DIODE RM 62 Search Results

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

SFPJ-73

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

5516 DIODE

Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

mcc 55-12

Abstract: mcc 40-12 MCC 65-16 ABB mcc mcc 65-12 MCC 55-08 mcc 55-16 MCC 40 -14io8 ABB mcc 40-12 MCC 40 -12io8
Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-Module D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

MPE-220A

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Laser Diode for DVD-R

Contextual Info: EL6290C e la n te c e l 629oc Loser Diode Driver with Waveform Generator h ig h p e r f o rm a n c e a n a l o g in t e g r a t e d c i r c u i t s Features General Description • Complete programmable laser diode driver The EL6290C is a highly integrated laser diode driver designed to sup­

LR 2703

Abstract: 1SS244 DO-34 ROHM ROHM 1SS244 diode switching do-34 rohm
Contextual Info: 1SS244 Diodes High-voltage switching diode 1SS244 ! Applications ! External dim ensions Units : mm High voltage switching General purpose rectification I Features 1) High reliability. 2) Glass sealed envelope. (MSD) 3) V rm=250V Guaranteed. I Construction

d-215 diode

Abstract: esm 856
Contextual Info: CALIFORNIA MICRO DEVICES ►►►►► PAC DN010 P/ACTIVE SCH O TTKY DIODE MEMORY BUS TERM INATOR Features A pplications • • ♦ • • • • Provides proper bus te rm in a tio n independent o f card loading conditions Schottky diode technology; fast tu rn on

MC34017

Abstract: MC14011B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC34017 A d v an ce In fo rm a tio n TELEPHONE TONE RINGER TELEPHONE TONE RINGER • Complete Telephone Bell Replacement Circuit with M inim um External Components BIPOLAR LINEAR/I2L • On-Chip Diode Bridge and Transient Protection

rba-406b

Abstract: rk36 diode RBA406B RK36 diode schottky AK03 CTB-34M schottky BARRIER diode RK33 DIODE RK14 RK44 SFPB-76
Contextual Info: POWER SCHOTT DIODE iS P H B ' +T+ vs-~ ; -¿1 *h SCHOTTKY BABRIEB DIODES CENTER-TAP TYPE SCHOTTKY BAKEUER DIODES Absolute Maximum Ratings (TA=25°C) Type No. V rm Io If s m (V ) (A) (A) with Fin SFPB-52 20 1.0 Vf Max. @ iF (V ) 30 0.47 SFPB-62 20 2.0 SFPB-72

Equivalent ana 650

Abstract: 3.3V ZENER DIODE zener Diode SMB ana 650 1N5956B SMBG5913 SMBG5914 SMBJ5956B
Contextual Info: SMBG5913 thru SMBG5956B and SMBJ5913 thru SMBJ5956B MicrosemiCorp. ^ Tho diode experts / SANTA A N A , CA SCOTTSDALE, A Z For m ore in fo rm ation call: 602 941-6300 SILICON 1.5 WATT ZENER DIODES SURFACE MOUNT Features • • • • SURFACE MOUNT EQUIVALENT TO 1N5913THRU 1N5956B

FME-2104

Abstract: FME-2106 FME-210B FME-220A FME-220B FME-230A FME-230B FME-24H SFPE-64 SFPJ-53
Contextual Info: 4-4 Schottky Barrier Diode Low IR “E Series” ●Surface-Mount V RM V 40 IF (AV) (A) 2.0 Package Axial (Body Diameter/Lead Diameter) Surface-Mount (SFP) Part Number IFSM (A) 50Hz Single Half Sine Wave SFPE-64 40 Tj (°C) T stg (°C) -40 to +150 VF (V)

smd diode f54

Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040

1N5523 DO7

Abstract: 1n5525
Contextual Info: 1N5518 thru Mierosemi Corp. 1N5546 $ The diode experts SANTA ANA, CA SCOTTSDALE, AZ For m ore in fo rm a tio n call: 6 02 941-6300 FEATURES LOW VOLTAGE AVALANCHE D IO D E S DO-7 • LOW ZENER NOISE SPECIFIED • LOW ZEN ERIM PED AN C E • LOW LEAKAGE CURRENT

ed7 diode

Abstract: 2DI50M-120
Contextual Info: 2DI50M-1 20 50A / ' 7 — \ ~7 '•/'J’ TsÇ I 3.—JU : Outline Drawings POWER TRANSISTOR MODULE Features • • High A rm Short Circuit Capability • h F E *''S v.' High D C C urrent Gain • ~7l) — t M V>9'9*A — KftflR Including Free W heelin g Diode

SG238D

Abstract: SY438D
Contextual Info: SEC ELECTRON DEV,CE PRELIMINARY SPECIFICATION / LIGHT EMITTING DIODE / SG238D FASHION LAMP Green -N E P O C SERIES DESCRIPTIO N The SG238D is a fu ll resin-molded LED lamp and has a rectangular fla t face w hich em its b rillia n t green lig h t u n ifo rm ly . It is

1N5007

Abstract: n5993 1fm5
Contextual Info: 1N5985 thru 1N6031 Microsemi Corp. $ The diode expens Í SC O T T SD A L E , A Z F o r m o re in fo rm a tio n call: 602 941-6300 FEATURES • Popular DO-35 Pack ag e — Sm all and Rugged ■ Double Slug Construction ■ Constructed with an Oxide Passivated All Diffused Die

4753A

Abstract: 1N4728 1N4764 DO-213AB MLL4728 MLL4728A MLL4729A MLL4731A MLL4764
Contextual Info: M LL4728 thru M LL4764 Micro/semi Corp. The diode experts SC O T T SD A L E , A Z F o r m o re in fo rm a tio n call: 602 941-6300 SANTA A N A , CA DESCRIPTION/FEATURES • LEADLESS PACKAGE FOR SURFACE M O UN T TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING