DIODE RM 62 Search Results

5516 DIODE

Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

d-215 diode

Abstract: esm 856
Contextual Info: CALIFORNIA MICRO DEVICES ►►►►► PAC DN010 P/ACTIVE SCH O TTKY DIODE MEMORY BUS TERM INATOR Features A pplications • • ♦ • • • • Provides proper bus te rm in a tio n independent o f card loading conditions Schottky diode technology; fast tu rn on

rba-406b

Abstract: rk36 diode RBA406B RK36 diode schottky AK03 CTB-34M schottky BARRIER diode RK33 DIODE RK14 RK44 SFPB-76
Contextual Info: POWER SCHOTT DIODE iS P H B ' +T+ vs-~ ; -¿1 *h SCHOTTKY BABRIEB DIODES CENTER-TAP TYPE SCHOTTKY BAKEUER DIODES Absolute Maximum Ratings (TA=25°C) Type No. V rm Io If s m (V ) (A) (A) with Fin SFPB-52 20 1.0 Vf Max. @ iF (V ) 30 0.47 SFPB-62 20 2.0 SFPB-72

ed7 diode

Abstract: 2DI50M-120
Contextual Info: 2DI50M-1 20 50A / ' 7 — \ ~7 '•/'J’ TsÇ I 3.—JU : Outline Drawings POWER TRANSISTOR MODULE Features • • High A rm Short Circuit Capability • h F E *''S v.' High D C C urrent Gain • ~7l) — t M V>9'9*A — KftflR Including Free W heelin g Diode

SG238D

Abstract: SY438D
Contextual Info: SEC ELECTRON DEV,CE PRELIMINARY SPECIFICATION / LIGHT EMITTING DIODE / SG238D FASHION LAMP Green -N E P O C SERIES DESCRIPTIO N The SG238D is a fu ll resin-molded LED lamp and has a rectangular fla t face w hich em its b rillia n t green lig h t u n ifo rm ly . It is

4753A

Abstract: 1N4728 1N4764 DO-213AB MLL4728 MLL4728A MLL4729A MLL4731A MLL4764
Contextual Info: M LL4728 thru M LL4764 Micro/semi Corp. The diode experts SC O T T SD A L E , A Z F o r m o re in fo rm a tio n call: 602 941-6300 SANTA A N A , CA DESCRIPTION/FEATURES • LEADLESS PACKAGE FOR SURFACE M O UN T TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING

SM1.4KESD10

Contextual Info: tiíSñtS 00Q21Ô7 SII • STE D niCROSEMI CORP HSC The diode experts SANTA A N A, CA SCOTTSDALE, A Z For m ore in fo rm a tio n call: 602 941-6300 SM1.4KESD5.0 thru SM1.4KESD170A S U R F A C E Features 1. Protects Sensitive Circuits From Short Duration Fast Rise Time Transients such as

IN5653A

Abstract: diode 1n5658 N5664A IN563 IN5653 2B2 zener diode 1N5G62 in5657a 1N5631 in5645a
Contextual Info: 1N5629 thru Micro/semi Corp. The diode experts SANTA ANA. CA 1N5665 SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 6 0 2 94 1-6 3 0 0 FEATURES TRANSIENT ABSORPTION ZENER • PROTECTS CIRCUITS FROM HARMFUL TRA N SIEN TS • ABSO RBS I M S TRA N SIEN TS UP TO 1500 WATTS

BB620

Contextual Info: 7iiQô2b ooböaai 4 ^ IPHIN BB620 VHF VARIABLE CAPACITANCE DIODE The B B 6 2 0 is a V H F .¿ole capacitance d iod e in planar te ch n o lo g y w ith a very high capacitance ratio intended fo r V H F -b a n d A up to 160 M H z in all-band tuners. T he diode is encapsulated in a he rm etically sealed S O D 1 2 3 envelope suitable fo r surface m ounting.

PHP120

Abstract: PHP24 PHP250 PHP440 PHP500 PIP500 Scans-006293 MIL-STD-1399
Contextual Info: I / Microisemi Corp. SANTA ANA. CA / ' The diode experts SCOTTSDALE, A 2 F a r m o re in fo rm a tio n call: ( 602 941-6300 PH P8.4 thru P H P 50 0 and P IP 8.4 thru P IP 5 0 0 FEA TU RES • 7.500 AND 15.000 W ATTS PEAK PU LSE POWER DISSIPATION • AVAILABLE IN RANGES FROM B.4 TO 500 VOLTS

DF30B

Contextual Info: SANSHA ELECTRIC NFG CO 37 E D 7 C C] 1 S 4 3 6 0 0 0 0 0 b m 1 ~ * I S e 'mj DIODES ISOLATED TYPE 3 PHASE DIODE MODULE lo c V rrm TYPE If s m V fm Ir rm V is o . mA V R M S) Tj ‘C 3 25 00 2500 4 R t h jc C /W F ig . No. • 150 0 ,6 18 150 0 .6 18 2500 150

31140

Abstract: R K J 0822
Contextual Info: 40&CDM M an A M P com pany Monolithic PIN Diode Switches MA4SW100,200,300 V 2.00 Features • B ro a d b a n d P erfo rm a n ce: S p e cifie d 1 -18 G H z U sab le 1 -2 6 G H z SPST , S P D T U sab le 1 -20 G H z (S P 3 T ) • In se rtio n Loss 1 .2 d B to 18 G H z

SW TACT SPST

Contextual Info: JUfaCim m a n A M P com pany Monolithic PIN Diode Switches MA4SW100, 200, 300 Features • B ro a d b a n d P erfo rm a n ce: S p e cifie d 1-18 G H z I 's a b le 1-26 G H z S l’ST. SP O T , U sa b le 1-20 G H z (S P 3 T ) K • In sertio n I.oss 1.2 d B to IK G H z

IN3027B

Abstract: IN3048B IN3034B diode 1N3048b ZENER 1 WATT 6.8V in3020b in3022b in3033b 1N3020B 1N3016B
Contextual Info: 1N 3016B thru 1 N 3 0 5 1B Microlsemi Corp. ' The diode experts SA NTA A NA, CA SCOTTSDA J.E, A Z / F o r m ore in fo rm atio n call: 602 9 4 I-6 3 0 0 FEATURES • ZENER VO LTA G E RANGE: 6.8 V TO 200V • 1N3016B TH RO UG H 1N3051B H A VE JA N , JA N T X , and J A N T X V Q U A L IF IC A T IO N S

diode 1334

Abstract: G 1754 diode 1334 diode KBPC3027 KBPC3047 KBPC3067 VK227 VK247 VK267
Contextual Info: 30 Amp Avalanche Bridges KBPC3027 - KBPC3067 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D E G H J _ 1.140 .452 .490 .732 .677 -.425 .693 .620 .188 .620 .525 29.00 11.50 12.45 18.60 17.20 -17.10 14.80 1.14 10.80 17.54 15.75

photodiode die WAFER

Abstract: TIA AGC application note
Contextual Info: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. M02011 CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 622 Mbps

3sm diode

Abstract: 3SM* diode
Contextual Info: Schottky Barrier Diod» Axiaf Diode • W B -tfäsH , O U T L IN E DIM ENSIONS Case : Axial S3S6M 60V 3A 25±2 t 0.5 7 -0 ^0.2 0 4 . 4 - 0 .1 25±2 0— 14— 0 • * } £ E i] iti? 3 E i Marking Color code Blue 3SM 62- r ■ SÊfèf? -o v b tz n m ) Date code

HVR-1X 7 diode

Abstract: FMS-3FU HVR-1X 6 diode MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FMPG5F rk36 diode rk14 diode HVR-1X 7 diode RU 3AM HVR-1X diode
Contextual Info: DIODES RECTIFIER DIODES Absolute Maximum Ratings Type No. VRM IO IFSM V (A) (A) Elec. Char. at 25°C VF 200 SFPM-54 400 SFPM-62 200 SFPM-64 Abs. Max. Ratings Type No. Max. @ IF(µA) (V) SFPM-52 IR 0.9 30 1.0 1.0 45 0.98 (A) VRM IO IFSM (V) (A) (A) Max. 10

H11C6

Contextual Info: Optoisotator Specifications H11C4, H11C5, H11C6 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR INCHES MILLIMETERS MIN MAX MIN '"M A X 8 89 62 REF 8 6J T h e H 1 1 C 4 , H 1 1 C 5 a n d H 1 1 C 6 a re g alliu m a rs e n id e , in fr a r e d e m ittin g d io d e s c o u p le d with lig h t activ ated silico n

SHINDENGEN DIODE

Contextual Info: SHINDENGEN ELECTRIC HFG SHE D • 621^307 00004^3 Ibö ■ S H E J ■ O U T L IN E D IM E N S IO N S D15XBD 600V 15A ■ R A T IN G S A b s o lu te Maximum R atin g s * l e# s Item Sym bol S to ra g e Tem perature O pe ra tin g J u n c tio n T em p e ra tu re

jd22

Contextual Info: 7 2 94 62 1 POWEREX 91D 0 1 8 5 4 INC D TI P0ÜJEREX INC ~ T ~ 3 3 -Q ! Q0DiaS4 4 I Single FETMOD Power Modules Id Id m V g s t h (Amps) Voss (Volts) RDS(on) (Amps) (Ohms) (Volts) 100 100 300 300 450 500 0.6 0.6 — — — — gfs (mhos) Pd (Watts)

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

Contextual Info: HUF75337G3, HUF75337P3, HUF75337S3, HUF75337S3S Semiconductor Data Sheet 62A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,