DIODE MARKING ED Search Results

HSL2-1808

Abstract: BAY6642
Contextual Info: BAY6642 HiRel Silicon Switching Diode Target datasheet • For high-speed switching applications  Covers 1N6639 – 1N6643 Type Marking BAY6642 - Pin Configuration 1 Anode 2 Cathode Package HSL2-1808 Maximum Ratings at TA=25°C; unless otherwise specified

2SJ186

Abstract: Hitachi 2SJ DSA003638
Contextual Info: 2SJ186 Silicon P-Channel MOS FET ADE-208-1184 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive

2SJ361

Abstract: Hitachi 2SJ DSA003640
Contextual Info: 2SJ361 Silicon P-Channel MOS FET ADE-208-143 Z 1st. Edition Aug. 1993 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK

2SJ278

Abstract: Hitachi 2SJ DSA003638
Contextual Info: 2SJ278 Silicon P-Channel MOS FET ADE-208-1190 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

2SJ450

Abstract: Hitachi 2SJ DSA003641
Contextual Info: 2SJ450 Silicon P-Channel MOS FET ADE-208-381 Z 1st. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance. Low drive power High speed switching 2.5 V gate drive device. Outline UPAK 3 2 1 4 D 1. Gate 2. Drain

STPS6045CW

Abstract: 6045CW
Contextual Info: STPS60xxCP/CPI STPS6045CW  POWER SCHOTTKY RECTIFIERS FEATURES AND BENEFITS A1 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREME FAST SWITCHING HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2500VRMS

Contextual Info: BIC701M Bias Controlled Monolithic IC VHF/UHF RF Amplifier HITACHI ADE-208-703C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gatel.); To reduce using parts cost & PC board space. • High gain;

schematic diagram of ip camera

Abstract: CSP marking code CM1230-02 CM1230-08CP CM1230-J2CP CM1230-02CP cm1-23024
Contextual Info: CM1230 2, 4, and 8-Channel Low-Capacitance ESD Protection Array Product Description The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in a CSP form factor. It is ideal for protecting systems with high data and clock rates or for circuits that

Contextual Info: TESDQ5V0 Bi-directional ESD Protection Diode Small Signal Diode DFN1006 0402 Features —Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —100W Peak Pulse Power per Line (tp=8/20 s) —Protects one birectional I/O line

STVD901J

Abstract: Varicap
Contextual Info: STVD901J VARICAP FEATURES AND BENEFITS n n n High capacitance ratio Tuned for 900 Mhz band in mobile phone Surface mount device A DESCRIPTION The STDV901J is a variable capacitance diode in SOD-323 package. This diode is intended to be used in mobile phone application to control the

IRGB10B60KD

Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

USB002

Contextual Info: 05244 USB002 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The USB002 is an ultra low capacitance 0.6pF steering diode array. This device provides circuit protection for interfaces and wireless bus applications and portable electronics. The USB002 is ideally suited to protect USB data

STTA106

Abstract: STTA106U mosfet morocco diodes STmicroelectronics marking T01 TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE F126 smb marking stmicroelectronics STTA106RL
Contextual Info: STTA106/U TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN

A2 zener diode

Contextual Info: Zener Diode EDZ7.5B Dimensions Unit : mm Applications Constant voltage control 0.8±0.05 Land size figure (Unit : mm) 0.12±0.05 0.6 0.8 Construction Silicon epitaxial planer 1.6±0.1 1.2±0.05 1.7 Features 1)2-pin ultra mini-mold type for high-density

AN-994

Contextual Info: PD - 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

IRF9Z14L

Abstract: IRF9Z14S marking 67A
Contextual Info: PD - 9.911A IRF9Z14S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z14S l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω

marking 31A

Abstract: AN-994 IRFZ44Z IRFZ44ZL IRFZ44ZS
Contextual Info: PD - 94797 IRFZ44Z IRFZ44ZS IRFZ44ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET

IRF540Z

Abstract: IRF540ZL IRF540ZS
Contextual Info: PD - 95531 IRF540ZPbF IRF540ZSPbF IRF540ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D

AN-994

Abstract: IRF3205L IRF3205S IRF530S
Contextual Info: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

irfb31n20d

Abstract: AN1001 IRFS31N20D IRFSL31N20D
Contextual Info: PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS 200V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

DFN-10S1

Abstract: PLR0524P device marking T7
Contextual Info: 05381 PLR0524P Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The PLR0524P is an ultra low capacitance steering diode/TVS array. This device is designed to protect computing applications such as gigabit Ethernet, HDMI, USB and DVI interfaces as well as telecommunication equipment and systems.

AN-994

Abstract: IRF820A IRF820AL IRF820AS
Contextual Info: PD - 95533 IRF820ASPbF IRF820ALPbF SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

AN-994

Abstract: IRFBF20 IRFBF20L IRFBF20S
Contextual Info: PD - 9.1665 IRFBF20S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBF20S Low-profile through-hole (IRFBF20L) Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D

BB301C

Abstract: DSA003642
Contextual Info: BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD;