DIODE MARKING ED Search Results

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

mark a7 sot23 DIODE

Abstract: LBAV99LT1G LBAV99LT3G mark a7 sot23
Contextual Info: LESHAN RADIO COMPANY, LTD. LBAV99LT1G Dual Series Switching Diode 3 • We declare that the material of product compliance with RoHS requirements. 1 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7

Contextual Info: SC802-09 1 .OA SCHOTTKY BARRIER DIODE I Features • Surface mount device • Outline Drawing ■ Marking • Lo w V f • Super high speed switching - CATHODE MARKING - SYM BOL • High reliability by planer design ■ ,-V L I ED I 14 ■- MONTH

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7 10000 Tape & Reel 1 2 2 CATHODE 1 ANODE 3 CAHODE/ANODE

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating

Contextual Info: EDA Schottky Diode ESD Suppressor Package SOT – 23 Schematic: 3 2 1 Marking “ EDA “ o Characteristics: ( Ta = 25 C ) Symbol VBD IL CT VESD VPV Characteristic Diode Brakdown Voltage Leakage current Capacitance Channel clamp voltage Peak ESD voltage capability

Contextual Info: SC802-09 1 .OA SCHOTTKY BARRIER DIODE I • Features Outline Drawing Marking • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I -CATHODE MARKING SYMBOL A - I Applications • High speed power switching

VR BH RC

Contextual Info: SC017 1.0A (200V to 400V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking ESD-proof Surface-mount device High reliability BH Applications Type name Abridged

Contextual Info: EDB Schottky Diode ESD Suppressor Package SOT – 23-6 Schematic: 4 3 5 2 6 1 Marking “ EDB “ Characteristics: ( Ta = 25oC ) Symbol Characteristic VBD Diode Brakdown Voltage IL Leakage current CT Capacitance VESD Channel clamp voltage VPV Peak ESD voltage capability

marking code gf

Abstract: diode marking H2
Contextual Info: SC211 0.8A ( 200V to 400V / 0.8A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GF Applications

Contextual Info: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BGX50A " ! , ! , " , ,   Type BGX50A Package SOT143 Configuration bridge Marking

Diode BGX50A

Abstract: sot143 marking code u1s BFP181 Marking code U1s BGX50A
Contextual Info: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BGX50A " ! , ! , " , ,   Type BGX50A Package SOT143 Configuration bridge Marking

Contextual Info: SC016-8 1.0A (800V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 1 2 3±0.2 2 1 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking Surface-mount device High reliability BE Applications General purpose rectifier applications

diode 0.2 V 1A

Abstract: sc802
Contextual Info: SC802-09 1A (90V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design

Contextual Info: SC802-09 1A (90V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EXPITAXIAL PLANAR SWITCHING DIODE BAS16WS SOD-323 PLASTIC PACKAGE Marking BAS16WS = A6 with cathode band Fast Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N914WS SOD-323 PLASTIC PCAKAGE Marking 1N914WS=WQ with cathode band Small Signal Diode ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EXPITAXIAL PLANAR SWITCHING DIODE BAS16W SOT-323 PLASTIC PACKAGE 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 1 2 Marking BAS16W = A6 High Switching Diode

diode 1500V

Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications