DIODE MARKING OX Search Results

Contextual Info: Preliminary US4PBC, US4PCC & US4PDC Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement K • Oxide planar chip junction

B150

Abstract: B160 MBR150 MBR150RL MBR160 MBR160RL
Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap

B150

Abstract: B160 MBR150 MBR150RL MBR160 MBR160RL
Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

B2535L

Abstract: B2535L diode
Contextual Info: MBR2535CTL SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

6R190C6

Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

DIODE 1N5822

Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

b10 45g

Abstract: b1045 940 b10 45g b1045g MBRD1045T4G MBRB1045T4G ON B10 45G diode b1045 MBRB1045 MBRB1045G
Contextual Info: MBRB1045, MBRD1045 Preferred Device SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

B2060G

Contextual Info: MBRJ2060CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

marking code onsemi Diode B34

Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: RoHS CS32SP Silicon Diode with Silicon Oxide Passivation in a Copper Pill Package Product Environmental Data Sheet CS32SP Semiconductor Silicon Chip – Oxide Passivated Silicon with Boron Doping CAS 1E-10 Silicon Gold Plated Contact 7400-21-3 Contact CS32SP - Package

MBR340

Abstract: B340 MBR340RL
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

Contextual Info: MOTOROLA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by M BR2515L/D MBR2515L Advance Information SWITCHMODE Pow er R ectifiers . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide

Contextual Info: Wha% HEW LETT* WlltM PA CKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and

511KD14 VARISTOR

Abstract: 201KD14 varistor 502 m 431kd14 391KD14 151kd14
Contextual Info: 14Φ SERIES DATA SHEET METAL OXIDE VARISTOR – 14Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 18V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.

MBRS140T3G

Abstract: SBRS8140T3G B14A schottky diode SMB marking code 120 b14 smb diode smb marking code B14
Contextual Info: MBRS140T3G, SBRS8140T3G Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

B20200G AKA

Abstract: B20200G
Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

471kd20 varistor

Abstract: 271KD20J 751KD20
Contextual Info: 20Φ SERIES DATA SHEET METAL OXIDE VARISTOR – 20Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 18V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.

marking IRH

Contextual Info: Schottky Barrier Diode Twin Diode Wtm SF30JC6 OUTLINE 60V 30A Feature • • • • • • Tj=150°C • [Æ -JU K 7 • fîlR=0.7mA • if& flÆ S Ê ê C U C C U • l Ë S I f f i 2kV S Ï I Tj=150°C Full Molded Low lR=0.7mA Resistance for thermal run-away

Contextual Info: MBRAF1540T3G, NRVBAF1540T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

B20200G

Contextual Info: MBRJ20200CTG Product Preview SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

NRVBS3200T3

Abstract: NRVBS3200T3G power rectifier MBRS3200T3 Rev.5 MBRS3200T3D
Contextual Info: MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

403A03

Contextual Info: MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRA160T3G

Abstract: SMA CASE 403D-02 footprint
Contextual Info: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay