DIODE MARKING M1 Search Results

Contextual Info: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips

zener diode 4.7V

Abstract: marking h2 SOD-323 ZENER Zener Diode SOD-323 marking code 2b marking 2h SOD-323 ZENER A25 ZENER DIODE E1 sod323 diode marking code 2E zener diode 4.7V current rating diode F4 8a marking code 8A
Contextual Info: Surface Mount Zener Diode MMSZ52XXBS Series A suffix of "-C" specifies halogen-free 200mW, SOD-323 Electrical Characteristics @ T A=25 C unless otherwise specified Zener Voltage Range Note 1 Type Number Marking Code Nom V 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.3

zener diode E2

Abstract: ZENER DIODE E1 zener diode J3 DIODE H5 c2 marking C5 87 marking code MM zener MMSZ5240 MMSZ5257B RoHS MMSZ5221B MMSZ5222B
Contextual Info: Surface Mount Zener Diode MMSZ52XXB Series A suffix of "-C" specifies halogen & lead-free 500mW,5% SOD-123 Electrical Characteristics @ T A=25 C unless otherwise specified Type Number Marking Code Zener Voltage Range Note 1 Nom V 2.4 2.5 2.7 3.0 3.3 3.6

M1MA142WKT1

Abstract: dual reverse diode
Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode M1MA141KT1 M1MA142KT1 This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

dual switching diode

Abstract: diode MARKING CODE MN diode code marking MN MN DIODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

motorola diode marking code

Abstract: Device marking code 1M diode M1MA142W 141WK diode marking code MU 142WK
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M 1M A141W KT1 M1MA142W KT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the S C -7 0 package

Device marking code 1m diode

Abstract: Diode marking CODE 1M Marking Code "1m" diode diode 1M MARKING CODE motorola diode marking code 141WK diode MARKING CODE jx cq 545 SQT-323 MU diode MARKING CODE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Sw itching Diode M1MA141WKT1 M1MA142WKT1 Motorola Preferred D *v lc * This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the

Contextual Info: ON Semiconductort M1MA141KT1 M1MA142KT1 Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: ON Semiconductort M1MA141WAT1 M1MA142WAT1 Common Anode Silicon Dual Switching Diode ON Semiconductor Preferred Devices This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low

DIODE 436

Abstract: 141WK
Contextual Info: ON Semiconductort M1MA141WKT1 M1MA142WKT1 Common Cathode Silicon Dual Switching Diode ON Semiconductor Preferred Devices This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low

motorola diode marking code

Abstract: VA MARKING SC-70 PACKAGE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 Motorola Preferred Device# This C ommon Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70

DIODE MARKING EA

Abstract: 41KT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon S w itching Diode M1MA141KT1 M1MA142KT1 This Silicon Epitaxial Planar Diode is designed for use in ultra high speed sw itching applications. This device is housed in the SC-70 package which is designed for low pow er surface m ount applications.

Contextual Info: Single Diode M1FH3 Schottky Barrier Diode mtmm o u t l in e 30V 1.5A io V - P v - ? C ath o d e m ark CD Feature I Small SMD Super-Low V f= 0 .3 6 V •g e < g V F = 0 .3 6 V Unit-mm Weight 0.027g Typ Package : M1F H92 1 , T y p e No. Main Use • D C /D C

E72873

Contextual Info: VUO 120-xxNO2T Three Phase Rectiier Bridge with NTC VRRM = 1200/1600 V 188 A IDAVM = IFSM = 1100 A Preliminary data Part name Marking on product VUO120-12NO2T VUO120-16NO2T M1/O1 W5 ~ K6 ~ E6 ~ A6 W6 E72873 M10/ O10 Pin coniguration see outlines. Features:

E72873

Abstract: 120-16NO2T VUO120-16NO2T ntc application vuo120-16no2
Contextual Info: VUO 120-xxNO2T Three Phase Rectifier Bridge with NTC VRRM = 1200/1600 V 188 A IDAVM = IFSM = 1100 A Preliminary data Part name Marking on product VUO120-12NO2T VUO120-16NO2T M1/O1 W5 ~ K6 ~ E6 ~ A6 W6 E72873 M10/ O10 Pin configuration see outlines. Features:

bzd27c

Abstract: diode z62
Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA / M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

BZD27C

Abstract: Z15 marking diode diode Z47 diode z36 cathode bzd27
Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA / M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

Contextual Info: Rectiier Diode Surface Mounting Device Single Diode OUTLINE M1FE40 400V 2A • • • Unit : mm Weight : 0.027g typ. Package M1F 2.8 カソードマーク Cathode mark ① SMD E88 1.8 ＋① ②− ② ロット記号（例） Date code 品名略号 Type No.

z15 Diode glass

Abstract: zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING
Contextual Info: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

Contextual Info: Schottky Barrier Diode Single Diode M1FH3 30V 1.5A Feature • Small SMD • Super-Low Vf=0.36V • * * S f i V F = 0 .3 6 V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K y ÿ !L -iîÊ fê B 5 ±

smd diode marking 1A

Abstract: diode smd marking 1A m1f60 smd marking 1A M1F80
Contextual Info: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1F□ Unit : mm Weight : 0.027g （typ.） Package：M1F 800V 1A 特長 • 小型 SMD • 耐湿性に優れ高信頼性 Feature • Small SMD • High-Reliability