DIODE S6M Search Results

S2M diode

Abstract: diode S6M diode s2m IN5622 1N5614 JANTX IN5618 DIODE in5616 1N5614 1N5616 1N5618
Contextual Info: SEHTECH CORP SfiE D 1N5614 1N5616 1N5618 S2M S4M S6M 1N5622 SOM • 013^13^ OODBbSO ATS * S E T STANDARD RECOVERY QUICK REFERENCE AXIALLEADED HERMETICALLY SEALED DATA STANDARD RECOVERY RECTIFIER DIODE • Vr • If • trr • Vf = 200 - 1000V = 2.0A = 2 i.S

Contextual Info: i*imi ra@iû gs SCS-THOMSON 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL

Contextual Info: S6K thru S6QR Silicon Standard Recovery Diode VRRM = 800 V - 1200 V IF = 6 A Features • High Surge Capability • Types from 800 V to 1200 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

Contextual Info: S6K thru S6QR Silicon Standard Recovery Diode VRRM = 100 V - 1200 V IF = 6 A Features • High Surge Capability • Types up to 1200 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

Contextual Info: S6K thru S6QR Silicon Standard Recovery Diode VRRM = 100 V - 1200 V IF = 6 A Features • High Surge Capability • Types up to 1200 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

SR 1503

Abstract: STM-16 receptacle LC plastic dfb laser diode cwdm dfb laser diode 1577 S6M1 mitsubishi TOSA
Contextual Info: WZ700071A 1/4 MITSUBISHI (OPTICAL DEVICES) ES Product FU-60RDF-S6M1x 1.55 µm CWDM DFB-LD WITH LC RECEPTACLE FOR LONG HAUL APPLICATIONS DESCRIPTION FU-60RDF-S6M1x is a 1.55µm DFB-LD TOSA (Transmitter Optical Subassembly) with a single-mode fiber stub. This module is designed for use in high-speed, long haul

Contextual Info: 1N5614 1N5616 1N5618 1N5620 1N5622 R E C T IF IE R ’ u p t 0 1 k V ’ 2 A ’ 2 jls January 7, 1998 QUICK REFERENCE DATA Vr = 200- 1000V If = 2.0A trr = 2\iS VF = 1.1V S2M S4M S6M S8M SOM TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com AXIALLEADED HERMETICALLY SEALED

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

fuji ipm

Abstract: 7MBP75RE120 hcpl 0350 AC2500 HCPL-4504 diode S6M
Contextual Info: SPECIFICATION D e v ic e N a m e : IG B T -IP M Type S pec. Nam e N o. 7M BP75R E1 20 ; M S6M 0350 F u ji E le c t r ic C o . , L td . M a ts u m o to DATE H DRAWN i CHECKED ! NAME F a c to r y APPROVED Fuji E le ctric Co.,Ltd. Jarf C i Ya.maqacl i .i *]_ O u J lilM )

transistor dk

Abstract: dk transistor
Contextual Info: SKM 111AR MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions P, Q DK R%+ 8 * 55 /.&)3L45) 5;),4=4)0 Values Units ABB DBB @AKBC IBB X DB 9 ZB GGG [ AKB @ADKC S 1 1 S R% DKBB S <¥ Q 9 <6 DBB 1 <¥V Q 9 <6V IBB 1 SM6 <M <MV SW6 P2Y+ @P5.:C S45/* P5 Q DK @UBC R%

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

2KV DIODE

Abstract: semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage suppressors and custom assemblies. These are available in a variety of packages. Complete device specifications and typical

100C

Abstract: 7MBR50SB140-01
Contextual Info: Dev ice Name Type Name Spec. DATE DRAWN jUh- 2 ~'ev ChCCKED7ur^~ 2. ~cn> NAME No. Date DWG.NO. This maierisl aftd ihe tnlorrcution herein It the property of Fuji Hiectnc Co.tid.Thsy shill be neither reproduced, copied, lens, or disclosed 'ift any way whatsoever or the use of #ny

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

S6M100

Abstract: STPS6M100DEE-TR stps6m100dee FR4 epoxy
Contextual Info: STPS6M100DEE High voltage power Schottky rectifier Datasheet  production data Features NC • Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ High junction temperature capability ■ ECOPACK 2 compliant component

100C

Abstract: 600Y 7MBR35SB120-01 7mbr35sb120
Contextual Info: SPEC 1F 1CAT 1ON IGBT Module Device Name >- O. ~ £ 58«* s seB a a • o 0! " Q o aü •- Ç ^ a> - Type Name : Spec. : Date No. 7MBR35SB120-01 MS6M 0554 Jun. - 02 - 2000 : 51 l ì ” fi¿ i •g * 5 £ o ï Eç i -c « “* «» > • îp»>■c>■t“ fin

100C

Abstract: 7MBR25SA140-01 H04 D 35 inverter circuit rockwell inverter
Contextual Info: This m a te ria l and the In fo rm a tio n herein is the p ro p e rty of Fuji Electnc C o .Ltd.T hey shall be neither reproduced, copied, le n t. o r disclosed In any w a y w h atso ever fo r the use o f any third parry.no r used to r rhe m a n u fa c tu rin g p u rpose s w ith o u t

TA5C

Abstract: 100C 7MBR10SA060D-01
Contextual Info: Thìi, m a teria l and ihe Inlurmation ,">ercin is llié pruperty o l:u|i ttectoc Co U J .llie y shall ;e neUlier repioilucecl. copiaci toni, or iiio ciossii in any way whatsoevo/ for itie use ol any thiid ("'arTy.nor usad (or ;lie manufacturing purposes w lih o u t

VLN 2003

Abstract: zener diode 1.5V IR9161 diode k70 IR9161N
Contextual Info: SHARP ELEK/ MELEC D IV 7 -7 3 -5 " 3 1SE D | 01007=18 Low Power Quad Comparator 3 | ÌR9161/IR9161N IR9161/IR9161N • 0005072 Description ■ Comparator Pin Connections The IR9161/IR9161N is a low power guad compa­ rator capable of controlling a supply current, input

LM2904F

Contextual Info: THOMSON SEMICONDUCTORS LM158 LM258 LM358 LM2904 LOW POW ER D UAL O PER A TIO N A L A M P L IFIE R S LOW POWER D UAL O PER A TIO N A L A M P L IFIE R S These circuits consist of tw o independent, high gain, internally frequency com ­ pensated which were designed specifically to operate from a single power supply

100C

Abstract: 120C 7MBR20SA060D-01 7MBR20SA060 aos Manufacturing date code
Contextual Info: the e x p re ss wrltien way w h atsoe ve r co n se n t is the p ro p e rty of w it h o u t Co. L td. p u rp o se s for the use of a n y re p ro d u c e d , c o p i e d of Fuji Electric for the m a n u fa c t u rin g in any or disclosed p a n y .n o r used

100C

Abstract: 7MBR50SB060-01 H04-004 LA1-12V
Contextual Info: the ihe express w ritte n ihirt party nor used pro pei ly w it h o u t Co . L td . p u rp o se s c o n s e n t of Fuji Electric for the m a n u fa c tu rin g of of a n y re p ro d u c e d . c o p ie d hei uin is ihe w<iy w h a ts o e v e r lor the use shall be neither

7MBR50SA060

Abstract: 100C 7MBR50SA060-01 FUJI DATE CODE
Contextual Info: H04-004-05 î lu i the ar i¡i¿ t-! i'-.od e x p re s s in rtny w r itte n h i1(«in io n s e n t v v lc ^ ls o t'v e i is ihe p r o p e r ty of itie ose Co. S u i p u rp o s e s for w ith o u t of ;in y aï pro due ed. c o p ie d of Fuji E le c iiii: ihe m a r u ifa c n ir in c j