DIODE S412 Search Results

Contextual Info: SINGLE-POLE, FOUR-THROW SWITCHES The S4 series of single pole, four throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

SPD31N05

Abstract: SPU31N05 P-TO252
Contextual Info: SPD31N05 SPU31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD31N05 55 V 31 A 0.04 Ω P-TO252 Q67040 - S4121 - A2

P-TO252

Abstract: SPD14N05 SPU14N05 S4123
Contextual Info: SPD14N05 SPU14N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD14N05 55 V 13.5 A 0.1 Ω P-TO252 Q67040 - S4123 - A2

SPD31N05

Contextual Info: SIEMENS SPD31N05 SPU31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS h RDS on Package Ordering Code SPD31N05 55 V 31 A 0.04 f ì P-T0252

spd14n05

Contextual Info: SIEMENS SPD14N05 SPU14N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS k> ROS on Package Ordering Code SPD14N05 55 V 13.5 A 0.1 Q P-T0252

004II

Contextual Info: SIEMENS SPD28N05L SPU28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/di rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type V|ds ¡0 R DS on Package Ordering Code SPD28N05L 55 V

SPD13N05L

Abstract: S4116 P-TO252 SPU13N05L
Contextual Info: SPD13N05L SPU13N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD13N05L 55 V 12.5 A

P-TO252

Abstract: SPD28N05L SPU28N05L
Contextual Info: SPD28N05L SPU28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD28N05L 55 V 28 A 0.05 Ω

df52

Contextual Info: SIEMENS SFD13N05L SPU13N05L SIPMOS Power T ransistor • N channel • Enhancement mode • Logic Level • Avalanche-rated •d i//d f rated Pin 1 • 175°C operating temperature G Pin 2 Pin 3 D S Type Vds b ^DS on Package O rdering Code SPD13N05L 55 V

SUD50P04-13L-E3

Abstract: SUD50P04-13L 73009
Contextual Info: SUD50P04-13L New Product Vishay Siliconix P-Channel 40-V D-S , 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature PRODUCT SUMMARY VDS (V) −40 40 rDS(on) (W) ID (A) 0.013 @ VGS = −10 V −60c 0.022 @ VGS = −4.5 V −48

SUR50N024-09P

Contextual Info: SUR50N024-09P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24c ID D D D D (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET

SUR50N024-06P

Contextual Info: SUR50N024-06P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID D D D D (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET

SUR50N024-09P

Abstract: VISHAY 34D
Contextual Info: SUR50N024-09P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24c ID D D D D (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET

SUD50P04-13L-E3

Abstract: 13L diode
Contextual Info: SUD50P04-13L New Product Vishay Siliconix P-Channel 40-V D-S , 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature PRODUCT SUMMARY VDS (V) −40 40 rDS(on) (W) ID (A) 0.013 @ VGS = −10 V −60c 0.022 @ VGS = −4.5 V −48

SUR50N024-06P

Contextual Info: SUR50N024-06P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID D D D D (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET

Contextual Info: SUR50N024-06P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 24C ID D D D D (A)d 0.006 @ VGS = 10 V 80 0.0095 @ VGS = 4.5 V 64 APPLICATIONS D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET

Si2328DS

Abstract: A96V
Contextual Info: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)

Si6467BDQ-T1-E3

Abstract: Si6467BDQ
Contextual Info: Si6467BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.0125 @ VGS = −4.5 V −8.0 0.0155 @ VGS = −2.5 V −7.0 0.020 @ VGS = −1.8 V −6.0 S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6467BDQ G 8 D 7 S * Source Pins 2, 3, 6 and 7

A96V

Abstract: SI2328DS-T1-E3 Si2328DS
Contextual Info: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)

A96V

Abstract: si2328ds-t1 SI2328ds rev Si2328DS D8 marking
Contextual Info: Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2328DS (D8)* *Marking Code Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)

SI6467BDQ-T1-E3

Contextual Info: Si6467BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.0125 @ VGS = −4.5 V −8.0 0.0155 @ VGS = −2.5 V −7.0 0.020 @ VGS = −1.8 V −6.0 S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6467BDQ G 8 D 7 S * Source Pins 2, 3, 6 and 7

st 6062

Abstract: st1-16v
Contextual Info: Technical data sheet • Relay Module Subject to technical modification 762120 Identification Use/Area of application Description Input Nominal voltage UN Voltage range Rated current at UN Status Indication Rated insulation voltage Input voltage Interrupting voltage

SUB85N04-04

Abstract: SUP85N04-04
Contextual Info: SUP/SUB85N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.004 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S Top View Ordering Information SUP85N04-04 SUP85N04-04—E3 (Lead (Pb)-Free)

Si7370DP

Abstract: Si7370DP-T1
Contextual Info: Si7370DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 15.8 0.013 @ VGS = 6 V 14.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching