DIODE RM 62 Search Results

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

SFPJ-73

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

5516 DIODE

Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-M odule D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

mcc 55-12

Abstract: mcc 40-12 MCC 65-16 ABB mcc mcc 65-12 MCC 55-08 mcc 55-16 MCC 40 -14io8 ABB mcc 40-12 MCC 40 -12io8
Contextual Info: A S E A Û3 BRO üJN/ABB s e m i c o n Netz-Thyristor-Module D I □□4Û3DÛ 7 T - 25-23 Phase control Thyristor-Modules Daten pro Diode oderThyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor V r rm V drm

MPE-220A

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

d-215 diode

Abstract: esm 856
Contextual Info: CALIFORNIA MICRO DEVICES ►►►►► PAC DN010 P/ACTIVE SCH O TTKY DIODE MEMORY BUS TERM INATOR Features A pplications • • ♦ • • • • Provides proper bus te rm in a tio n independent o f card loading conditions Schottky diode technology; fast tu rn on

Honey Technology

Abstract: MCL245 55199
Contextual Info: MCL245 SILICON EPITAXIAL PLANAR DIODE Absolute Maximum Ratings Ta= 25°C Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage V rm 250 V Mean Rectified Current lo 200 mA Maximum Forward Current Ifm 625 mA Surge Forward Current at t<1s and Tj= 25°C

rba-406b

Abstract: rk36 diode RBA406B RK36 diode schottky AK03 CTB-34M schottky BARRIER diode RK33 DIODE RK14 RK44 SFPB-76
Contextual Info: POWER SCHOTT DIODE iS P H B ' +T+ vs-~ ; -¿1 *h SCHOTTKY BABRIEB DIODES CENTER-TAP TYPE SCHOTTKY BAKEUER DIODES Absolute Maximum Ratings (TA=25°C) Type No. V rm Io If s m (V ) (A) (A) with Fin SFPB-52 20 1.0 Vf Max. @ iF (V ) 30 0.47 SFPB-62 20 2.0 SFPB-72

Equivalent ana 650

Abstract: 3.3V ZENER DIODE zener Diode SMB ana 650 1N5956B SMBG5913 SMBG5914 SMBJ5956B
Contextual Info: SMBG5913 thru SMBG5956B and SMBJ5913 thru SMBJ5956B MicrosemiCorp. ^ Tho diode experts / SANTA A N A , CA SCOTTSDALE, A Z For m ore in fo rm ation call: 602 941-6300 SILICON 1.5 WATT ZENER DIODES SURFACE MOUNT Features • • • • SURFACE MOUNT EQUIVALENT TO 1N5913THRU 1N5956B

ed7 diode

Abstract: 2DI50M-120
Contextual Info: 2DI50M-1 20 50A / ' 7 — \ ~7 '•/'J’ TsÇ I 3.—JU : Outline Drawings POWER TRANSISTOR MODULE Features • • High A rm Short Circuit Capability • h F E *''S v.' High D C C urrent Gain • ~7l) — t M V>9'9*A — KftflR Including Free W heelin g Diode

SG238D

Abstract: SY438D
Contextual Info: SEC ELECTRON DEV,CE PRELIMINARY SPECIFICATION / LIGHT EMITTING DIODE / SG238D FASHION LAMP Green -N E P O C SERIES DESCRIPTIO N The SG238D is a fu ll resin-molded LED lamp and has a rectangular fla t face w hich em its b rillia n t green lig h t u n ifo rm ly . It is

1N5007

Abstract: n5993 1fm5
Contextual Info: 1N5985 thru 1N6031 Microsemi Corp. $ The diode expens Í SC O T T SD A L E , A Z F o r m o re in fo rm a tio n call: 602 941-6300 FEATURES • Popular DO-35 Pack ag e — Sm all and Rugged ■ Double Slug Construction ■ Constructed with an Oxide Passivated All Diffused Die

4753A

Abstract: 1N4728 1N4764 DO-213AB MLL4728 MLL4728A MLL4729A MLL4731A MLL4764
Contextual Info: M LL4728 thru M LL4764 Micro/semi Corp. The diode experts SC O T T SD A L E , A Z F o r m o re in fo rm a tio n call: 602 941-6300 SANTA A N A , CA DESCRIPTION/FEATURES • LEADLESS PACKAGE FOR SURFACE M O UN T TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING

SM1.4KESD10

Contextual Info: tiíSñtS 00Q21Ô7 SII • STE D niCROSEMI CORP HSC The diode experts SANTA A N A, CA SCOTTSDALE, A Z For m ore in fo rm a tio n call: 602 941-6300 SM1.4KESD5.0 thru SM1.4KESD170A S U R F A C E Features 1. Protects Sensitive Circuits From Short Duration Fast Rise Time Transients such as

IN5653A

Abstract: diode 1n5658 N5664A IN563 IN5653 2B2 zener diode 1N5G62 in5657a 1N5631 in5645a
Contextual Info: 1N5629 thru Micro/semi Corp. The diode experts SANTA ANA. CA 1N5665 SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 6 0 2 94 1-6 3 0 0 FEATURES TRANSIENT ABSORPTION ZENER • PROTECTS CIRCUITS FROM HARMFUL TRA N SIEN TS • ABSO RBS I M S TRA N SIEN TS UP TO 1500 WATTS

Contextual Info: 3 E Z 3.9D 5 thru 3EZ200D5 Microsemi Corp. $ The û«xa» experts SCOTTSDALE, AZ For more information call: m m s m im s m 602 941-6300 SILICON 3 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3 .9V to 200 V • HIGH SURGE CURRENT RATING • 3 W ATTS DISSIPATION IN A N O RM ALLY 1 W ATT PACKAGE

BB620

Contextual Info: 7iiQô2b ooböaai 4 ^ IPHIN BB620 VHF VARIABLE CAPACITANCE DIODE The B B 6 2 0 is a V H F .¿ole capacitance d iod e in planar te ch n o lo g y w ith a very high capacitance ratio intended fo r V H F -b a n d A up to 160 M H z in all-band tuners. T he diode is encapsulated in a he rm etically sealed S O D 1 2 3 envelope suitable fo r surface m ounting.

PHP120

Abstract: PHP24 PHP250 PHP440 PHP500 PIP500 Scans-006293 MIL-STD-1399
Contextual Info: I / Microisemi Corp. SANTA ANA. CA / ' The diode experts SCOTTSDALE, A 2 F a r m o re in fo rm a tio n call: ( 602 941-6300 PH P8.4 thru P H P 50 0 and P IP 8.4 thru P IP 5 0 0 FEA TU RES • 7.500 AND 15.000 W ATTS PEAK PU LSE POWER DISSIPATION • AVAILABLE IN RANGES FROM B.4 TO 500 VOLTS

Contextual Info: MOTORCLA SC DIODE S/ OP TO 14E D § k3L72SS o o flo c n a s I _ Order this dita sheet by MPZ4728/D MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA Designer's Data Sheet 1.0 W att S u rm e tic 30 S ilic o n Zener D io d e s . . a complete series of 1,0 watt zener diodes with limits and operating characteristics