DIODE MARKING SR Search Results

schottky diode sod-123 marking code 120

Abstract: marking code diode 14 1N5819WB diode sod-123 marking code 26 diode sod-123 marking code 120 marking code sr MARKING ME 123 1N5817WB 1N5818WB diode marking 14
Contextual Info: 1N5817WB-1N5819WB 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Marking: 1N5817WB Marking Code: A0 1N5818WB Marking Code: ME 1N5819WB Marking Code: SR Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25OC

1N5818WB

Abstract: 1N5819WB diode sod-123 marking code 120 1N5817WB
Contextual Info: 1N5817WB-1N5819WB 1 A SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Top View Marking Code: 1N5817WB: A0 1N5818WB: ME 1N5819WB: SR Simplified outline SOD-123 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

SIR-341ST3F

Contextual Info: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

Contextual Info: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

Contextual Info: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode L1SS400GT1G • Applications High speed switching • Features 1 Extremely small surface mounting type. 1 2) High Speed. 3) High reliability. • Construction Silicon epitaxial planar 2 SOD - 723 • Device Marking

Contextual Info: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching diode L1SS400T1 • Applications High speed switching • Features 1 Extremely small surface mounting type. 1 2) High Speed. 3) High reliability. • Construction Silicon epitaxial planar 2 SOD - 523 • Device Marking

Contextual Info: SIR-341ST3F Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it

BSM 151

Abstract: FR-SD ERB37
Contextual Info: ERB37 i .qa K : Outline Drawings FA ST RECO V ERY DIODE : Features M ^ tsz : Marking Super high speed switching Low VF in turn on High reliability Applications High speed switching. : Maximum Ratings and Characteristics : Absolute Maximum Ratings Items Repetitive Peak Reverse Voltage

DIODE s3l

Abstract: S3L 15 diode DIODE s3l 15 3L60 3L60U DIODE s3l 65 S3L60U
Contextual Info: n - n x V'CX-Y- Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L60 600V 2.2A CD r7TU . 7-0 26.5±2 • h Unit • mm Package I AX14 <¡>4.4-0. 2 6 .5 « iîj ï l l d <> -N - •trr50ns •:-tSEPB*[ Marking S3L 05 •P F C nan£ Type No. •SRSÍÜ

DIODE FAST S2L

Abstract: DIODE s2l S2L60 S2L DIODE "S2L" DIODE
Contextual Info: n - n x V 'C X - Y Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS S2L60 600V 1-5A CD 26.5±2 • Unit • mm Package I AX10 <¡>4.4-0. 26.5« 7-0 h iîj ïl l d <> •trr50ns -N - •:-tSEPB*[ Marking S2L 07 •P F C / •SRSÍÜ • ^ B s O A ffi'E

transistor d 1933

Abstract: marking 9AW CN1933 CP1342
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR CN1933 9AW TO-220 MARKING: CN 1933 Low Freq. Power Amp. Built in Damper Diode Complementry CP1342 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

CN1933

Abstract: CP1342
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CP1342 9AW TO-220 MARKING: CP 1342 Low Freq. Power Amp. Built in Damper Diode Complementry CN1933 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

marking 9AW

Abstract: CN1933 CP1342
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR CP1342 9AW TO-220 MARKING: CP 1342 Low Freq. Power Amp. Built in Damper Diode

T930

Abstract: diode code yw marking code YW DIODE T460 ERC13 T151 Shl50
Contextual Info: ERC13 1 .2A — K : Outl i ne Drawings GENERAL USE RECTIFIER DIODE •*(#•§ : Features • High surge current • 'Jv5 2 ,liM • A fflS H i Compact size, lightweight M it T F I Marking High reliability * 9 - 3 - H :# Color code: Blue \ General purpose rectifier applications

ERA32

Abstract: T460 T151 T760 marking code CV3
Contextual Info: ERA32 ia • ftîfê '+ fè : Outline* Drawings FAST RECOVERY DIODE *3 T . \ — 28MIN — ¿08. 1 5 -28MIN— Features Super high speed switching. • 1&Vf Low VF ’ Marking A f - J - K : tt Color • a ftfttt High reliability code : Orange >> Abridged type name

Contextual Info: ERB35 ia I Outline Drawings FAST RECOVERY DIODE : Features • iê/K : Marking Soft recovery, low noise • A f t f f i't i High reliability * —3 — K $ Cole r code : Applications Abridged type n am e^' DP f t -> Silver s. 1 ^ O ÍV - Í- 'T - Í ft-

CCD GFT

Abstract: ERD31 SS53 40114 JD51
Contextual Info: ERD31 i.5A t> £ : Outline Drawings FAST RECOVERY DIODE : Features : Marking Large current H igh voltage by mesa design 'M is ttte •h ' j — Y - j - 0 High reliability 031-04 , (-«HtflE* i ±W : f t ] ■T«J lOfl-Q. Hfl-«. I2A- : Applications ■■Œî'9^

MARKING aep

Contextual Info: ' t y y ÿ ' f # —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft 1 J» >1 ■K 1 ? High reliability by planer design. • Marking 9 oi 3 W :ft5m m b'7f S KM A «TBI WiH^nW

a124 es

Abstract: rkm v
Contextual Info: E R D 3 2 3 A * ± 'J : Outline Drawings -K FAST RECOVERY DIODE Features : Marking S u p e r h ig h speed s w itc h in g • ffiVF A5 - 3 - K Color code ; 0 range Low V F B sW i Abridged Large c u rre n t • SSft is-ti ty p e name 5 7. V oltage class

SR70 SEMTECH

Abstract: semtech sr70 SR70
Contextual Info: SR70 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR70 has been specifically designed to protect sensitive components which are connected to data and transmission

497B

Contextual Info: SR70 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR70 has been specifically designed to protect sensitive components which are connected to data and transmission

marking code R12

Abstract: marking code diode R12 marking 5a TVS SOT143 marking r12 SR12.TC
Contextual Info: SR12 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR12 has been specifically designed to protect sensitive components which are connected to data and transmission lines from