DIODE S405 Search Results

smd marking code sot-23 infineon

Abstract: SM 226 6V
Contextual Info: BSS670S2L OptiMOS
Power-Transistor Product Summary Feature 55 VDS  N-Channel  Enhancement mode  Logic Level V RDS on 650 m ID 0.54 A SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L SOT 23 Q67042-S4052 BSs Gate pin1 Source pin 2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified

RG130

Abstract: smd marking code sot-23 infineon BSS670S2L Q67042-S4052
Contextual Info: BSS670S2L Final data OptiMOS
=Small-Signal-Transistor Product Summary Feature
N-Channel VDS
Enhancement mode R DS on 650 m

Logic Level ID 0.54 A 55 V SOT-23 3 2 1 VPS05161 Drain pin 3 Type BSS670S2L Package SOT-23 Ordering Code Q67042-S4052 Gate pin1

BSS670S2L

Abstract: smd marking code sot-23 infineon marking BSs q67042-s4052 marking BSs sot-23
Contextual Info: BSS670S2L OptiMOS Buck converter series Product Summary Feature VDS •N-Channel 55 V •Enhancement mode RDS on 650 mΩ •Logic Level ID 0.54 A SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L SOT 23 Q67042-S4052 BSs Gate pin1 Source

Q67042-S4052

Contextual Info: BSS670S2L OptiMOS Buck converter series Product Summary Feature VDS •N-Channel 55 V •Enhancement mode RDS on 650 mΩ •Logic Level ID 0.54 A PG-SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L PG-SOT 23 Q67042-S4052 BSs Gate pin1 Source

SUD17N25-165

Abstract: 40578
Contextual Info: SUD17N25-165 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 250 0.165 @ VGS = 10 V 17 APPLICATIONS D Automotive such as − Diesel Fuel Injection

Si3983DV

Abstract: Si3983DV-T1
Contextual Info: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel

Si3991DV

Abstract: 72427
Contextual Info: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS

Si3433BDV

Abstract: Si3433BDV-T1-E3 Si3433BDV-T1
Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D

40573

Abstract: SUD50N03-09P S-40573-Rev
Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters

Si3993DV

Abstract: 72320 Si3993DV-T1 si3993dv-t1-e3
Contextual Info: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.133 @ VGS = −10 V −2.2 0.245 @ VGS = −4.5 V −1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices

Si3981DV

Abstract: 7250.2
Contextual Info: Si3981DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.185 @ VGS = −4.5 V −1.9 0.260 @ VGS = −2.5 V −1.6 0.385 @ VGS = −1.8 V −0.7 APPLICATIONS

mar 735

Abstract: 40578 SUD17N25-165
Contextual Info: SUD17N25-165 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 250 0.165 @ VGS = 10 V 17 APPLICATIONS D Automotive such as − Diesel Fuel Injection

Si3981DV

Contextual Info: Si3981DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.185 @ VGS = −4.5 V −1.9 0.260 @ VGS = −2.5 V −1.6 0.385 @ VGS = −1.8 V −0.7 APPLICATIONS

40575

Abstract: SI3993DV SI3993DV-T1
Contextual Info: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.133 @ VGS = −10 V −2.2 0.245 @ VGS = −4.5 V −1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices

Contextual Info: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS

Si3433BDV

Abstract: Si3433BDV-T1-E3 Si3433BDV-T1 SI3433B
Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D

S-40573-Rev

Abstract: 40573
Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters

SI3433BDV

Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D

Si3983DV

Abstract: Si3983DV-T1
Contextual Info: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel

Si3981DV

Contextual Info: Si3981DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.185 @ VGS = −4.5 V −1.9 0.260 @ VGS = −2.5 V −1.6 0.385 @ VGS = −1.8 V −0.7 APPLICATIONS

54V4

Abstract: Si3993DV Si3993DV-T1
Contextual Info: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.133 @ VGS = −10 V −2.2 0.245 @ VGS = −4.5 V −1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices

Si3991DV

Contextual Info: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS

SI4483EDY

Contextual Info: Si4483EDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET D ESD Protection: 3000 V rDS(on) (W) ID (A) 0.0085 @ VGS = −10 V −14 APPLICATIONS 0.014 @ VGS = −4.5 V −11 D Notebook PC

S-40570

Abstract: Si7458DP Si7458DP-T1
Contextual Info: Si7458DP Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0045 @ VGS = 4.5 V 22 0.0075 @ VGS = 2.5 V 19 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile