DIODE MARKING S4 Search Results

diode IR 100 8K

Contextual Info: BAP51-02 Small Signal General Purpose PiN Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOD-523 FEATURES Low Diode Capacitance Low Diode Forward Resistance A B MARKING D A5 E F C PACKAGE INFORMATION

Contextual Info: BAP50-03 Small Signal General Purpose PiN Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOD-323 Low Diode Capacitance Low Diode Forward Resistance D 1 Cathode Band H G MARKING 2 F A81 C PACKAGE INFORMATION

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes SOD-523 1SS389 SCHOTTKY BARRIER DIODE FEATURES     High Speed High Reliability Small Package Low Forward Voltage APPLICATIONS  High Speed Switching MARKING: S4

DIODE S3V 63

Contextual Info: Axial Diode Single Diode Avalanche type • O U T L IN E D IM E N S IO N S D ‘ Cathode (D • Anode S3VDZ 7.5MAX 24MIN 600V 3.5A 24MIN II JLi o-— M Marking S3V □D _ Type No. (S4.8MAX -■0 x-inwH JiM i! ■ +1 63 / C olor code, Cathode band

SD103AW

Abstract: SD103BW SD103CW continental SOD123 103CW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS

DIODE marking S6 57

Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

Diode smd s6 95

Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

smd diode code g3

Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C

smd diode code SL

Abstract: Diode smd s6 46 160-0055X1 SMD MARKING g4
Contextual Info: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol

Contextual Info: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol

smd diode code SL

Abstract: SMD mosfet MARKING code TJ SMD MARKING QG 6 PIN DIODE marking S4 06 200909 smd diode code g3 smd diode g6 160-0055X1 SMD MARKING g5 SMD mosfet MARKING code TC
Contextual Info: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol

smd diode g6

Abstract: 160-0055X1 SMD mosfet MARKING code TC smd diode S2 smd diode s1 smd g1 smd diode code SL
Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol Conditions

Contextual Info: GWM 160-0055X1 VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol

Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100

75W100GA

Abstract: 75W100GC DIODE S4 37
Contextual Info: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

120W55GA

Abstract: 120W55GC smd diode code g6 9
Contextual Info: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

Contextual Info: GMM3x60-015X2 VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary Data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 S4 S6 L1- L2- L3+ L3 L3- Applications MOSFETs Symbol Conditions

smd diode marking code L2

Abstract: marking G5 MOSFET smd part marking
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications

Schottky Diode Marking C3

Contextual Info: Schottky Barrier Diode Twin Diode Wtm S40HC3 OUTLINE 30V 40A m sm Feature • Tj=125°C • • • • • fiVF= 0.40V • e • * t ä § i Tj=125°C Low V f=0.40V Small B jc High lo Rating Main Use • Reverse current protection • Server, Router, RAID

Q1205

Abstract: ss92 BSS92 transistor sS92 siemens ss92
Contextual Info: SIEMENS BSS92 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type b -0.15 A BSS92 ^DS -240 V Type BSS92 BSS92 BSS 92 Ordering Code Q62702-S497 Q62702-S633 Q62702-S502 flDS(on) 20 a Package Marking

Contextual Info: BSS 100 S IP M O S Sm all-Signal Transistor • N channel • Enhancement mode • Logic Level • ^G S th = 0.8.2.0V Type ^DS !d f î DS(on) Package Marking BSS 100 100 V 0.22 A 6Q TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code Q62702-S499

BSP320

Contextual Info: SIEMENS BSP 320 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • W = 2-1 - 4 0 V Type Vos k) R DS on) Package BSP 320 S 60 V 2.9 A 0.12 Q SOT-223 Marking Ordering Code Q67000-S4001 Maximum Ratings Parameter Symbol

TO-92 SS

Abstract: Q62702-S493 Q62702-S636
Contextual Info: BSS 101 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 101 240 V 0.13 A 16 Ω TO-92 SS 101 Type BSS 101 BSS 101 Ordering Code Q62702-S493