DIODE MARKING CODE YF Search Results

ERC01

Abstract: SV 04f
Contextual Info: ERC01 F (i •8 A ) _ * ± ' i ' m i 3? 4 * - v : Outline Drawings GENERAL USE RECTIFIER DIODE Features • High cu rre n t • S fffitt mtkTFi : Marking High reliability ■ f f liil : Applications A7 -3 - K: È C olor code : W hite • « S 3 fc

TPCF8B01

Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

MCV MOSFET

Abstract: TPCF8A01
Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)

Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : |Yfs| = 7 S (typ.)

TPC8012-H

Contextual Info: TPC8012-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV TPC8012-H Switching Regulator Applications DC／DC Converter Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.35 S (typ.)

TPC6102

Contextual Info: TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII TPC6102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)

TPC6101

Contextual Info: TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII TPC6101 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8.2 S (typ.)

Contextual Info: TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.)

Contextual Info: TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII TPC6102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6 S (typ.)

Contextual Info: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)

TPC6002

Contextual Info: TPC6002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII TPC6002 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 25 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)

TPC6003

Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)

k2699

Abstract: Toshiba K2699 2SK2699 2sk2699 transistor toshiba marking code transistor SC-65
Contextual Info: 2SK2699 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2699 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance : |Yfs| = 11 S (typ.)

TPCF8103

Contextual Info: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

TPC6005

Contextual Info: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)

k2995

Abstract: transistor marking MH 2SK2995
Contextual Info: 2SK2995 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2995 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 48 mΩ (typ.) High forward transfer admittance : |Yfs| = 30 S (typ.)

TPCF8301

Contextual Info: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)

TPC6003

Abstract: marking CODE 001
Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)

TPC6005

Contextual Info: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)

TPCF8102

Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)

Contextual Info: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery

Contextual Info: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C

TPCF8201

Contextual Info: TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)

TPC6103

Contextual Info: TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)