DIODE PJO Search Results

ALPs modulator

Abstract: BY438 diode BY438 JI75 TRANSISTOR D 819
Contextual Info: SbE ]> 7110ÖSL 0 040 45 1 SOfl • P H I N BY438 P H IL IP S INTERNATIONAL T-OI-is SbE D PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television receivers. The

aml 10 series

Abstract: Scans-001779
Contextual Info: DAF 40 DAF 4 0 Diode-R.F. pentode battery valve The D A F 40 is a diode-pentode for b a tte ry operation; th e p entode section is designed for R .F . an d I.F . am plification, th e diode section for d etectio n a n d A.G.C. A b a tte ry w ith a nom inal voltage of 1.4 V can be used for th e

marking v6 07 diode

Contextual Info: BAP64-02 Silicon PIN diode Rev. 8 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD523 ultra small plastic SMD package. 1.2 Features and benefits       High voltage, current controlled

Contextual Info: BAP64-02 Silicon PIN diode Rev. 9 — 15 December 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD523 ultra small plastic SMD package. 1.2 Features and benefits       High voltage, current controlled

sfh450

Contextual Info: SIEMENS Plastic Fiber O ptic T ransm itte r Diode Plastic C onnector Housing SFH 450 SFH 450V Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling

Contextual Info: FEATURES PIN CONFIGURATION • • • • • DTL/TTL COMPATIBLE INPUTS 1103 AND 1103A RAM COMPATIBLE OUTPUTS HIGH OUTPUT SOURCE/SINK CURRENT CAPABILITY — 100mA HIGH SPEED — 45ns MAX. tD WITH 200 pFd LOAD INPUT AND OUTPUT DIODE CLAMPING TO MINIMIZE LINE RE­

SFH415 applications

Contextual Info: SFH 415 SFH 416 SIEMENS GaAs Infrared Emitter Dimensions in inches mm C t»p Position .217(5.5) .024(0.6) .016(0.4) .100(2.54) sp a ri a^ng T (1.ÔL, (12p .071(14 .047 T A. Cathode (Diode) ' Collector (Transistor) Approx. weight 0.4g CoHector SFH416 FEATURES

Z18-2

Contextual Info: SIEMENS LR Z181 LR Z182-189/180 SINGLE 2 to 10 DIODE ARRAYS Red Miniature LED Lamp Package Dimensions in Inches mm .094 (2.4) .083 (2.1 f 1 _.112 (2.84) .088 (2.24) r~ \ 086 (2 2) .079 (2.0) F .079 {2.0) .071 (1.8) .1 2 6 (3 .2 ) . 1 1 0 ( 2 .8 ) .378 (9.6) _

RRMH

Abstract: RRME selenium rectifier RRM27 asea RRME RRMH ASEA RRM17 "selenium rectifier" 8 pin relay device 220 volt 4 uf 400 volt ac capacitor
Contextual Info: Catalogue RK 78-1 E E d itio n 2 F e b ru a ry 1973 F ils R. p a rt 2 Plug-in components Capacitor, resistor and diode devices V e rs io n s a n d m o u n tin g C o n te nts In th e A S E A pJog-in relay -system, d iffe re n t If a p o sitio n id e n tific a tio n p la te is re q u i­

Contextual Info: 3030738 E G & G R E T IC O N 91D E G & G RETICON ~TL 02624 D! DE^J 3DB073Û j-41-55 QDG2bH4 R00720B RETICON Circular Array General Description SUBSTRATE IPOS 28 bC t[ 27 eno t[ The R00720B is a high-resolution circular solid-state scan­ ner designed specifically for applications such as focusing,

SFH9101

Abstract: IC 9102 SFH9102
Contextual Info: SIEMENS SFH9101/9102 Light Reflection Switch in SMT Package Preliminary Data Dimensions in inches mm .165(4.2) .149 (3.8) .006(0.15) .005 (0.13) 0 -.004 (0 - . 1) .020 f0 .5 )_ J L .0 1 2(0 .3 )~ n r*.228 (5.8) -.050(1.2.7) spacing Anode 1 1 J 6 Cathode

Contextual Info: SKM 600GB066D Absolute Maximum Ratings Symbol Conditions IGBT 123H $R * KL M2 C2 $R * J^L M2 $ ,5& * KLM2@ <'/&55 .- &%785& 59&(8=8&E APP 1 ^AP D $( * _P M2 L^P D _PP D aKP 1 $R * JLP M2 A U5 $( * KL M2 ^PP D $( * _P M2 LJP D _PP D LPP D $:R N OP Q J^L M2

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of FHP2N40E GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

T082

Abstract: T092 ZSM300 aaor
Contextual Info: SUPPLY VOLTAGE ZSM300 MONITOR DEVICE DESCRIPTION FEATURES The ZSM300 is a three terminal under voltage monitor circuit for use in microprocessor systems. The threshold voltage of the device has been sat to 2.63 volts making it ideal for 3 volt circuits. ●

LTC16251

Abstract: K/LTC16251 TOROIDS transformer 1625CG
Contextual Info: L in t A B _ LTC1625 TECHNOLOGY |\j0 Rsense Current M ode Synchronous Step-Down Switching Regulator FEATURES D€SCRIPTIOfl • ■ ■ ■ The LTC 1625 is a synchronous step-down switching regulator controller that drives external N-Channel power

amplifier circuit diagram techno 5a

Abstract: TOROIDS transformer 16SA100M T OSCON 3V02
Contextual Info: L lfltA R _ u£i<a5 TECHNOLOGY No Rsen se Current M o d e Synchronous Step-D ow n Sw itching R eg u lato r FCflTURCS D € S C R IP T IO n • Highest Efficiency Current Mode Controller ■ No Sense Resistor Required ■ Stable High Current Operation

Contextual Info: Final E le c tric a l S p e c ific a tio n s r r u n TECHNOLOGY e A B _ LTC1625 No R s e n s e C urre nt M o d e Synchronous S tep-D ow n S w itching R egulator J u ly 1 9 9 8 F€RTUR€S DCSCRIPTIOn • Highest Efficiency Current Mode Controller

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

high efficiency current mode flyback converter

Abstract: 36Vto 4412DY 55206-A2 N CHANNEL MOSFET MIL GRADE 55380-A2 NEC NeoCap AVXTPSD107M010R0065 lt1339 application note pc 817 mosfet gate drive
Contextual Info: Final Electrical Specifications r r u v _ LTC1775 m TECHNO LO G Y High Pow er No R s e n s e C urrent M o d e Synchronous S tep-D ow n S w itching R egu lator FCnTURCS D iS C R IP T IO n • Highest Efficiency Current Mode Controller ■ No Sense Resistor Required

Contextual Info: SIEMENS LD 261 LD 262—269/260 s in g l e d io d e arrays Infrared Emitters Dimensions in inches mm APPLICATIONS • Miniature photointerrupters • Punched tape-readers • Industrial electronics • For control and drive circuits DESCRIPTION The LD260-269 series, GaAs infrared emitting diodes,

BA4422AN

Abstract: ba4422 sumida FM BPWB6A IC ba4422an FEM10C-2F6 sumida bpmb6a SFE10.7MA5 soshin bpf sumida ift coil
Contextual Info: # — t V # ffl IC /IC s for Audio Applications ROHM CO LTD 40 E D E l B A 4 4 2 2 A M BA4422AN T f l E S T n 00044=13 1 HRHM- FM /TV Front End 1£ W í \ f ' ¡ i /D im e n s io n s U nit : mm BA4422AN ( i , FM 7 O > h X > KfflO) ^ S 'J '> -y ? ICT'

diode matrix rom 4 x 4

Abstract: S1460AF diode pjo PJO 199 diode matrix rom
Contextual Info: Seiko Instruments Inc. Semiconductor Division 199 1.6 .7 S-1460AF CMOS one-chip 4-bit microcomputer 1. PHYSICAL DESCRIPTION The S-1460AF, 4 -b it m icrocom puter integrates ROM, RAM , tim er and I/O ports on one chip. Since this m icrocom puter h a s 4 K x 16-bit ROM , dedicated

Contextual Info: r r u TECHNOLOGY n m _ LT1581/LT1581-2.5 1OA, Very Low Dropout Regulator KfìTUlKS DCSCRIPTIOn • Low Dropout, 430mV at 10A Output Current ■ Fast Transient Response ■ Remote Sense ■ 1 mV Load Regulation ■ Fixed 2.5V Output and Adjustable Output