DIODE S02 Search Results

s027

Abstract: C6802 SS-00259 high power laser IEC60825-1 SLD433S4
Contextual Info: SLD433S4 60W Array Laser Diode Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power

e05125

Abstract: C6802 IEC60825-1 SLD433S4 SS-00259 water conductivity circuit
Contextual Info: SLD433S41 60W Array Laser Diode Description The SLD433S41 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power

Contextual Info: SLD433S4 60W Array Laser Diode Preliminary Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power

1N SERIES DIODE

Abstract: 1A DIODE 1N bf 649 sb 649 a M6HZ ba 12300 M8HZ 1N645 S02MB1A RB1A
Contextual Info: mouldings a THOMSON-CSF moulages Three phase bridges Ponts triphasés + Single phase bridges Ponts monophasés + Parallel diode Series diode pairs pairs Bivalves Doubleurs VR •dsm 10 ms V RRM 'm is recom ­ mended V (V) (A) 100 200 50 80 150 250 380 In per diode

TVS Diode

Abstract: diode array S020L SO 273 tvs diode 225
Contextual Info: SECTION 2 Transient Voltage Suppressor Arrays Page Quick Reference Guide 8 Pin DIP TVS Diode Array - 4 and 6 Line DA Series: DA Series: 16 Pin DIP TVS Diode Array - 8 and 12 Line 16 Pin Hermetic DIP TVS Diode Array -1 5 Line DLZ Series: EMC Series: 16 Pin S0-16L TVS/Low Pass L/C Filter Array

Contextual Info: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused

Contextual Info: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA

diode F 82 bp

Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Contextual Info: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip

DIODE N20

Abstract: SD Series
Contextual Info: Section 9: Integrated Circuits S ch o ttky Diode A rra y Series SD A S e rie s The SDA Schottky Barrier Diode Array series is designed to reduce reflection noise on high speed parallel data lines. This helps suppress transients caused by transm ission line

Diode BAx

Contextual Info: TVS mm PRO EK . DEVICES Engineered solutions fo r th e tra n s ie n t environm ent Transient Voltage Suppressors Low Capacitance Diode A rra y DESCRIPTION This Bi-directional Diode Array TVS fam ily is a series of low capacitance silicon transient suppressors

TDA8808

Abstract: FHFM 103 plastic Disc Capacitors 808T SI 7300 S028 TDA8808AT TDA8808T
Contextual Info: TD A 8808T TDA8808AT PHOTO DIODE SIGNAL PROCESSOR FOR COMPACT DISC PLAYERS GENERAL DESCRIPTION The TDA8808 is a bipolar integrated circuit designed fo r use in compact disc players w ith a single spot read-out system. It amplifies the photo-diode signals and processes the error signals fo r the

CCS020M12CM2

Abstract: CPWR-AN13
Contextual Info: CCS020M12CM2 1.2kV, 80 mΩ Silicon Carbide Six-Pack Three Phase Module C2M MOSFET and Z-Rec Diode 1.2 kV RDS(on) 80 mΩ Esw, Total @ 20A, 150 ˚C Features • • • • • • • VDS 0.48 mJ Package Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode

GaAs SPDT IC FET

Abstract: SW-239TR MESFET Application
Contextual Info: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon­ able that operate to 3 GH z as analog attenuators, digital attenuators

S3 DIODE schottky

Contextual Info: Philips Semiconductors Objective specification 6 N-channel 30 mfi FET/Schottky barrier diode array_ FEATURES PHN603S PINNING-SOT137-1 S024 • 30 mQ on-state resistance • On board Schottky diodes for back-emf clamping. APPLICATIONS • Driving high performance three phase brushless

Contextual Info: SCHOTTKY BARRIER DIODE 1.4A /20 V EC15Q S02L FEATURES ° Miniture Size, Surface Mount Device o Extremely Low Forward Voltage Drop 2.2 .Q87 1.8(.Ô71) 4 .7 (.lo o ) _4.7(.168)_ ° Low Power Loss, High Efficiency 0.2(.Q08) -OTÜÜ55 f ° High Surge Capability

SN74CBTS3306

Contextual Info: SN74CBTS3306 DUAL FET BUS SWITCH WITH SCHOTTKY DIODE CLAMPING SC D S029D - JA N U A R Y 1996 - REVISED MAY 1998 • 5-D. Switch Connection Between Two Ports • TTL-Compatible Input Levels • Package Options Include Plastic Small-Outline D and Thin Shrink

E78996 rectifier module

Abstract: X 0238 CE D105 D106 ZD 1E3 diode 40 S02 g1e2
Contextual Info: International Eran]Rectifier • MÔS5M52 ÜOlbSñM ^23 ■ INR INTERNATIONAL RECTIFIER bSE D SERIES B40DL/CL/JL FAST RECOVERY DIODE / DIODE Power Modules in B-package Features F a s t r e c o v e r y tim e c h a r a c te r is tic s E le c tr ic a lly is o la te d b a s e p la te

s744

Contextual Info: Tem ic CQX19 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode with Metal Socket Description CQ X 19 is a high pow er G aA s infrared em itting diode in a special case, consisting o f a solid metal T O -5 header with a m olded clear plastic lens. This allow s the user to m ount the device on a heatsink and

Solder bar of Senju M705

Abstract: senju m705 solder paste spec senju m705 solder wire Senju M705 solder bar a1249 senju m705 solder paste
Contextual Info: SHARP SPEC. ISSU E ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. GM4B W6433 0A CUSTOMERS' APPROVAL PRESENTED Date_ Date C lu r& -¿ * > 7 BZ_ Y.Inada, 1 /

solder bar senju 705

Abstract: photometer EG G 150 EIAJ C-3
Contextual Info: SPEC. No. SH/VR $ /'T IS S U E /*•*' ELECTRONIC COMPONENTS ELECOM GROUP DG-07Y012 Dec. 28th, 2007 ^ ¡\ SHARP CORPORATION SPECIFICATIONS DEVICE SPECIFICATIONS FOR LIGHT EMITTING DIODE MODEL No.' GM1BW76341A CUSTOMERS’ APPROVAL PRESENTED Date_

amplifier/equalizer

Abstract: TDA1301 B302 TDA1301T
Contextual Info: Product specification Philips Sem iconductors Digital servo processor DSIC2 TDA1301T FEATURES - 28-pin SO package The DSIC2 realizes the following servo functions: - Great flexibility towards different CD mechanisms • Diode signal preprocessing - Full and transparent application information

IR230LM06CS02CB

Abstract: 40EPF
Contextual Info: Bulletin I0126J 08/97 IR230LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPF Series Major Ratings and Characteristics Parameters Units 1080 mV

40EPF

Abstract: IR230LM06CS02CB
Contextual Info: Bulletin I0126J 08/97 IR230LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPF Series Major Ratings and Characteristics Parameters Units 1080 mV

diode 1044

Contextual Info: Preliminary Data Sheet I0119J 09/00 IR060LM12CS02CB FAST RECOVERY DIODE Junction Size: Square 60 x 60 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: Major Ratings and Characteristics Parameters Units