DIODE MARKING LE ST Search Results

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG10SC4M Unit : mm Package I FTO-220G Weight 1.54g Typ> 40 V 10 A 4.5 Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm Rating • t ë ï i H Œ 2k V ( S I I • Full Molded • Dielectric Strength 2kV

SG20LC20USM

Abstract: SG20LC20U
Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SG20LC20USM 200V 20A Feature •i& y 'fx • • Low Noise trr=25ns • tnr=25ns • 7 1 1 ^ -1 0 K • Full Molded • Dielectric Strength 2kV 2kV S II Main Use • Switching Regulator • y ^ 'O n - n / • Fly W heel

300V-20A

Contextual Info: Super Fast Recovery Diode Twin Diode m tm DF20LC30 OUTLINE U nit-m m Package : STO-220 W eight 1.5g Typ 10.2 P y h fL ig -(ffl) 300V 20A Feature • SMD • SMD •e y -rx • Low Noise • trr=30ns • trr=30ns 4.7 Main Use • Switching Regulator >DC/DC n y t K —S

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF20LC40M Package : FTO-220A Unit:mm Weight lJ9g Typ> 400V 20A 4.5 Feature y i/= E -Ji F • m ttm s 2 kv ( s u • Full Molded • V f =1.3V • Low V f=1 .3V • Tj=150°C • • Tj=150°C • Dielectric Strength 2kV

Contextual Info: Schottky Barrier Diode Twin Diode mwm o u t lin e Package : STO-220 DF40SC3L U n ii I m m W e ig h t 30V 40A Date code ^ N Feature N . 0176 Control No. • SMD • SMD • SV f=0.45V • Low Vf=0.45V • P rrsm7’K 5 > ì ' i ® ì ì ì • PnnsM Rating

D 92 M - 02 DIODE

Abstract: JS marking diode c 92 M - 02 DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20PC3M PyhfLig- ffl Unit-mm Weight 1.5g(Typ) 10.2 30V 20A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M 4.7

L6PR

Abstract: STPR620CT diode l6 STPR620CF STPR620CFP
Contextual Info: STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2x3A VRRM 200 V Tj(max) 150°C VF(max) 0.99 V trr(max) 30 ns A1 K A2 A2 FEATURES Suited for SMPS Low losses Low forward and reverse recovery time High surge current capability

Contextual Info: Supertex inc. HV2661 Low Charge Injection 24-Channel High Voltage Analog Switch Features General Description 24-channel high voltage analog switch 3.3 or 5.0V CMOS input logic level 3:1 MUX-deMUX with 8 states 20MHz data shift clock frequency HVCMOS technology for high performance

1N4D02

Abstract: 0163f TS317 TS317CM TS317CP TS317CW TS317CZ U014 LADJ
Contextual Info: s TAIWAN TS317 SEMICONDUCTOR 3 -T e rm ina l A d ju sta b le P ositive V o lta g e R egulator pb RoHS COMPLIANCE TO-220 TO-263 TO-252 <D2PAK) 47 >s| m n SO T-223 (DPAK) : i 1 2 & : 12 3 Pin D e fin itio n : 1. Adjustable 2. Output 3. Input Heatsink is connected to Pin 2

Contextual Info: Supertex inc. HV2761 Low Charge Injection, 24-Channel, High Voltage Analog Switch with Bleed Resistors Features General Description 24-channel high voltage analog switch Integrated bleed resistors on the outputs 3.3 or 5.0V CMOS input logic level 3:1 MUX-deMUX with 8 states

Contextual Info: Schottky Barrier Diode Twin Diode Wtm SF10SC4R 40V P ackage OUTLINE U nit-m m : F T O -2 2 0 W eight 1.9g Typ A 4.5 Feature • Tj=150°C • Tj=150°C • P r r s m Rating • Full Molded • Dielectric Strength 2kV • PRRSM T ’A ' i ^ V Î ' I ' K i E

Contextual Info: REFERENCE DATA. K V 14 6 0 S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2. T O K O PART NUMBER 3. APPLICATIONS 4. STR UCT URE 5. PACKAGE OUTL I NE 6. PIN LAYOUT 7. PACKAGE O UTL I NE D I M E N S I O N S / SIGNATURE Drawn By MARKING 8. A B S O L U T E MAXIMUM RATINGS

connectors

Contextual Info: CONNECTORS | CONNETTORI version 110125 For electrovalves, style A, 2p+2G, female, Per elettrovalvole, stile A, 2p+2T, femmina, with cable con cavo EN175301-803 style A square connector, former DIN 43650-A , ISO 4400; built-in gasket; wide cable choice; single head or extension cable;

Contextual Info: ^77. STPS40L15CW LOW DROP OR-ing POWER SCHOTTKY DIODE MAJOR PRODUCT CHARACTERISTICS I f a v 2x20 A V rrm 15 V Tj (max) 150°C V f (max) 0.33 V FEATURES AND BENEFITS • VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK SIZE ■ REVERSE VOLTAGE SUITED TO OR-ing OF

STTA312B

Abstract: 600V Ultrafast Diode DPAK A312 STTA312B-TR
Contextual Info: STTA312B TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 1200 V trr (typ) 65 ns VF (max) 1.7 V K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION

STTA12

Abstract: STTA1212D
Contextual Info: STTA1212D TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 12A VRRM 1200V trr (typ) 50 ns VF (max) 2.0 V K FEATURES AND BENEFITS A c u d K ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

diode marking 226

Abstract: .25N33 25n33
Contextual Info: QFET FQB25N33 330V N-Channel MOSFET Features General Description • 25A, 330V, RDS on = 0.23Ω @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58nC)

marking code diode R12

Abstract: marking R12 STPR120A pr sma package pr sma marking pr sma
Contextual Info: STPR120A HIGH EFFICIENCY FAST RECOVERY DIODE Table 1: Main Product Characteristics IF AV 1A VRRM 200 V Tj (max) 150°C VF(max) 0.74 V trr (max) 35 ns SMA (JEDEC DO-214AC) STPR120A FEATURES AND BENEFITS • ■ ■ ■ Very low switching losses Low forward voltage drop

DIODE S51

Abstract: 5070d diode 513 S5 s513 5030a DIODE S5
Contextual Info: Model S-5000 Dip Rotary Code Switch W / Built In Resistors A nd/O r Diode Array 11 m m Square SP E C IF IC A T IO N S G eneral Operating Temp. Range -25°C T O + 75"C Storage Temp. Range -25°C T O +75°C Sealing Method O Ring Sealed Electrical Contact Rating

78S40

Abstract: OP AMP 748 MA 78S40 regulator UA78S40DMQB UA78S40DM
Contextual Info: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 4 6 5 7 8 9 10 11 PMIC N/A S STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE

STS3DPF60L

Abstract: S3DPF
Contextual Info: STS3DPF60L DUAL P-CHANNEL 60V - 0.10 Ω - 3A SO-8 STripFET MOSFET Table 1: General Features TYPE VDSS RDS on ID 60 V < 0.12 Ω 3A STS3DPF60L • ■ ■ Figure 1: Package TYPICAL RDS(on) = 0.10 Ω @ 10V STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT

Contextual Info: STGW40N120KD 40 A - 1200 V - short circuit rugged IGBT Preliminary Data Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 2 3 1 Application

AN-994

Abstract: IRLR024N IRLU024N IRLZ24N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1363A IRLR/U024N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V

Contextual Info: IRFR/U9120N D -P ak T O -2 52 A A l l l l l l l I-P ak T O -25 1 A A Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description D VDSS = -100V The D-Pak is designed for surface mounting using vapor