DIODE MARKING OX Search Results

Contextual Info: MC74VHC1G66 SPST NO Normally Open Analog Switch MARKING DIAGRAMS 5 SC−88A DF SUFFIX CASE 419A High Speed: tPD = 20 ns (Typ) at VCC = 5.0 V 5 5 1 Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C V9 M G Diode Protection Provided on Inputs and Outputs

ERA82-004

Abstract: P151 T151 T810 T930 a316
Contextual Info: ERA 82-004 o.6A M J f : Outline Drawings SC H O TTK Y BARRIER DIODE Features • te V F Low V f ISït f : Marking *•7- o—K : t-i Color code •White Super high speed switching. • n m - ¿ ¿ a ti« H 4 High reliability by planer design. ¥ 1 D y f-Na

B2030

Abstract: B-2030
Contextual Info: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact.

Contextual Info: SB10150DC – SB10200DC 10A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection

Contextual Info: SB8150DC – SB8200DC 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection

Contextual Info: SB40150DC – SB40200DC 40A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection

Contextual Info: SB16150DC – SB16200DC 16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection

Contextual Info: SB20150DC – SB20200DC 20A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection

Contextual Info: SB30150DC – SB30200DC 30A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection

Contextual Info: SB25150DC – SB25200DC 25A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection

Contextual Info: SBL3020DC – SBL3045DC 30A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 200A Peak

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2N10 Preliminary Power MOSFET 2 Amps,100 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off

Contextual Info: SB2520DC – SB25100DC 25A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 200A Peak

Contextual Info: SB820DC – SB8100DC 8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak

Contextual Info: SB1020DC – SB10100DC 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak

Contextual Info: SB2020DC – SB20100DC 20A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak

Contextual Info: SB4020DC – SB40100DC 40A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 250A Peak

Contextual Info: SB3020DC – SB30100DC 30A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 200A Peak

b20100

Abstract: B20100 diode MBRF20100CT
Contextual Info: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

B20100

Abstract: B20100 diode MBRF20100CT
Contextual Info: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b2060

Contextual Info: MBRF2060CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

b2060

Contextual Info: MBRF2060CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

Contextual Info: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

marking B1100

Contextual Info: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,