DIODE SCHOTTKY CODE 10 Search Results

smd diode code WP

Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
Contextual Info: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

D1353

Abstract: marking Um diode 14-077S 330 marking diode
Contextual Info: Silicon Single Flip Chip Schottky Diode BAT 14-077S Preliminary Data Sheet • • Single Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

marking Um diode

Abstract: W-band diode diode marking um mixer diode w-band dual diode mixer 14-077D diode d.a.t.a. book marking code um
Contextual Info: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Contextual Info: BAT165WS SCHOTTKY BARRIER DIODE Features • Medium current schottky rectifier diode PINNING PIN Applications • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications DESCRIPTION 1 Cathode 2 Anode 2 1 K0 Top View Marking Code: "K0"

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

RJS6004TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: Central CMASH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-923 CASE MARKING CODE: A TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CMASH-4 is a high quality Schottky Diode designed for applications where very small size and operational efficiency are prime

Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A

Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

PRSS0003ZE-A

Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

schottky diode sod-123 marking code 120

Abstract: marking code diode 14 1N5819WB diode sod-123 marking code 26 diode sod-123 marking code 120 marking code sr MARKING ME 123 1N5817WB 1N5818WB diode marking 14
Contextual Info: 1N5817WB-1N5819WB 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Marking: 1N5817WB Marking Code: A0 1N5818WB Marking Code: ME 1N5819WB Marking Code: SR Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25OC

SCHOTTKY DIODE SOT-143

Abstract: BAT 58
Contextual Info: Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped

Contextual Info: CMUSH2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSH2-4L is a High Current Low VF Silicon Schottky Diode in an SOT-523 Surface Mount Package. MARKING CODE: U24

Contextual Info: CMUSH2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSH2-4L is a high current, low VF silicon Schottky diode in an SOT-523 surface mount package. MARKING CODE: U24

4E diode

Contextual Info: CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E

4E diode

Abstract: marking code 4e
Contextual Info: CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. MARKING CODE: 4E

Contextual Info: CMUSHW2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUSHW2-4L is a high current low VF silicon Schottky diode in an SOT-523W surface mount package. MARKING CODE: 24W

SOT23 DIODE marking CODE AV

Abstract: marking code re DIODE marking 33 marking code RF marking code RD RD SOT-23 marking code TS bar43a re BAR43C marking 724 diode
Contextual Info: BAR43 / A / C / S SCHOTTKY BARRIER DIODE BAR43 3 1 2 BAR43A 3 1 2 BAR43C 3 1 2 BAR43S 3 1 2 SOT-23 Plastic Package BAR43 Marking Code: RD BAR43A Marking Code: RE BAR43C Marking Code: RF BAR43S Marking Code: RH Absolute Maximum Ratings Ta = 25 OC Parameter

SCHOTTKY DIODE SOT-143

Abstract: DIODE MARKING s7 A1017
Contextual Info: Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099 S7