DIODE PACKAGE OUTLINE Search Results
DIODE PACKAGE OUTLINE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet | ||
TPH1400CQ5 |
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N-ch MOSFET, 150 V, 32 A, 0.0141 Ω@10 V, High-speed diode, SOP Advance(N) | Datasheet | ||
TPH1100CQ5 |
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N-ch MOSFET, 150 V, 49 A, 0.0111 Ω@10 V, High-speed diode, SOP Advance(N) | Datasheet | ||
CEZ24V |
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Zener Diode, 24 V, SOD-523 | Datasheet | ||
CEZ20V |
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Zener Diode, 20 V, SOD-523 | Datasheet |
DIODE PACKAGE OUTLINE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MA4E1338 Series Silicon Medium Barrier Schottky Diode Features V 3.00 Package Outlines RF & Microwave Medium Barrier Silicon 8 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Package |
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MA4E1338 OT-23 OT-143 OT-323 OD-323 | |
Contextual Info: 1T369 sony, Silicon Variable Capacitance Diode Description The 1T369 is a super miniature package variable capacitance diode for a wide-band CATV. Package Outline Unit : mm • 0.9 * w C .3-W « Features • Super miniature package • Small series resistance |
OCR Scan |
1T369 1T369 E92903Â | |
laptop keyboard schematicContextual Info: TVS Avalanche Diode Array Unipolar Chip Scale Package SP0504BAC, SP0508BAC, SP0516BAC Transient Voltage Suppression Avalanche Diode Array in a Chip Scale Package This family of avalanche diode arrays are designed for ESD protection and is offered in an ultra small chip scale package. |
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SP0504BAC, SP0508BAC, SP0516BAC 350mm 152mm 360mm SP0504BAC laptop keyboard schematic | |
Contextual Info: 1T363 sony, Silicon Variable Capacitance Diode Package Outline Description The 1T363 is a variable capacitance diode designed for electronic tuning o f CATV tuner. A miniature package has been adopted to allow tuner miniaturization, while maintaining the same |
OCR Scan |
1T363 1T33C. 1T363 | |
Contextual Info: BAS116 225mW SMD Switching Diode Small Signal Diode Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Case : SOT- 23 small outline plastic package Package |
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BAS116 225mW 150mA OT-23 | |
SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
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5V/10A) 500ns, SD-46 Diode Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006 | |
ultra low forward voltage schottky diode
Abstract: diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
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5V/10A) ultra low forward voltage schottky diode diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004 | |
c81 004
Abstract: Diode C81 004 Schottky diode low voltage high current C81 diode diode color code diode "Power Diode" 20A schottky diode 60V 5A SC-46 ERA81-004
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5V/10A) c81 004 Diode C81 004 Schottky diode low voltage high current C81 diode diode color code diode "Power Diode" 20A schottky diode 60V 5A SC-46 ERA81-004 | |
schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
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5V/10A) 500ns, schottky diode 60V 5A 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004 | |
diode b81
Abstract: b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009
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5V/10A) diode b81 b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009 | |
diode
Abstract: SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
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5V/10A) diode SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004 | |
zener diode pin configuration
Abstract: izrm Zener Diode SOT-23 CZMA27 CZMA27V
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CZMA27V OT-23 CZMA27 /50ms zener diode pin configuration izrm Zener Diode SOT-23 CZMA27 CZMA27V | |
free IR circuit diagram
Abstract: diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent
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1SS356 OD-323 OD-323 MIL-STD-202 05-Dec-05 100MHz free IR circuit diagram diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent | |
smd L21
Abstract: BAS29 BAS31 BAS35
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ISO/TS16949 OT-23 BAS29, BAS31, BAS35 BAS29 BAS31 BAS35 BAS29 BAS31 smd L21 | |
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diode 1N914B
Abstract: 1N914B
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1N914B MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. diode 1N914B 1N914B | |
Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A |
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RJS6005TDPN-EJ R07DS0899EJ0101 PRSS0003AN-A O-220AB-2L) | |
Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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RJS6004WDPK R07DS0897EJ0200 PRSS0004ZE-A | |
Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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RJS6004WDPK R07DS0897EJ0100 PRSS0004ZE-A | |
Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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RJS6005WDPK R07DS0901EJ0200 PRSS0004ZE-A | |
Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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RJS6005WDPK R07DS0901EJ0201 PRSS0004ZE-A | |
Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material : Silicon Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A |
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RJS6005TDPN-EJ R07DS0899EJ0100 PRSS0003AN-A O-220AB-2L) | |
Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A |
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RJS6005WDPK R07DS0901EJ0100 PRSS0004ZE-A | |
1N4150
Abstract: diode 1n4150
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1N4150 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. 1N4150 diode 1n4150 | |
Contextual Info: Formosa MS Switching Diode 1N914B List List. 1 Package outline. 2 Features. 2 |
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1N914B MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 METHOD-1021 |