG2065W SG2067 ULN-2077B sg2075w BJ SMD IC
Contextual Info: SG2064 THRU SG2077 5 IL IC D N GENERAL QUAD 1.5 AMP DARLINGTON SWITCHES L IN E A R IN T E G R A T E D C IR C U IT S D ESC R IP TIO N FEATURES T h ese high-voltage, high-current Darlington arrays are monolithic bipolar devices especially designed for interfacing low-level control logic and peripheral loads

D773

Abstract: P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SP369 SGSP469 sgsp468
Contextual Info: S G S -T H O M S O N SGSP368/P369 D7E D § T T ST H B ? 73C 17403 D 0D 17TQ ti û | “ SGSP468/P469 SGSP568/P569 : N_CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

SG 21 DIODE SMD

Abstract: diode sg 36 SQ2014 14104BEA 14103BEA SG2023
Contextual Info: SG2000 SERIES 5 IL IC D N GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEA TU RES The SG 2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

Contextual Info: r s T ^7 S G S - T H O M S O N # ffifli g®@[iiL[i(Sir®@oaD(gi R C D 1 6 -4 7 B R-C-D TERMINATOR NETWORKS FEATURES O Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot. □ Monolithic device for greater reliability.

diode sg 32

Abstract: p519 em 518 diode sgsp218 IN6723 SG-45 diode P319 TL 1838 sgsp318 diode sg 82
Contextual Info: s G S“ THOMSON 07É D J 7 ^ 5 3 7 , 7 3 C. 17 2 9 7 SGSP118/P119 SGSP218/P219 . SGSP318/P319 SGSP518/PS19 ' HIGH SPEED SW ITCHIN G APPLICATIONS ABSOLUTE M A X IM U M RATINGS •d m *! ' d LM . Pto. ^"stg Ti T - 3 9 -H N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cel! silicon gate

SG10LC20USM

Abstract: fast recovery diode low voltage FT0220G
Contextual Info: Super Fast Recovery Diode Twin Diode SG10LC20USM O U TLIN E 200V 10A Fe a tu re •i& y 'fx • trr=25ns • 711^-10 K 2kV S I I • • • • Low Noise tnr=25ns Full Molded Dielectric Strength 2kV M ain U s e • y ^ 'O n - n • =^3S, OA, 88 •ÌH 8 .F A

3731J

Contextual Info: SGI 731/SG2731/SG3731 5ILICDN GENERAL LINEAR INTEG RATED CIRCUITS DC MOTOR PULSE WIDTH MODULATOR DESCRIPTION FEATURES The SG1731 is a pulse width modulator circuit designed specifically for DC motor control. It provides a bi-directional pulse train output in response to the magnitude

diode sg 52

Abstract: diode sg 5 ts diode sg 79 SG-52 diode 131706 diode sg 38 h07v-k UL VlI15 diode sg 69 1N4007 BL
Contextual Info: Feed-through terminals for initiators and actuators DLI 2.5 DLI 2.5 LD W Dimensions Width / length / height mm with TS 35 x 7,5 W Insulation stripping length/clamping screw/screwdriver blade VDE rated data, VDE 0611 Part 1/8.92/IEC 947-7-1 Rated voltage / current / cross-section

SG10SC6

Abstract: SG10SC6M FTO-220G L50Hz SG10S G10SC6M
Contextual Info: Schottky Barrier Diode Twin Diode mtm SG10SC6M OUTLINE 60 V 10 A Feature • Tj=175°C • Tj=175°C • P R R S M ^ A '^ V Î / l f f i l Œ • P rrsm • 711^-11 F Rating • Full Molded • ÎË iB IÎŒ 1 .5 k V ffilI • Dielectric Strength 1,5kV • D C /D C

DC24V-48V

Abstract: SPB05-1R0 SPB05-2R0 SPB12-R40 SPB12-R80 SPB24-R20 DC24V REMOTE RV-1
Contextual Info: 1/8 001-02 / 20030510 / ea224_spb.fm Power Supplies DC Input Single Output, General-Purpose The S series SPB products are wide-input super-thin type (9mm max.) available for the 24V and 48V types. The super-thin and ultra-light design has been realized by means of a high-density

SPB12-R80

Abstract: SPB05-2R0 SPB05-1R0 1R0 choke A224 SPB12-R40 SPB24-R20 diode sg 69
Contextual Info: A224_SPB 1/8 TDK Switching Power Supply Super-thin type DC.24 to 48V wide input power supply S SERIES SPB [FEATURES] • Wide-input (DC.20 to 56V) super-thin type single-output power supply. • Plastic package, onboard type. • Ultra-light. • Input-output floating.

BYV 35 C

Abstract: ByV schottky BYV 35
Contextual Info: f Z * 7 71,. S G S -T H O M S O N !10»i[Li gTO(s i[l(gê_BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode

Contextual Info: TA8409S/SG, F/FG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8409S/SG, TA8409F/FG Bridge Driver The TA8409S/SG and TA8409F/FG are bridge drivers with output voltage control. TA8409S/SG Features z Modes available CW/CCW/STOP/BRAKE z Output current up to 0.4 A (AVE) and 1.0 A (PEAK)