DIODE ON 832 Search Results

E3P102

Abstract: e3p1 e3p10
Contextual Info: NTMSD3P102R2 FETKY P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF

XP152A12C0MR

Contextual Info: Power MOS FET ◆P-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance : 0.3Ω max ●Cellular and portable phones ◆Ultra High-Speed Switching ●On-board power supplies ◆Gate Protect Diode Built-in ●Li-ion battery systems

Contextual Info: Bulletin I2068 rev. D 09/06 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features 600A High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics

Contextual Info: Bulletin I2068 rev. D 09/06 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features 600A High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics

S15C

Abstract: S20C SD603C
Contextual Info: Bulletin I2068 rev. C 04/00 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 600A 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics

S15C

Abstract: S20C SD603C 6.C DIODE
Contextual Info: Bulletin I2068 rev. D 09/06 SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features 600A High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics

1885A

Abstract: diode d707 ka s15 S15C S20C SD603C D-712 B-43, PUK weight
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I2068/B SD603C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 600A 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics

1N5913

Abstract: 1N5956B J-STD-020B 5956B HSMBJ5913-5956B 5951D
Contextual Info: HSMBJ5913 thru HSMBJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The HSMBJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC

Contextual Info: SMAJ5913 thru SMAJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The SMAJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC

do-214ac footprint

Abstract: 1N5913 J-STD-020B MIL-PRF19500 SMAJ5913 SMAJ5956 1N5956B
Contextual Info: SMAJ5913 thru SMAJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The SMAJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC

3 Watt Zener Diode

Abstract: zener diode 3 watt a 220 1N5913 1N5956B J-STD-020B
Contextual Info: HSMBJ5913 thru HSMBJ5956, e3 SILICON 3.0 Watt ZENER DIODE SCOTTSDALE DIVISION PACKAGE The HSMBJ5913-5956B series of surface mount 3.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by suffix letter on the part number. It is equivalent to the JEDEC

Contextual Info: SD603C.C Series Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 600 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 2200 V • High current capability • Optimized turn-on and turn-off characteristics

skiip 832 gb 120

Abstract: skiip 832 gb 120 000c SKIIP CASE S4 diode S4 05 SKIIP832GB
Contextual Info: SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

skiip 832 gb 120

Abstract: SKIIP832GB
Contextual Info: SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C

skiip 832 gb 120 000c

Abstract: skiip 832 gb 120 skiip gb 120 S3 diode SKIIP832GB skiip+832+gb+120+000c
Contextual Info: SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

IRF830

Abstract: IRF830.831 reliability irf830 diode on 832 IRF830-3 power MOSFET IRF830
Contextual Info: N-CHANNEL POWER MOSFETS IRF830/831/832/833 FEATURES • • • • • • • TO-220 Lower Rqs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Si4814DY

Abstract: Si4814DY-T1-E3 IDM-40 Si4814BDY-T1-E3
Contextual Info: 勝特力科技 886-3-5753170 百年電子 86-755-83289224 Http://www.100y.com.tw Specification Comparison Vishay Siliconix Si4814BDY vs. Si4814DY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET with Schottky Diode SO-8 Identical Part Number Replacements:

LA 6520

Abstract: 617 connector OD-8324 diode 33D Connector MTTF
Contextual Info: C ELECTRONICS INC ST L4E7S2S 00ÜS53G Ö INECE T- 41-07 NEC Fiber Optic Devices OD-8324- LD Module OD-8324 is designed to couple ID Laser Diode output light efficiently to optical fiber. PIN photodiode is installed in OD-8324 for APC (Automatic Power Control) and moni­

FS830

Contextual Info: N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • L ow e r R d s ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower Input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: C ELECTRONICS INC L4E7S2S ST 00ÜSS3D Ö I NECE T -41-07 NEC Fiber Optic Devices OD-8324- LD Module OD-8324 is designed to couple ID Laser Diode output light efficiently to optical fiber. PIN photodiode is installed in OD-8324 for APC (Automatic Power Control) and moni­

IRFS830

Abstract: IRFS831 IRFS832 IRFS833 rectifier 832
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^1,4142 0G173Ô4 Tñ3 ■ SMGK N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance

8322 Series

Abstract: 8322 mosfet
Contextual Info: POWER SUPPLY S-8321/8322 Series SMALL PACKAGE STEP-UP SWITCHING REGULATOR Consisting of a reference voltage source, an oscillation circuit, a power MOSFET and a comparator, the output voltage of these devices are fixed internally. Shutdown function is available. The current consumption is drastically minimized

IRFP430

Abstract: IRF830.831
Contextual Info: IRF830/831/832/833 IRFP430/431/432/433 N-CHANNEL POWER MOSFETS FEATURES TO -220 • L o w e r R d s ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

sfb455

Abstract: sn76881 diode 937 ke sn7689 sn76751n 752N
Contextual Info: V iT e x a s I n strum en ts LIMITED MAMUFACTUMM6 SPECIFICATION APRIL 2, 1980 TEXAS INSTRUMENTS LIMITED TENTATIVE SPECIFICATION 30 CHANNEL REMOTE CONTROL TRANSMITTER RES, 002 93 2 SN76742N SN76752N FORMERLY SN76831N16/832N16 THIS DESCRIPTION IS INTENDED ONLY FOR ENGINEERING EVALUATION