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    DIODE PACKAGE OUTLINE Search Results

    DIODE PACKAGE OUTLINE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQ5
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Datasheet
    54ACT825/QKA
    Rochester Electronics LLC 54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP PDF Buy
    TPH1400CQ5
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 32 A, 0.0141 Ω@10 V, High-speed diode, SOP Advance(N) Datasheet
    TPH1100CQ5
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 49 A, 0.0111 Ω@10 V, High-speed diode, SOP Advance(N) Datasheet
    CEZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOD-523 Datasheet

    DIODE PACKAGE OUTLINE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MA4E1338 Series Silicon Medium Barrier Schottky Diode Features V 3.00 Package Outlines RF & Microwave Medium Barrier Silicon 8 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Package


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    MA4E1338 OT-23 OT-143 OT-323 OD-323 PDF

    Contextual Info: 1T369 sony, Silicon Variable Capacitance Diode Description The 1T369 is a super miniature package variable capacitance diode for a wide-band CATV. Package Outline Unit : mm • 0.9 * w C .3-W « Features • Super miniature package • Small series resistance


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    1T369 1T369 E92903Â PDF

    Contextual Info: 1T363 sony, Silicon Variable Capacitance Diode Package Outline Description The 1T363 is a variable capacitance diode designed for electronic tuning o f CATV tuner. A miniature package has been adopted to allow tuner miniaturization, while maintaining the same


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    1T363 1T33C. 1T363 PDF

    diode b81

    Abstract: b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009
    Contextual Info: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE


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    5V/10A) diode b81 b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009 PDF

    free IR circuit diagram

    Abstract: diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent
    Contextual Info: 1SS356 Surface Mount Band Switching Diode Band Switching Diode P b Lead Pb -Free 100m AMPERES 35 VOLTS Features: * Low Diode Capacitance : 1.2pF(Max.) * Low Diode Forward Resistance : 0.9Ω(Max.) * Low Reverse Current : IR = 10nA(Max.) * Small outline Surface mount SOD-323 Package


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    1SS356 OD-323 OD-323 MIL-STD-202 05-Dec-05 100MHz free IR circuit diagram diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent PDF

    Contextual Info: Formosa MS Switching Diode 1N4148 List List. 1 Package outline. 2 Features. 2


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    1N4148 MIL-STD-750D METHOD-1026 JESD22-A102 METHOD-1051 METHOD-1056 1000hrs. PDF

    Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


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    RJS6005TDPN-EJ R07DS0899EJ0101 PRSS0003AN-A O-220AB-2L) PDF

    Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


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    RJS6004WDPK R07DS0897EJ0200 PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


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    RJS6005WDPK R07DS0901EJ0200 PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


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    RJS6005WDPK R07DS0901EJ0201 PRSS0004ZE-A PDF

    1N4150

    Abstract: diode 1n4150
    Contextual Info: Formosa MS Switching Diode 1N4150 List List. 1 Package outline. 2 Features. 2


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    1N4150 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. 1N4150 diode 1n4150 PDF

    1T33C

    Abstract: tv-catv tuner 1T363
    Contextual Info: 1T363 SONY. Silicon Variable Capacitance Diode Unit: mm Package Outline D escrip tio n The 1T363 is a variable capacitance diode designed for electronic tuning of CATV tuner. A miniature package has been adopted to allow tuner miniaturization, while maintaining the same


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    1T363 1T363 1T33C. C1/C28) M-235 1T33C tv-catv tuner PDF

    Contextual Info: SONY SLD402S Preliminary 15W Array Laser Diode Description Package Outline Unit : mm The SLD402S is a high power laser diode with an array structure, which achieves 15W high power. Features • High power Recommended output: Po = 15W • Array structure • Open package


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    SLD402S SLD402S PDF

    MMBZ5221BW

    Abstract: MMBZ5222BW MMBZ5223BW
    Contextual Info: Formosa MS Zener Diode MMBZ5221BW THRU MMBZ5267BW List List. 1 Package outline. 2


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    MMBZ5221BW MMBZ5267BW MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. MMBZ5222BW MMBZ5223BW PDF

    Contextual Info: Formosa MS Switching Diode MMBD914 List List. 1 Package outline. 2 Features. 2


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    MMBD914 MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 METHOD-1031 PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    RJS6004TDPP-EJ R07DS0896EJ0102 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    PRSS0003ZE-A

    Contextual Info: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A


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    RJS6004WDPQ-E0 R07DS0898EJ0101 PRSS0003ZE-A O-247) PRSS0003ZE-A PDF

    RJS6005TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    RJS6005TDPP-EJ R07DS0900EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ PDF

    Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


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    RJS6004TDPN-EJ R07DS0895EJ0101 PRSS0003AN-A O-220AB-2L) PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    RJS6004TDPP-EJ R07DS0896EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    RJS6004TDPP-EJ R07DS0896EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    RJS6005TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    RJS6005TDPP-EJ R07DS0900EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ PDF

    DIODE SMD w9

    Abstract: DIODE smd Wj SOt23 Zener diode smd marking z2 sot
    Contextual Info: SMD Zener Diode BZX84C2V4 THRU BZX84C75 Formosa MS List List. 1 Package outline. 2


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    BZX84C2V4 BZX84C75 MIL-STD-750D METHOD-1026 JESD22-A102 1000hrs. METHOD-1038 METHOD-1031 DIODE SMD w9 DIODE smd Wj SOt23 Zener diode smd marking z2 sot PDF

    Contextual Info: Formosa MS SMD Schottky Barrier Diode BAT42W / BAT43W List List. 1 Package outline. 2


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    BAT42W BAT43W MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038 PDF