DIODE MARKING M1 Search Results

zener diode 4.7V

Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Contextual Info: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3

Contextual Info: Single Diode M1FH3 Schottky Barrier Diode mtmm o u t l in e 30V 1.5A io V - P v - ? C ath o d e m ark CD Feature I Small SMD Super-Low V f= 0 .3 6 V •g e < g V F = 0 .3 6 V Unit-mm Weight 0.027g Typ Package : M1F H92 1 , T y p e No. Main Use • D C /D C

E72873

Abstract: 120-16NO2T VUO120-16NO2T ntc application vuo120-16no2
Contextual Info: VUO 120-xxNO2T Three Phase Rectifier Bridge with NTC VRRM = 1200/1600 V 188 A IDAVM = IFSM = 1100 A Preliminary data Part name Marking on product VUO120-12NO2T VUO120-16NO2T M1/O1 W5 ~ K6 ~ E6 ~ A6 W6 E72873 M10/ O10 Pin configuration see outlines. Features:

Contextual Info: Rectiier Diode Surface Mounting Device Single Diode OUTLINE M1FE40 400V 2A • • • Unit : mm Weight : 0.027g typ. Package M1F 2.8 カソードマーク Cathode mark ① SMD E88 1.8 ＋① ②− ② ロット記号（例） Date code 品名略号 Type No.

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

Contextual Info: Schottky Barrier Diode Single Diode M1FH3 30V 1.5A Feature • Small SMD • Super-Low Vf=0.36V • * * S f i V F = 0 .3 6 V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K y ÿ !L -iîÊ fê B 5 ±

VUB160-16NOXt

Abstract: VUB160-16NOX VUB160-16
Contextual Info: VUB160-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 220 A = 1100 A VCE sat = 1.95 V 3~ Rectifier Bridge + Brake Unit Part name VUB160-16NOXT W5 W6 S1 M1/O1 NTC U1/ W1 ~A6 ~E6 ~K6 M10/O10

VUB120-16NOX

Contextual Info: VUB120-16NOX 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 155 A = 1100 A VCE sat = 1.9 V 3~ Rectifier Bridge + Brake Unit Part name VUB120-16NOX M1/O1 S1 U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10

VUB120-16NOXT

Abstract: VUB120-16NOX VUB120-16
Contextual Info: VUB120-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 188 A I C25 IFSM = 155 A = 1100 A VCE sat = 1.9 V 3~ Rectifier Bridge + Brake Unit Part name VUB120-16NOXT W5 W6 S1 M1/O1 NTC U1/ W1 ~A6 ~E6 ~K6 M10/O10

smd code book z1

Contextual Info: Super Fast Recovery Diode mtm OUTLINE Single D iode M1FL40 400V 1.5A ;fr y - F y - ? Cathode m ar Feature • /JvPSMD Unit-mm Weight 0.027g Typ Package : M1F • Small SMD • fîy -fX ' • Low Noise • trr=50ns • trr=50ns [| a 03 1 x U -yb^d^(M )

diode SMD MARKING CODE JV

Abstract: smd diode marking code SM smd marking KH
Contextual Info: Super Fast Recovery Diode mtm OUTLINE Single D iode M1FL20U Package I M1F 200V 1.1 A -fty -K v -? ÇWi— Cathode mai' Feature • /JvPSMD U n it-m m W eight 0 .0 2 7 g T y p £ |L 6 W • Small SMD • ß y -rx • Low Noise • trr=35ns • trr=35ns

VVZB120-16IOX

Contextual Info: VVZB120-16ioX 3~ Rectifier Thyristor Module Brake Chopper VRRM = 1600 V VCES = 1200 V IDAVM = 120 A I C25 IFSM = 155 A = 700 A VCE sat = 1.9 V 3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit Part name VVZB120-16ioX O1 S1 D E1 I1 M1 W1 L7 G7

M1MA151WK

Abstract: M1MA152WK M1MA152KA
Contextual Info: M1MA151WK / M1MA152WK Surface Mount Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A CATHODE 3 L S 3 2 3 Top View B 1 2 1 2 D G 1 ANODE J C K H MAXIMUM RATINGS TA = 25°C Rating Reverse Voltage

motorola diode marking code

Contextual Info: Order this data sheet by M1MA141WAT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com m on A n ode Silico n Dual S w itc h in g Diode M1MA141WAT1 M1MA142WAT1 Motorola Preferred Devices This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra

motorola surface mount marking code

Abstract: motorola diode marking code M1MA141WAT1 M1MA142WAT1 SMD310 motorola silicon dual diode common cathode
Contextual Info: MOTOROLA Order this document by M1MA141WAT1/D SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which

motorola diode marking code

Abstract: M1MA141KT1 M1MA142KT1 SMD310
Contextual Info: MOTOROLA Order this document by M1MA141KT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low

Contextual Info: MOTOROLA Order this document by M1MA141WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

Marking H2

Abstract: code M.H diode marking H2 M1MA151 marking M1MA151KT1 M1MA152KT1 SC59 H222 H21 MARKING
Contextual Info: Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications. M1MA151KT1 M1MA152KT1

H122

Abstract: M1MA151 marking marking H1 M1MA151AT1 M1MA152AT1
Contextual Info: Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use M1MA151AT1 M1MA152AT1 in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.

h322

Abstract: H3 marking M1MA151 marking M1MA151WAT1 M1MA152WAT1
Contextual Info: Common Anode Silicon Dual Switching diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low

M1MA141KT1

Abstract: M1MA141KT1G M1MA142KT1 M1MA142KT1G
Contextual Info: M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low