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    DIODE MARKING CODE YF Search Results

    DIODE MARKING CODE YF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    		Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    		Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    2910/BQA
    		Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    		Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy

    DIODE MARKING CODE YF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ERC01

    Abstract: SV 04f
    Contextual Info: ERC01 F (i •8 A ) _ * ± ' i ' m i 3? 4 * - v : Outline Drawings GENERAL USE RECTIFIER DIODE Features • High cu rre n t • S fffitt mtkTFi : Marking High reliability ■ f f liil : Applications A7 -3 - K: È C olor code : W hite • « S 3 fc


    OCR Scan     		erc01sv 04f PDF

    K3050

    Abstract: TPCF8B01
    Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		tpcf8b01k3050 PDF

    Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		tpcf8b01 PDF

    TPCF8B01

    Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		tpcf8b01 PDF

    TPCF8B01

    Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		tpcf8b01 PDF

    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		tpcf8303 PDF

    cha marking code

    Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		tpc8303cha marking code PDF

    Contextual Info: TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPC8012-H Switching Regulator Application DC-DC Converter Application Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.35 S (typ.)


    Original     		tpc8012-h PDF

    TPCF8A01

    Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		tpcf8a01 PDF

    TPCF8A01

    Abstract: toshiba Silicon Rectifier Diodes
    Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		tpcf8a01toshiba silicon rectifier diodes PDF

    MCV MOSFET

    Abstract: TPCF8A01
    Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		tpcf8a01mcv mosfet PDF

    Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		tpcf8b01 PDF

    Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		tpc8303 PDF

    Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		tpc8303 PDF

    toshiba f5b

    Abstract: TPCF8303
    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		tpcf8303toshiba f5b PDF

    Contextual Info: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.)


    Original     		tpcf8103 PDF

    Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		tpcf8303 PDF

    Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		tpc8303 PDF

    TPC8012-H

    Contextual Info: TPC8012-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV TPC8012-H Switching Regulator Applications DC／DC Converter Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.35 S (typ.)


    Original     		tpc8012-h PDF

    TPC6105

    Contextual Info: TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6105 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		tpc6105 PDF

    TPCF8104

    Abstract: transistor SMD DK
    Contextual Info: TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.)


    Original     		tpcf8104transistor smd dk PDF

    TPCF8001

    Contextual Info: TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8001 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8 S (typ.)


    Original     		tpcf8001 PDF

    TPCF8101

    Contextual Info: TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8101 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)


    Original     		tpcf8101 PDF

    TPCF8102

    Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)


    Original     		tpcf8102 PDF