DIODE MARKING LE ST Search Results

DIODE marking A2

Abstract: top side marking b2 CSPESD301 CSPESD301G CSPESD302 CSPESD302G CSPESD303 CSPESD303G
Contextual Info: CSPESD301/302/303 1, 2 and 3-Channel ESD Arrays in CSP Features Product Description • • The CSPESD301/302/303 is a family of 1, 2, and 3channel ESD protection arrays, which integrate two, three and four identical avalanche-style diodes. It is intended that one of these diodes is connected to GND

D6636

Contextual Info: STTH12004TV1 Ultrafast high voltage rectifier Table 1: Main product characteristics IF AV 2 x 60 A A1 K1 VRRM 400 V A2 K2 Tj (max) 150 °C VF (typ) 0.83 V trr (max) 50 ns K1 A1 K2 Features and benefits A2 c u d Ultrafast switching Low reverse current Low thermal resistance

STTA106

Abstract: STTA106U diodes STmicroelectronics marking T01 STTA106RL smb le C2631 marking ED smb
Contextual Info: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS • ■ ■ ■ c u d SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

JESD97

Abstract: STTH120L04TV1
Contextual Info: STTH120L04TV1 Ultrafast high voltage rectifier Mian product characteristics IF AV 2 x 60 A VRRM 400 V Tj (max) 150° C VF (typ) 0.83 V trr (max) 50 ns Low reverse current ● Low thermal resistance ● Reduces switching and conduction losses ● Package insulation voltage: 2500 VRMS

irf540

Abstract: IRF540 application irf540 mosfet control motor irf540 switch irf540 circuit diagram MOSFET IRF540 IRF540 Rg IRF540 mosfet with maximum VDS 30 V irf540 be IRF540 mosfet
Contextual Info: IRF540 N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF540 • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.077 Ω 22 A TYPICAL RDS(on) = 0.055Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED

STPS2530CG

Abstract: STPS2530CG-TR
Contextual Info: STPS2530C LOW DROP POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 12.5 A VRRM 30 V Tj 150°C VF(max) 0.45 V K FEATURES AND BENEFITS • ■ ■ ■ ■ Very small conduction losses Negligible switching losses Extremely fast switching

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG10SC4M Unit : mm Package I FTO-220G Weight 1.54g Typ> 40 V 10 A 4.5 Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm Rating • t ë ï i H Œ 2k V ( S I I • Full Molded • Dielectric Strength 2kV

SG20LC20USM

Abstract: SG20LC20U
Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SG20LC20USM 200V 20A Feature •i& y 'fx • • Low Noise trr=25ns • tnr=25ns • 7 1 1 ^ -1 0 K • Full Molded • Dielectric Strength 2kV 2kV S II Main Use • Switching Regulator • y ^ 'O n - n / • Fly W heel

7S14H

Contextual Info: POWEREX INC U R m B 1SE E D T a m t a i 000345? C D 42 C D 47 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania J5697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 4 90 90 SCR/Diode POW-R-BLOK Modules

300V-20A

Contextual Info: Super Fast Recovery Diode Twin Diode m tm DF20LC30 OUTLINE U nit-m m Package : STO-220 W eight 1.5g Typ 10.2 P y h fL ig -(ffl) 300V 20A Feature • SMD • SMD •e y -rx • Low Noise • trr=30ns • trr=30ns 4.7 Main Use • Switching Regulator >DC/DC n y t K —S

marking AFW

Abstract: SMD DIODE BOOK diode T3 Marking 20NC15 DF20NC15 smd marking 5G J532 smd diode marking 47
Contextual Info: Schottky Barrier Diode Twin Diode Mfm OUTLINE Package : STO-220 DF20NC15 Unit-m m Weight 1.5g Typ P y K L l°-(ffl) 10.2 15 0 V 2 0 A Feature • SM D ' SM D • <SlR=0.4mA 1Low lR=0.4mA 1Resistance for thermal run-away < IA Main Use >X ' f ' y 1Sw itching Regulator

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF20LC40M Package : FTO-220A Unit:mm Weight lJ9g Typ> 400V 20A 4.5 Feature y i/= E -Ji F • m ttm s 2 kv ( s u • Full Molded • V f =1.3V • Low V f=1 .3V • Tj=150°C • • Tj=150°C • Dielectric Strength 2kV

diode ep sod-323

Abstract: diode ep sod 323 STVD901J varicap marking v
Contextual Info: STVD901J VARICAP FEATURES AND BENEFITS n n n High capacitance ratio Tuned for 900 Mhz band in mobile phone Surface mount device A DESCRIPTION The STDV901J is a variable capacitance diode in SOD-323 package. This diode is intended to be used in mobile phone application to control the

PART marking d2

Abstract: e2 marking EMI/RFI filter schematic diagram MO-229 Pi filter udfn UDFN-8 MO-229C P09E
Contextual Info: CM1609 LCD and Camera EMI Filter Array with ESD Protection Features • • • • • • Six and eight channels of EMI filtering with integrated ESD protection Pi-style EMI filters in a capacitor-resistor-capacitor C-R-C network ±15kV ESD protection on each channel

Contextual Info: Schottky Barrier Diode Twin Diode mwm o u t lin e Package : STO-220 DF40SC3L U n ii I m m W e ig h t 30V 40A Date code ^ N Feature N . 0176 Control No. • SMD • SMD • SV f=0.45V • Low Vf=0.45V • P rrsm7’K 5 > ì ' i ® ì ì ì • PnnsM Rating

D 92 M - 02 DIODE

Abstract: JS marking diode c 92 M - 02 DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20PC3M PyhfLig- ffl Unit-mm Weight 1.5g(Typ) 10.2 30V 20A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M 4.7

Ceramic Capacitors 0.2UF 50V

Abstract: 0.2uf 50V Ceramic Capacitor DN007 Ceramic capacitor 0,2uF 50V CH10 CH11 PACDN007 ua712 Ceramic capacitor 0.2uF 50V
Contextual Info: PACDN007 18 Channel ESD Protection Array Features Product Description • • • Applications The PACDN007 is a diode array designed to provide 18 channels of ESD protection for electronic components or sub-systems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the

L6PR

Abstract: STPR620CT diode l6 STPR620CF STPR620CFP
Contextual Info: STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2x3A VRRM 200 V Tj(max) 150°C VF(max) 0.99 V trr(max) 30 ns A1 K A2 A2 FEATURES Suited for SMPS Low losses Low forward and reverse recovery time High surge current capability

Contextual Info: £ ÿ j SGS-THOM SON noœilLIOraeQïlBCi STTA1512P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V (typ) 55ns (max) 1.9V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE

Contextual Info: Supertex inc. HV2661 Low Charge Injection 24-Channel High Voltage Analog Switch Features General Description 24-channel high voltage analog switch 3.3 or 5.0V CMOS input logic level 3:1 MUX-deMUX with 8 states 20MHz data shift clock frequency HVCMOS technology for high performance

Contextual Info: Supertex inc. HV2661 Low Charge Injection 24-Channel High Voltage Analog Switch Features ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► ►► 24-channel high voltage analog switch 3.3 or 5.0V CMOS input logic level 3:1 MUX-deMUX with 8 states

1N4D02

Abstract: 0163f TS317 TS317CM TS317CP TS317CW TS317CZ U014 LADJ
Contextual Info: s TAIWAN TS317 SEMICONDUCTOR 3 -T e rm ina l A d ju sta b le P ositive V o lta g e R egulator pb RoHS COMPLIANCE TO-220 TO-263 TO-252 <D2PAK) 47 >s| m n SO T-223 (DPAK) : i 1 2 & : 12 3 Pin D e fin itio n : 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2

Contextual Info: Supertex inc. HV2761 Low Charge Injection, 24-Channel, High Voltage Analog Switch with Bleed Resistors Features General Description 24-channel high voltage analog switch Integrated bleed resistors on the outputs 3.3 or 5.0V CMOS input logic level 3:1 MUX-deMUX with 8 states

Contextual Info: Schottky Barrier Diode Twin Diode Wtm SF10SC4R 40V P ackage OUTLINE U nit-m m : F T O -2 2 0 W eight 1.9g Typ A 4.5 Feature • Tj=150°C • Tj=150°C • P r r s m Rating • Full Molded • Dielectric Strength 2kV • PRRSM T ’A ' i ^ V Î ' I ' K i E