DIODE N20 Search Results

TSP70

Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series

SDA32N20

Abstract: DIL-20 DIL20 SDA32 SDA32D20 SO20 DSA003654
Contextual Info: SCHOTTKY DIODE ARRAY SDA32 ISSUE 2 – JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • • The device helps suppress transients caused by transmission line reflections, cross talk and

smd diode marking FG

Abstract: f15jc10
Contextual Info: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 D F15J C 10 Unit-m m W e ig h t 1.5g Typ 10.2 100 V 15A Feature • SMD • -fg| = 0 . 6mA • SMD • SiyRTÈÎEiËcI l_y(<_<LU'' • Resistance for thermal run-away • High lo Rating-Small-RKG

DAN212K

Abstract: DAP202U DAN202K DAP202K DA114 DA121 DA227 DAN202U DAN222 recovery diodes 5 ns
Contextual Info: DA114/DA121/DA227/DAN202K/DAN202U DAN212K/DAN222/DAP202K/DAP202U/DAP222 Diodes Ultra high-speed switching diode arrays DA114 / DA121 / DA227 DAN202K / DAN202U / DAN212K / DAN222 DAP202K / DAP202U / DAP222 DAN202K / DAP202K / DAN212K 2.9±0.2 1.9±0.2 1.1 0.95 0.95

DAP202U

Abstract: DAN202K DAP202K DAP222 DA227 DAN202U DAN222
Contextual Info: DA227/DAN202K/DAN202U/DAN222 DAP202K/DAP202U/DAP222 Diodes Switching diode DA227 DAN202K / DAN202U / DAN222 DAP202K / DAP202U / DAP222 DAN202K / DAP202K DAN202U / DAP202U 0.95 0.95 +0.2 -0.1 2.0±0.2 0.15 +0.1 -0.06 zMarking 0.15±0.05 0.3±0.1 All pins have the same dimensions

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 5 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

MTD0208-M23

Abstract: tunnel diode high frequency MTD0218-M23 MTD-0818
Contextual Info: metelics B R O A D B A N D TUNNEL DIODE DETECTORS CORPORATION The MTD Series of Broadband Tunnel Detectors offers high sensitivity and low VSWR. These detectors are available in several standard packages. Special packages and opposite polarities are available

N20E

Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
Contextual Info: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast

Contextual Info: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 MO-153AA
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

DAP202K

Abstract: DAN202K
Contextual Info: DAN202K/DAP202K/DAN202U/DAP202U/DAN212K — K / D io d e s DA106K/DA106U/DA112/DA113/DA114/DA115 DA116/DA118/DA119/DAN202K/DAP202K DAN202U/DAP202U/DAN212K Silicon Epitaxial Planar Ultra-High Speed Switching Diode Arrays

AN7254

Abstract: AN7260 ITF86174SQT ITF86174SQT2 TB370
Contextual Info: ITF86174SQT Data Sheet 9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging TSSOP-8 Features • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = −10V - rDS(ON) = 0.024Ω, VGS = −4.5V - rDS(ON) = 0.027Ω, VGS = −4V • Gate to Source Protection Diode

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

QFN20

Abstract: T7024 T7024-PGP T7024-TRQ T7024-TRS PU-118
Contextual Info: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode

PT570LC4

Abstract: 74118 2500VRMS 3000VA E214025 EN60947-4-1 relays schrack relay 17a 12v PT570730 miniature 12v relay schrack
Contextual Info: General Purpose Relays Industrial Relays Schrack Miniature Relay PT n 2 pole 12A, 3 pole 10A or 4 pole 6A, 2, 3 or 4 form C CO contacts or AC coil n Switching performance up to 3000VA n Relay height 29mm n Mechanical indicator, optional LED and protection diode

Contextual Info: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101

SMD diode DB3

Abstract: SMD diode N20 SMD diode DB6 8c 617 transistor AD7545JN AD7545KN AD7545SQ AD7545TQ DB10 AD7545
Contextual Info: a CMOS 12-Bit Buffered Multiplying DAC AD7545 FEATURES 12-Bit Resolution Low Gain TC: 2 ppm/؇C typ Fast TTL Compatible Data Latches Single +5 V to +15 V Supply Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount Packages Latch Free Schottky Protection Diode Not Required

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

n13 sot 65

Abstract: FDT461N 29e8 RS80 marking 461 m067
Contextual Info: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode

n20eg

Abstract: 6N20E 369D AN569 MTD6N20E 6n20eg
Contextual Info: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching

PT570LC4

Abstract: PT570524 PT370024 PT570730 EN6094 pt580024 schrack pt570t30 PT570024 E214025 EN60947-4-1
Contextual Info: SCHRACK General Purpose Relays Miniature Relay PT n 2 pole 12 A, 3 pole 10 A or 4 pole 6 A, 2, 3 or 4 CO contacts n DC- or AC-coil n Switching performance up to 3000 VA n Relay height 29 mm n Mechanical indicator, optional LED and protection diode n Manual test tab, optionally lockable.

F16H

Contextual Info: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES T h e S D A 3 2 S c h o ttk y B a rrie r D io d e A rra y is d e s ig n e d to re d u c e re fle c tio n n o is e o n h ig h spe ed p a ra lle l d a ta lin e s. • T h e d e v ic e h e lp s s u p p re s s tra n s ie n ts cau sed

50N20

Abstract: 42N20 4250A DIODE N20
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V

IXFN106N20

Contextual Info: HiPerFETTM Power MOSFET IXFN 106 N20 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous