5729B Search Results

Contextual Info: 1 N 5 7 2 8 thru Microsemi Corp. 1 N f The diode expens 5 7 5 7 S C O r rS D A L E , A l F of m ore inform ation call: 602 94I-630Ö FEATURES • ZENER VOLTAGE 4.7 TO 75 V SILICON 400 mW ZENER DIODES • SMALL RUGGEO DOUBLE SLUG CONSTRUCTION DO-35 • CONSTRUCTED WITH AN OXIDE PASSIVATED ALL OIFFUSED DIE

3h5m

Contextual Info: CA:968 657 >M=D> DG>C 6 AHJF > C@JF@LD><EEP K@<E@? J@E<P ATQ^_\T] 1 EdgXZ WVaVcXZY aViX]^c\ gZaVn 1 69@ XdciVXih hl^iX]^c\ XVeVW^a^in 1 EV^ajgZ gViZ XVc WZ I aZkZa 1 G^\] VbW^Zci Veea^XVW^a^in 1 @aa bZiVa lZaYZY XdchigjXi^dc 1 GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg

Contextual Info: wvx ~8}/~ /2~. x ,351 ~ .+51+7/~|00; 6+|0+* +0+~753 1|-2+7/~ 5+0|; :/7. ~3/0 75|26/+27 68445+66/32 .,zyxx ,?<IJG?H EdgXZ WVaVcXZY S^i] Xd^a igVch^Zci hjeegZhh^dc 54@ XdciVXih hl^iX]^c\ XVeVW^a^in EV^ajgZ gViZ aZkZa XVc WZ aZkZa I G^\] VbW^Zci Veea^XVW^a^in

bc227

Abstract: BC264 3h5m
Contextual Info: 768 ?N>E? EH?D 8 BIKG ? DAKGAME?=FFQ LA=FA@ F=M?DEHC KAF=Q DB;:79 BUR_`]U^ 2 EdgXZ WVaVcXZY aViX]^c\ gZaVn 2 54@ XdciVXih hl^iX]^c\ XVeVW^a^in 2 EV^ajgZ gViZ XVc WZ I aZkZa 2 G^\] VbW^Zci Veea^XVW^a^in 2 @aa bZiVa lZaYZY XdchigjXi^dc 2 GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg

gy924

Abstract: q529
Contextual Info: 768 >M=D> DG>C 8 AHJF > C@JF@LD><EEP K@<E@? @E@>LJH F<BG@LD> J@E<P CA:979 ATQ^_\T] 2 EdgZ WVaVcXZY 2 54@ XdciVXih hl^iX]^c\ XVeVW^a^in 2 EV^ajgZ gViZ XVc WZ aZkZa I 2 G^\] VbW^Zci Veea^XVW^a^in 2 @aa bZiVa lZaYZY XdchigjXi^dc 2 GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg

n572

Abstract: 1N5728 1N5728B 1N5729B 1N5730B 1N5731B 1N5732B 1N5733B 1N5734B 1N5736B
Contextual Info: 1N5728 thru Microsemi Corp. 1N5753 SILICO N 400 mW Z E N E R D IO D E S FEATURES • Z EN E R V O LTA G E 6.8V to 51V • SM A L L RUGGED DOUBLE SLUG CONSTRUCTION DO-35 • CONSTRUCTED WITH AN O XID E PA SSIV A T E D A L L D IFFU SE D DIE ^M AXIMUM R A T I N G S

Contextual Info: 1N5728 thru Microsemi Corp. 1N5757 The d'oa e experts SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 602 94I-6300 FEATURES • Z E N E R V OL TA GE 4. 7 TO 75 V SILICON 400 mW ZENER DIODES • S M A L L R UG GED D O U B L E S L U G C O N S T R U C T I O N DO-35

5C transistor

Abstract: C1.L ec61
Contextual Info: wvx ~8}/~ /2~. x ,351 ~ .+51+7/~|00; 6+|0+* 0|7~./2- 5+0|; :/7. ~3/0 75|26/+27 68445+66/32 .,zyxw ,?<IJG?H EdgXZ WVaVcXZY aViX]^c\ gZaVn S^i] Xd^a igVch^Zci hjeegZhh^dc 54@ XdciVXih hl^iX]^c\ XVeVW^a^in EV^ajgZ gViZ aZkZa XVc WZ aZkZa I G^\] VbW^Zci Veea^XVW^a^in

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

DI 944

Abstract: q524
Contextual Info: /-{zwy wvx *9~0* 03*/ w -462 * /,62,80*}11< 7,}1,+ 6,1}< -@=JKH@I \ EdgXZ WVaVcXZY \ 69@ XdciVXih hl^iX]^c\ XVeVW^a^in \ EV^ajgZ gViZ XVc WZ aZkZa I \ G^\] VbW^Zci Veea^XVW^a^in \ @aa bZiVa lZaYZY XdchigjXi^dc \ GZgbZi^XVaan lZaYZY VcY bVg`ZY Wn aVhZg }2~0,38 }+}58}~0108<