DIODE N20 Search Results

TSP70

Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series

Contextual Info: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused

Contextual Info: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

SDA32N20

Abstract: DIL-20 DIL20 SDA32 SDA32D20 SO20 DSA003654
Contextual Info: SCHOTTKY DIODE ARRAY SDA32 ISSUE 2 – JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • • The device helps suppress transients caused by transmission line reflections, cross talk and

DIODE N20

Abstract: SD Series
Contextual Info: Section 9: Integrated Circuits S ch o ttky Diode A rra y Series SD A S e rie s The SDA Schottky Barrier Diode Array series is designed to reduce reflection noise on high speed parallel data lines. This helps suppress transients caused by transm ission line

OL3489N-200-P20

Contextual Info: JOG-00612 Optical Components OL3489N-200-P20 Rev.3 [10. 2008 ] 1300nm+/-20nm 200mW Pulsed MQW Laser Diode Coaxial Module with MMF. 1. DESCRIPTION OL3489N-200-P20 is a 1300nm Laser Diode in coaxial package with 62.5µm MMF. 2. FEATURES • Fiber output: Po=200mW

W1A 73

Abstract: Diode LT 410 ic tms 1000 81 210 W 20 w1A 49 W1A 95 dt61n dt250n
Contextual Info: Thyristor-Dioden-Module für l-Umrichter Thyristor-diode-modules for current source inverters Modules thyristor-diode pour convertisseurs à circuit intermédiaire à courant continu Typ Type V drm It r m s m Itsm / ¡ 2d t Itavm /I c V TO Tt ( d i/ d t ) cr

smd diode marking FG

Abstract: f15jc10
Contextual Info: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 D F15J C 10 Unit-m m W e ig h t 1.5g Typ 10.2 100 V 15A Feature • SMD • -fg| = 0 . 6mA • SMD • SiyRTÈÎEiËcI l_y(<_<LU'' • Resistance for thermal run-away • High lo Rating-Small-RKG

DAP202U

Abstract: DAN202K DAP222 DAP202K
Contextual Info: DA114/DA121/DA227/DAN202K/DAN202U DAN212K/DAN222/DAP202K/DAP202U/DAP222 Diodes Switching diode DA114 / DA121 / DA227 DAN202K / DAN202U / DAN212K / DAN222 DAP202K / DAP202U / DAP222 zExternal dimensions Units : mm DAN202K / DAP202K / DAN212K 0.95 0.95 +0.2

DAN212K

Abstract: DAP202U DAN202K DAP202K DA114 DA121 DA227 DAN202U DAN222 recovery diodes 5 ns
Contextual Info: DA114/DA121/DA227/DAN202K/DAN202U DAN212K/DAN222/DAP202K/DAP202U/DAP222 Diodes Ultra high-speed switching diode arrays DA114 / DA121 / DA227 DAN202K / DAN202U / DAN212K / DAN222 DAP202K / DAP202U / DAP222 DAN202K / DAP202K / DAN212K 2.9±0.2 1.9±0.2 1.1 0.95 0.95

DIODE N20

Abstract: DAP222M DAP202K DAP202U DAP222 N-Type Switching diode 4 DA227 DAN202K DAN202U
Contextual Info: DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Diodes Switching diode DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227 1 (3) 0.32±0.05 1.2±0.1 0.13±0.05 +0.1 0.3 −0.05 ROHM : VMD3 EIAJ : JEDEC : 0.15 +

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

DAP202U

Abstract: DAN202K DAP202K DAP222 DA227 DAN202U DAN222
Contextual Info: DA227/DAN202K/DAN202U/DAN222 DAP202K/DAP202U/DAP222 Diodes Switching diode DA227 DAN202K / DAN202U / DAN222 DAP202K / DAP202U / DAP222 DAN202K / DAP202K DAN202U / DAP202U 0.95 0.95 +0.2 -0.1 2.0±0.2 0.15 +0.1 -0.06 zMarking 0.15±0.05 0.3±0.1 All pins have the same dimensions

DAN202K

Abstract: DAP202K DAP202U DAP222 da2271 DA227 DAN202U DAN222 DAN222M DAP222M
Contextual Info: DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Diodes Switching diode DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227 1 (3) 0.32±0.05 1.2±0.1 0~0.1 0.15 + − 0.05 ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT - 416

DAN202K

Abstract: DAP202K DAP202U DAP222 DA227 DAN202U DAN222 DAN222M DAP222M
Contextual Info: DAN222M/DAN222/DAN202U/DAN202K DAP222M/DAP222/DAP202U/DAP202K DA227 Diodes Switching diode DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227 1 (3) 0.32±0.05 1.2±0.1 0~0.1 0.15 + − 0.05 ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT - 416

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 5 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

MTD0208-M23

Abstract: tunnel diode high frequency MTD0218-M23 MTD-0818
Contextual Info: metelics B R O A D B A N D TUNNEL DIODE DETECTORS CORPORATION The MTD Series of Broadband Tunnel Detectors offers high sensitivity and low VSWR. These detectors are available in several standard packages. Special packages and opposite polarities are available

n20eg

Abstract: 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4
Contextual Info: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast

N20E

Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
Contextual Info: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast

Contextual Info: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode

AN7254

Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 MO-153AA
Contextual Info: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

DAP202K

Abstract: DAN202K
Contextual Info: DAN202K/DAP202K/DAN202U/DAP202U/DAN212K — K / D io d e s DA106K/DA106U/DA112/DA113/DA114/DA115 DA116/DA118/DA119/DAN202K/DAP202K DAN202U/DAP202U/DAN212K Silicon Epitaxial Planar Ultra-High Speed Switching Diode Arrays