DIODE MARKING ED Search Results

HSL2-1808

Abstract: BAY6642
Contextual Info: BAY6642 HiRel Silicon Switching Diode Target datasheet • For high-speed switching applications  Covers 1N6639 – 1N6643 Type Marking BAY6642 - Pin Configuration 1 Anode 2 Cathode Package HSL2-1808 Maximum Ratings at TA=25°C; unless otherwise specified

2SJ186

Abstract: Hitachi 2SJ DSA003638
Contextual Info: 2SJ186 Silicon P-Channel MOS FET ADE-208-1184 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ361

Abstract: Hitachi 2SJ DSA003640
Contextual Info: 2SJ361 Silicon P-Channel MOS FET ADE-208-143 Z 1st. Edition Aug. 1993 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK

2SJ278

Abstract: Hitachi 2SJ DSA003638
Contextual Info: 2SJ278 Silicon P-Channel MOS FET ADE-208-1190 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

2SJ450

Abstract: Hitachi 2SJ DSA003641
Contextual Info: 2SJ450 Silicon P-Channel MOS FET ADE-208-381 Z 1st. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 3 2 1 4 D 1. Gate 2. Drain

STPS6045CW

Abstract: 6045CW
Contextual Info: STPS60xxCP/CPI STPS6045CW  POWER SCHOTTKY RECTIFIERS FEATURES AND BENEFITS A1 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREME FAST SWITCHING HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2500VRMS

Contextual Info: BIC701M Bias Controlled Monolithic IC VHF/UHF RF Amplifier HITACHI ADE-208-703C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gatel.); To reduce using parts cost & PC board space. • High gain;

schematic diagram of ip camera

Abstract: CSP marking code CM1230-02 CM1230-08CP CM1230-J2CP CM1230-02CP cm1-23024
Contextual Info: CM1230 2, 4, and 8-Channel Low-Capacitance ESD Protection Array Product Description The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in a CSP form factor. It is ideal for protecting systems with high data and clock rates or for circuits that

Contextual Info: TESDQ5V0 Bi-directional ESD Protection Diode Small Signal Diode DFN1006 0402 Features —Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —100W Peak Pulse Power per Line (tp=8/20 s) —Protects one birectional I/O line

STVD901J

Abstract: Varicap
Contextual Info: STVD901J VARICAP FEATURES AND BENEFITS n n n High capacitance ratio Tuned for 900 Mhz band in mobile phone Surface mount device A DESCRIPTION The STDV901J is a variable capacitance diode in SOD-323 package. This diode is intended to be used in mobile phone application to control the

IRGB10B60KD

Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

USB002

Contextual Info: 05244 USB002 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The USB002 is an ultra low capacitance 0.6pF steering diode array. This device provides circuit protection for interfaces and wireless bus applications and portable electronics. The USB002 is ideally suited to protect USB data

STTA106

Abstract: STTA106U mosfet morocco diodes STmicroelectronics marking T01 TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE F126 smb marking stmicroelectronics STTA106RL
Contextual Info: STTA106/U TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN

FET marking code 365

Abstract: 2SJ244 Hitachi 2SJ DSA003638
Contextual Info: 2SJ244 Silicon P-Channel MOS FET ADE-208-1187 Z 1st. Edition Mar. 2001 Application High speed power switching Low voltage operation Features • Very Low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

marking 31A

Abstract: AN-994 IRFZ44Z IRFZ44ZL IRFZ44ZS
Contextual Info: PD - 94797 IRFZ44Z IRFZ44ZS IRFZ44ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

AN-994

Abstract: IRF3205L IRF3205S IRF530S
Contextual Info: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

irfb31n20d

Abstract: AN1001 IRFS31N20D IRFSL31N20D
Contextual Info: PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS 200V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

DFN-10S1

Abstract: PLR0524P device marking T7
Contextual Info: 05381 PLR0524P Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The PLR0524P is an ultra low capacitance steering diode/TVS array. This device is designed to protect computing applications such as gigabit Ethernet, HDMI, USB and DVI interfaces as well as telecommunication equipment and systems.

BB301C

Abstract: DSA003642
Contextual Info: BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD;

HALL Sensor TO92UA

Abstract: 525k hall sensor 525k
Contextual Info: MICRONAS Edition Aug. 30, 2000 6251-465-3DS HAL525, HAL535 Hall Effect Sensor IC MICRONAS HAL525, HAL535 Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

SMD Hall sensors code C

Abstract: 525E 4 Pin SMD Hall sensors 4 lead SMD Hall sensors SMD Hall C smd hall sensor SMD Hall sensors SMD Hall sensors code TRANSISTOR SMD MARKING CODE 42 HAL525
Contextual Info: MICRONAS Edition Aug. 30, 2000 6251-465-3DS HAL525, HAL535 Hall Effect Sensor IC MICRONAS HAL525, HAL535 Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

Hitachi DSA00174

Contextual Info: BIC703C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-985C Z 4th. Edition Dec. 2000 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)

D1713

Abstract: 2SK3749
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 ± 0.1 1.25 ± 0.1 it can be driven by a voltage as low as 2.5 V and it is not

AN-994

Abstract: IRFZ34N IRFZ34NL IRFZ34NS IRFZ34N MOSFET
Contextual Info: PD - 9.1311A IRFZ34NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.040Ω G ID = 29A