diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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ma40401ma40402ma40404ma40405+12ma40406ma40408diode cross referenceschottky diode cross referencemv3110ah513ah761ah512impatt diodegunn diodeah370dmk-6606
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.120-80 uns
Abstract: 280/buss 2A
Contextual Info: Johanson Phasa-Trim# Adjustable Microwave Diode Holders 3 l©T^p description Johanson Microwave Diode Holders are an efficient and inexpensive means of securing and tuning microwave diodes into precise attitudes for optimum circuit performance. The self
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h6951fax-201-334-2954120-80 uns280/buss 2a |
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zener diode 1N PH 48
Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:
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bzx83bzx97bzx98bzy97+15bzd10bzw22bzv40500mwdo-35zener diode 1n ph 48zener diode 1n ph 531n3020-1diodo zener wdiodo zener c 18 ph1n1743diode ziner1n4202st 41 diodo zener1n32b
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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hmxr-500113001 yf 09 transistorhp 5082 70005082-0825+633150a2n6838hxtr 3101hxtr 3101 transistor5082-2815hsch-1001
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492
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DSAIH0002554
Contextual Info: B K C IN T E R N A T IO N A L 03E D | 117^03 GQODEQ7 Type No. 1 N571 7 T '0 3 - 0 7 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption
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mil-s-19500dsaih0002554 |
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Contextual Info: 1 N 5 7 2 8 thru Microsemi Corp. 1 N f The diode expens 5 7 5 7 S C O r rS D A L E , A l F of m ore inform ation call: 602 94I-630Ö FEATURES • ZENER VOLTAGE 4.7 TO 75 V SILICON 400 mW ZENER DIODES • SMALL RUGGEO DOUBLE SLUG CONSTRUCTION DO-35 • CONSTRUCTED WITH AN OXIDE PASSIVATED ALL OIFFUSED DIE
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94i-630do-355729b375-inches+1n5757
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C68001
Abstract: 1N5712 1N5712 JANTX CI 4011 N5712 JANTXV1N5712 1N5712 JANTXV C-68001
Contextual Info: SCHOTTKY SWITCHING DIODE MILITARY APPROVED M IL-S -19500/445 H E W L E T T ^ PA CK ARD COMPONENTS JAN 1N5712 JANTX mm m m 15712 Features LOW TURN-ON VOLTAGE Description /Applications Maximum Ratings at T he J A N S e rie s 1 N 5 7 1 2 is an e p ita x ia l, p la n a r p a s s iv a te d
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1n5712mil-s-19500/445n5712mll-s-19500/445+101071e2036e1071g33madcc680011n5712 jantxci 4011jantxv1n57121n5712 jantxvc-68001
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impatt diode
Abstract: impatt DIODE n57 varian
Contextual Info: >•} V 439805 '7 5 À 0 2 8 0 I VAR I AN ELECTRON Ufc V LL t 0 7 - ./ Series GALLIUM AR SE NI DE P U L S E D IMP ATT DIODES 8-15 GHz 15W, peak FEATURES OU TLI NE DRAWING C A S E N57 • High peak output - 15 W at 9 GHz • 14 W at 11 GHz 10 W at 1 4 GHz
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impatt diodeimpattdiode n57varian |
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Contextual Info: LITTON IND/LITTON SOLID SbE D 5544200 ODDQMTb SÔD • LITT J Z - ([ ■ GUNN DIODES HIGH FREQUENCY 22 to 110 GHz FEATURES • • • • • • GaAs and InP Devices High Efficiency Low Package Parasitics High Reliability Low FM and AM Noise Good Power and Frequency Stability
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100nsec |
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A979
Abstract: 9789A A7628 UDN5741M UDN5742M UDN5743M UDN5744M GP-009
Contextual Info: ALLEGRO MICROSYSTEMS INC 33E D D5D433Ô G0GS21S SERIES - T - s z - n ALGR • ■ DUAL PERIPHERAL/POWER DBIVERS TRANSIENT-PROTECTED OUTPUTS — Peripheral and pow er drivers com bining dual logic gates, highcurrent saturated output transistors, and transient-suppression diodes
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q5d433g0gs21sudn5742m-9790b+8-7900ba9799789aa7628udn5741mudn5743mudn5744mgp-009
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UDN5707A
Abstract: Power Drivers UDN-5703A UDN-5707A UDN-5733A UDN5700A
Contextual Info: SERIES UDN-5700A QUAD PERIPHERAL/POWER DRIVERS SERIES UDN-5700A QUAD 2-INPUT PERIPHERAL/POWER DRIVERS —Transient-Protected Outputs FEATURES: • Fo u r Log ic Types • D T L/ T T iy P M O S / C M O S C o m p a tib le Inpu ts • Low In p u t C u rre n t
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udn-5700a16-leadudn5707apower drivers+4udn-5703audn-5707audn-5733audn5700a
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Contextual Info: 5 7 0 3 wo 5706 QUAD 2-INPUT PERIPHERAL/POWER DRIVERS -TRANSIENT-PROTECTED OUTPUTS These 16-lead quad 2-input peripheral/power drivers are bipolar monolithic integrated circuits containing AND or OR logic gates, highcurrent switching transistors, and transient-suppression diodes
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udn5703a16-leadudn5700a-7628c |
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gunn diodes
Abstract: VSA-9210 gunn diode varian x-band gunn diode n34 zener diagram of gunn diode Gunn diode x band gunn diode gunn diode x band radar yig oscillator 002
Contextual Info: FEATURES • LOW FM AND AM NOISE • LOW VOLTAGE OPERATION • OPERATION TO 60 GHz • HIGH RELIA BILITY DESCRIPTION V a ria n G unn-effect diodes a re g a lliu m -arsen id e d ev ices fo r con verting low -voltage d -c pow er d ire c tly to m icrow ave frequency pow er. They
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gunn diodesvsa-9210gunn diode varianx-band gunn diode+6n34 zenerdiagram of gunn diodegunn diodex band gunn diodegunn diode x band radaryig oscillator 002
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marking 2U diode t5
Abstract: diode hp 2800 hp 2800 diode diode hp 2835 schottky schottky diode marking A7 marking 2U diode C3 SOT23 HSMS2820 B7 SOT23 HSMS-2820
Contextual Info: rh p % H E W L E T T ftX fl PA CK A RD Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Package Lead Code Identification • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage A s Low as 0.34 V at 1 mA • Low FIT (Failure in Time)
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hsms-28xxot-23/sot143ot-23ot-143+10marking 2u diode t5diode hp 2800hp 2800 diodediode hp 2835 schottkyschottky diode marking a7marking 2u diodec3 sot23hsms2820b7 sot23hsms-2820
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UDN5752M
Abstract: A7900 UDN5732M A1174 GP-009 GP009
Contextual Info: AL L E GRO MI C R OS Y S T E MS I NC 33E D • 050433Ô 0 Q0 S 2 1 Ô S ■ ALGR DUAL PERIPHERAL AND POWER DRIVER — TRANSIENT-PROTECTED OUTPUTS Com bining dual AND logic gates, high-current switching transistors, and transient suppression diodes in a bipolar m onolithic integrated
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udn5752m-9790b-7900ba7900+4udn5732ma1174gp-009gp009
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UDN5722
Abstract: A7900 UDN-5722M A7626 UDN5722M
Contextual Info: SPRAGUE/SENICOND GR OU P TE 8514 01 9 SPRAGUE^ S E M I C O N D S / ICS D • Ô S 1 3 0 S O □ □ □ 2 b clcï □ 92D 02699 ■ 7^ SERIES U D N -5 72 0 M , U D N -5 74 0 M , U D N-5750 M DUAL PERIPHERAL/POWER DRIVERS D 5 3 -0 SERIES UDN-5720M, UDN-5740M, UDN-5750M
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s130son-5750udn-5720mudn-5740m+7udn-5750m-7900budn5722a7900udn-5722ma7626udn5722m
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IN5158
Abstract: IN5159 1N5779 IN5779 1N578 IN5781 IN5160 IN5792
Contextual Info: i/’ _.’ / i‘ ~“” / ,.a,+ zx’ _P’ r i, I \. :. : :ii‘ : i~<Il 1, :i\ :h $! :. ,\,:,it’,‘. ‘?C 1’ jj I‘rr:\r,“,n? I>‘:. ri’.t, *: ,;: : ii’, i r. * _ -: 8~?1‘< \ * .- ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
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in5783in5789in5784in5790+12in5779in5785in5791in5780in5786in5792in5158in51591n57791n578in5781in5160
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2
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Clock Generator intel atom n450
Abstract: Clock Generator intel atom n470 Intel atom Dual N455 ATOM intel N570 SODIMM DDR3 Mechanical Dimensions BGA559 l atom n450 pin configuration STPC Clock Generator intel atom n455 nm10 n450
Contextual Info: Intel Atom Processor N400 & N500 Series Datasheet - Volume 1 This is volume 1 of 2. Refer to Document Ref# 322848 for Volume 2. June 2011 Revision 003 Document Number: 322847-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,
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clock generator intel atom n450clock generator intel atom n470intel atom dual n455atom intel n570+6sodimm ddr3 mechanical dimensionsbga559l atom n450 pin configurationstpcclock generator intel atom n455nm10 n450
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Contextual Info: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF
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N5766
Abstract: N5752A N5772A N5741A N5766A Agilent N5767a N5745A n5741 Lambda EMI N5742
Contextual Info: Agilent Technologies System DC Power Supply Series N5700 User’s Guide A Legal Notices Agilent Technologies, Inc. 2004 - 2006 No part of this document may be photocopied, reproduced, or translated to another language without the prior agreement and written consent of Agilent
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n5700ocp/488n5766n5752a+8n5772an5741an5766aagilent n5767an5745an5741lambda emin5742
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IN5717
Abstract: IN5718 IN5714 7C3 diode IN5421
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X
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100pfcv830-cv840mv830-mv84gcv1006-16-cv1106-16+11fv1006-16fv1106-16cv1620-cv1650mv1620-mv1650cv1652-cv1666mv1652-mv1666in5717in5718in57147c3 diodein5421
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Thomson Electron Tubes
Abstract: C6878 C4742 M5679 streak camera hamamatsu c5680 M5677 ISO calibration certificate formats ccd detector project C1808-03 C1083
Contextual Info: Universal Streak Camera C5680 Series Measurements Ranging From X-Ray to Near Infrared With a Temporal Resolution of 2 ps The streak camera is an ultra high-speed detector which captures light emission phenomena occurring in extremely short time periods. Not only can the streak camera
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c5680se-171-411046e07aug/2003+10thomson electron tubesc6878c4742m5679streak camera hamamatsu c5680m5677iso calibration certificate formatsccd detector projectc1808-03c1083
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